MPSA92
Abstract: MPSA MPSA 135 mpsa 92 Q68000-A4810 Q68000-A5906 MPSA93 marking code 93
Text: MPSA 92 MPSA 93 PNP Silicon High-Voltage Transistors ● ● ● High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 42 MPSA 43 NPN 1 32 Type MPSA 92 MPSA 93 Marking MPSA 92 MPSA 93 Ordering Code Pin Configuration Q68000-A5906
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Q68000-A5906
Q68000-A4810
MPSA92
MPSA
MPSA 135
mpsa 92
Q68000-A4810
Q68000-A5906
MPSA93
marking code 93
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mpsa42
Abstract: MPSA 135 mpsa43 mpsa mpsa 42 Q68000-A4809 Q68000-A413
Text: MPSA 42 MPSA 43 NPN Silicon High-Voltage Transistors ● ● ● High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 PNP 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configuration Q68000-A413
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Q68000-A413
Q68000-A4809
Storag70
mpsa42
MPSA 135
mpsa43
mpsa
mpsa 42
Q68000-A4809
Q68000-A413
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AISHI Capacitor
Abstract: CD11G
Text: 湖南艾华集团股份有限公司 HUNAN AIHUA GROUP CO., LTD Tel: 0737 6184466 Fax : (0737)6180493 Http://www.aihuaglobal.com Customer:四川虹锐 Date:April 11, 2013 SPECIFICATION Description: Aluminum Electrolytic Capacitors AISHI P/N: EGW2WM3R3F12OT
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EGW2WM3R3F12OT
CD11GAS
450V3
CRS-Z-1304070
Sheet-CD11GAS
CRS-2010-GW/
AISHI Capacitor
CD11G
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Untitled
Abstract: No abstract text available
Text: AME, Inc. AME8803 / 8814 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8803
300mA
AME8803/8814
OT-26
Vrefx110%
2006/2095-DS8803/8814-I
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Untitled
Abstract: No abstract text available
Text: AME, Inc. AME8803 / 8814 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8803
300mA
AME8803/8814
OT-26
Vrefx110%
2006-DS8803/8814-H
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AME8803
Abstract: Linear Regulator sot-26 SOT26 TSOT-26 AME8803AEEY AME8803BEEY AME8814 8814 TRANSISTOR 8814
Text: AME 300mA CMOS LDO AME8803 / 8814 n General Description n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 package is attractive for "Pocket"
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300mA
AME8803
AME8803/8814
OT-26
0374REF
37REF
2006/2095-DS8803/8814-I
Linear Regulator
sot-26
SOT26
TSOT-26
AME8803AEEY
AME8803BEEY
AME8814
8814
TRANSISTOR 8814
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Untitled
Abstract: No abstract text available
Text: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008
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TPS62000,
TPS62001,
TPS62003
TPS62004,
TPS62005,
TPS62006
TPS62007,
TPS62008
SLVS294E
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Untitled
Abstract: No abstract text available
Text: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008
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TPS62000,
TPS62001,
TPS62003
TPS62004,
TPS62005,
TPS62006
TPS62007,
TPS62008
SLVS294E
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Untitled
Abstract: No abstract text available
Text: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008
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TPS62000,
TPS62001,
TPS62003
TPS62004,
TPS62005,
TPS62006
TPS62007,
TPS62008
SLVS294E
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8814
Abstract: TRANSISTOR 8814 AME8803 AME8803AEEY AME8803BEEY AME8803CEEY AME8803DEEY AME8803EEEY AME8803FEEY AME8803GEEY
Text: Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO n General Description n Features The AME8803 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The
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AME8803/8814
300mA
AME8803
OT-23-6
1000pF
2006-DS8803/8814-E
8814
TRANSISTOR 8814
AME8803AEEY
AME8803BEEY
AME8803CEEY
AME8803DEEY
AME8803EEEY
AME8803FEEY
AME8803GEEY
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TRANSISTOR 8814
Abstract: 8814 AME8803DEEY AATW E1B12 AME8803 AME8803AEEY AME8803BEEY AME8803CEEY AME8803EEEY
Text: AME, Inc. 300mA CMOS LDO AME8803 / 8814 n General Description n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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Original
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300mA
AME8803
AME8803/8814
OT-23-6
1000pF
2006-DS8803/8814-G
TRANSISTOR 8814
8814
AME8803DEEY
AATW
E1B12
AME8803AEEY
AME8803BEEY
AME8803CEEY
AME8803EEEY
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g554
Abstract: 93 MARKING CODE
Text: REV. S tatus REVISION 0 5 /0 4 /9 3 TS REVISION A CLARIFIED MARKING 0 6 /2 9 /0 5 YS A. Electrical specification @ 2 5 °C 1. Power rating; 500 mW 2. Dielectric strength; 500 VDC 1 minute 3. Insulation resistance; 10.000 MQ MIN @ 500 VDC 4. Turns ratio;
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SER\A1106421
g554
93 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 0 8 / 1 4 / 9 2 TS REVISION A FLIPPED RADII & CLARIFIED MARKING 0 6 / 2 9 / 0 5 YS A. Electrical specification @ 2 5 °C cr Ld m 1. 500 mW 2. 500 VDC 1 minute 3. 10,000 MQ MIN 500 VDC CO in in 4. (1 - 5 ) : (6 - 2 ) = 1 : 2 CT ±5%
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SER\A1106461
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rsmf3b
Abstract: 100K0 E611 rsf-11 rs-ff RSMF12B RSF2B RSF1B
Text: D im c - n s iu n s m B Type d □ c r _ i_ t D ; R S F ^ - f y / 7 j b - ? \ s - ,RSMFZ ' C J l ' f ' J - y ü tiz 7—1]— K ÄF : Coating Color : RSF type/B luegray ,RSMF type/G reen Marking : Color code \f L R S F 12B 9±1 3 ± 0 .5 0 .7 28±2 RSF1B 1 1 ±1
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RSF12B
RSMF12B
RSF12BL
000hr
MIL-STD-202-21
rsmf3b
100K0
E611
rsf-11
rs-ff
RSF2B
RSF1B
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F6 DD52
Abstract: dd52 ll87 mini circuits mcl-1 LA 4288
Text: cuse s y es outline dim sni ions m m c D H J K 1 grams. NOTES* A 01 .770 19.56 .800 20.32 .385 9.78 .400 0.16 Ç 10 .400 10 16 .200 5.08 .20 5.08 .14 3.56 .031 .79 5.2 A1,B3,E1,B7 .480 12.19 .500 12.70 .390 9.91 .405 0.29 .5 0 5 '3 .230 5.84 .100 2.54
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gaas fet micro-X Package marking
Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and
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transistor marking L ghz
Abstract: mmic marking L
Text: Infineon ►a c h r t o l u g i a » 24 - 28 GHz GaAs Doubler MMIC 24 - 28 GHz Doubler Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Frequency Doubler (coplanar design) Input/Output matched to SO i2 Input frequency range: 12 GHz to 14 GHz
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im/70
transistor marking L ghz
mmic marking L
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HEMT Amplifier
Abstract: LNA marking G
Text: In fineon !*íh«t!eg¡íis 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • Two-Stage Monolithic Microwave integrated Circuit MMIC HEMT Amplifier (coplanar design) • Input/Output matched to 50 • Frequency range: 24 GHz to 32 GHz
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G-556
Abstract: transformer specification OF
Text: REV. S tatus R E V IS IO N 0 6 /2 9 /0 5 PREPARED YS A. Electrical s p e cifica tio n @ 2 5 °C 1. Power rating; 5 0 0 mW 2. D ielectric stre ng th; 5 0 0 VDC 1 m inute 3. Insulation resistance; 10.000 MQ MIN @ 500 VDC 4. Turns ratio; ( 1 - 2 ) : ( 3 - 4 ) : ( 5 - 6 ) = 1 : 1 : 1 ±5%
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Designati0644
SER\A1106441
G-556
transformer specification OF
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G550
Abstract: COUNTRY OF ORIGIN P-A1-10638
Text: REV. S ta tu s R E V IS IO N 0 5 /0 3 /9 3 TS R E V IS IO N A C L A R IF IE D M A R K IN G 0 6 /2 7 /0 5 PREPARED YS A. Electrical s p e cifica tio n @ 2 5 °C 1. Power rating; 5 0 0 mW 2. D ielectric stre ng th; 5 0 0 VDC 1 m inute 3. Insulation resistance;
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SER\A1106381
G550
COUNTRY OF ORIGIN
P-A1-10638
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BBREF0425
Abstract: No abstract text available
Text: 5 1993 B U R R -B R O W N REF1004 ♦ Micropower VOLTAGE REFERENCE DESCRIPTION FEATURES The REF1004 Micropower Voltage References are two terminal bandgap reference diodes designed to provide high accuracy and excellent temperature characteristics at very low operating currents. Optimization of the key
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REF1004
REF1004
LT1004
LM185
100pF
BBREF0425
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PDF
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BFT92
Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Text: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,
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BFT92
BFR92
BFR92A.
Colle131
Z62771
BFT92
BFR92A
727 Transistor power values
BFT92V
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PDF
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T 1S98
Abstract: 38510/159 FCT ckt HPF 505 1N3064
Text: MIL-M-38510/1593 1QUÀLÏrICATI ON 21 JULY 1986 I REQUIREMENTS I REMOVED SUPERSEDING MIL-M-38510/159A 11 June 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, SHIFT REGISTERS, MONOLITHIC SILICON 1NACIIVli FOR HEWDLSISH AFTER' BATE dF THIS REvtSl6N.~|
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MIL-M-38510/1593
MIL-M-38510/159A
MIL-M-38510,
T 1S98
38510/159
FCT ckt
HPF 505
1N3064
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PDF
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TIC 136 Transistor
Abstract: mrf412
Text: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier
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007flT71
MRF412
TIC 136 Transistor
mrf412
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