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    MARKING 951 SOT23 Search Results

    MARKING 951 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 951 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OUTLINE DIMENSIONS in inche

    Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F OUTLINE DIMENSIONS in inche marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


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    PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


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    PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


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    PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


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    PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F D-81541

    TS16949

    Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    42GA

    Abstract: hall sensor linear sot23-4 42ga hall sensor 3 pin SMD hall sensor smd hall effect sensor "linear hall effect sensor" SENSOR HALL sot23-4 SMD Hall marking 450 SOT-23 HALL EFFECT SENSOR 3 PIN hall effect sensor smd
    Text: MLX90242 Linear Hall Effect Sensor Features and Benefits • • • • Small Plastic Package SOT-23, 4-SIP-VA, TO-92 Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Applications


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    PDF MLX90242 OT-23, MLX90242LUA-CC03 MLX90242LVA-CC03 MLX90242ESO-B MLX90242ESO-CC03 1300G) QS9000, ISO14001 Mar/04 42GA hall sensor linear sot23-4 42ga hall sensor 3 pin SMD hall sensor smd hall effect sensor "linear hall effect sensor" SENSOR HALL sot23-4 SMD Hall marking 450 SOT-23 HALL EFFECT SENSOR 3 PIN hall effect sensor smd

    transistor smd code marking 2406

    Abstract: transistor SMD 1886 KTY82 KTY82-110 marking r25 sot23 KTY82-220 SMD code 747 marking code 1881 SMD KTY82/120/DG/B2,21
    Text: KTY82 series Silicon temperature sensors Rev. 04 — 14 January 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are


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    PDF KTY82 transistor smd code marking 2406 transistor SMD 1886 KTY82-110 marking r25 sot23 KTY82-220 SMD code 747 marking code 1881 SMD KTY82/120/DG/B2,21

    BP 4087

    Abstract: marking CODE 4407 STR Z 2757 transistor smd code marking 2406 KTY82 KTY82-210 smd transistor 1589 STR 3118 TOA 2709 transistor SMD DK
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 KTY82-2 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 05 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors


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    PDF M3D088 KTY82-2 SCA52 115106/00/03/pp16 BP 4087 marking CODE 4407 STR Z 2757 transistor smd code marking 2406 KTY82 KTY82-210 smd transistor 1589 STR 3118 TOA 2709 transistor SMD DK

    IDTAS4624

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 0.5Ω LOW VOLTAGE, SINGLE SPDT ANALOG SWITCH Description Features The IDTAS4624 low on-resistance RON , low voltage, single-pole/double-throw (SPDT) analog switch operates from a single +1.8 V to +5.5 V supply. The IDTAS4624 features a 0.5Ω (max) RON for its NC switch and a 0.8Ω


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    PDF IDTAS4624 IDTAS4624

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET 0.5Ω LOW VOLTAGE, SINGLE SPDT ANALOG SWITCH Description Features The IDTAS4624 low on-resistance RON , low voltage, single-pole/double-throw (SPDT) analog switch operates from a single +1.8 V to +5.5 V supply. The IDTAS4624 features a 0.5Ω (max) RON for its NC switch and a 0.8Ω


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    PDF IDTAS4624 IDTAS4624

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 0.5Ω LOW VOLTAGE, SINGLE SPDT ANALOG SWITCH Description Features The IDTAS4624 low on-resistance RON , low voltage, single-pole/double-throw (SPDT) analog switch operates from a single +1.8 V to +5.5 V supply. The IDTAS4624 features a 0.5Ω (max) RON for its NC switch and a 0.8Ω


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    PDF IDTAS4624 IDTAS4624 15NGLE

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    TOP MARKING F2 ROHM SOT23

    Abstract: cl21b103kbnc MARKING G7 SOT23 MOSFET
    Text: PD - 94089 iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile


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    PDF iP2001 iP2001 EIA-481 EIA-541. TOP MARKING F2 ROHM SOT23 cl21b103kbnc MARKING G7 SOT23 MOSFET

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan
    PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    153 SOT23

    Abstract: No abstract text available
    Text: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi­ cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at


    OCR Scan
    PDF 350mW) BZX84 T0-236AB OT-23) BZX84-C2V4 BZX84-C2V7 BZX84-C3 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 153 SOT23

    "Marking k2" mmic

    Abstract: TLX-9-0150-CH
    Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain


    OCR Scan
    PDF 950MHz 85GHz Q68000-A8887 200MHz "Marking k2" mmic TLX-9-0150-CH

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 59 GaAs MMIC Preliminary Data • • • • • • • • • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems Biased monolithic microwave 1C (MMIC) Easily matchable to 50fl No bias coil needed Single positive supply voltage


    OCR Scan
    PDF 950MHz 85GHz Q68000-A8887 200MHz Q1531Hti CGY59 0535b05

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS P r e lim in a r y data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 5 0 fl * No bias coil needed ‘ Single positive supply voltage * Low noise figure and high gain


    OCR Scan
    PDF 950MHz 85GHz Q68000-A8887 023SbGS 200MHz

    N4 MMIC

    Abstract: ud marking marking n4 mmic CGY59 Q68000-A8887 marking code 22nh sot23 473 coilcraft d
    Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50i2 * No bias coil needed * Single positive supply voltage "Low noise figure and high gain


    OCR Scan
    PDF 950MHz 85GHz Q68000-A8887 A23SbDS 200MHz CGY59t N4 MMIC ud marking marking n4 mmic CGY59 marking code 22nh sot23 473 coilcraft d