Untitled
Abstract: No abstract text available
Text: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6mm 1 2 2 SOD-923F Marking: AB Absolute Maximum Ratings * Symbol
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BAS16SL
OD-923F
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FAIRCHILD SMD MARKING
Abstract: BAS16SL FAIRCHILD DIODE
Text: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6mm 1 2 2 SOD-923F Marking: AB Absolute Maximum Ratings * Symbol
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BAS16SL
OD-923F
FAIRCHILD SMD MARKING
BAS16SL
FAIRCHILD DIODE
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BAS16SL
Abstract: smd marking QT
Text: BAS16SL Small Signal Diodes Features • Low Forward Voltage Drop • Fast switching • Very Small and Thin SMD package • Profile height, 0.43mm max • Footprint, 1.0 x 0.6 mm Connection Diagram 1 2 2 SOD-923 Marking: AB Absolute Maximum Ratings * Symbol
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BAS16SL
OD-923
BAS16SL
smd marking QT
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FAIRCHILD SMD MARKING
Abstract: BAS16SL MARKING AB FAIRCHILD
Text: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6 mm 1 2 2 SOD-923 Marking: AB Absolute Maximum Ratings * Symbol
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BAS16SL
OD-923
FAIRCHILD SMD MARKING
BAS16SL
MARKING AB FAIRCHILD
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PART NUMBER MARKING SC70-6
Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching
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FFB3946
SC70-6
2N3904
2N3906
PART NUMBER MARKING SC70-6
pin configuration NPN transistor 2N3904
MARKING CODE 21 SC70
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Untitled
Abstract: No abstract text available
Text: FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, PΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD9N25
FQU9N25
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FGH40T100
Abstract: FGH40T100SMD_F155
Text: FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT Features General Description • High Current Capability Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and
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FGH40T100SMD
FGH40T100
FGH40T100SMD_F155
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and Rds on .
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FDZ201N
FDZ201N
300ps,
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Y1416
Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information
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AND8004/D
14xxx
Y1416
vk sot-363
LCX00
AND8004
MC74HC04ADR2
ASE CHUNGLI
date code marking
"marking Code" V2
MX marking code sot23
marking a6 sot363
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marking codes fairchild
Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
14xxx
r14525
AND8004/D
marking codes fairchild
SOT-363 a7
wz 74 marking
SOT-363 MARKING WF
marking 324 tssop 16
vk sot-363
On Semiconductor Logic Data Code and Traceability
marking code cp
SOT-363 A1 marking codes
ON TSOP6 MARKING 6L
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marking codes fairchild
Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
r14525
marking codes fairchild
HEP08
fairchild marking codes sot-23
TOREX TOP CODE
AND8004
t324
SOT-353 A7
marking L5 sot363
xaa643
and8004 D
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FGD4536
Abstract: No abstract text available
Text: FGD4536 360 V PDP Trench IGBT Features General Description • • • • • Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and
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FGD4536
O-252/D-PAK
FGD4536
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FDC6305N
Abstract: No abstract text available
Text: =Ml C O N D U C TO R tm FDC6305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e s e N -C h a n n e l lo w th re s h o ld 2 .5 V s p e c ifie d MOSFETs are produced using Fairchild Semiconductor's a d v a n c e d P o w e rT re n c h p ro c e s s th a t h a s b e e n
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FDC6305N
FDC6305N,
FDC6305N
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Untitled
Abstract: No abstract text available
Text: FGP20N60UFD 600 V, 20 A Field Stop IGBT Features General Description • • • • • Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
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FGP20N60UFD
O-220
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Untitled
Abstract: No abstract text available
Text: FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD4N25
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Untitled
Abstract: No abstract text available
Text: FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP2N40
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Untitled
Abstract: No abstract text available
Text: FQP46N15 N-Channel QFET MOSFET 150 V, 45.6 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP46N15
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Untitled
Abstract: No abstract text available
Text: FQP2N90 N-Channel QFET MOSFET 900 V, 2.2 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP2N90
O-220
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Untitled
Abstract: No abstract text available
Text: FQD6N25 N-Channel QFET MOSFET 250 V, 4.4 A, 1.0 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD6N25
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Untitled
Abstract: No abstract text available
Text: FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD7N30
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Untitled
Abstract: No abstract text available
Text: FQP12P20 P-Channel QFET MOSFET -200 V, -11.5 A, 470 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP12P20
FQP12P20
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Untitled
Abstract: No abstract text available
Text: FQD4N20 N-Channel QFET MOSFET 200 V, 3.0 A, 1.4 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD4N20
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Untitled
Abstract: No abstract text available
Text: FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD7P20
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Untitled
Abstract: No abstract text available
Text: FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD2N90
FQU2N90
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