361 Zener diode marking
Abstract: marking code zener diode wl Fr 9888 Zener diode marking 361 zener sod-323 marking code 06 BZT52C3V3S BZT52C3V6S BZT52C4V3S BZT52C4V7S BZT52C5V6S
Text: Diode, Zener Features: • • • • SOD-323 Planar Die Construction. Ultra-Small Surface Mount Package. Ideally suited for Automated Assembly Processes. Also Available in Lead Free Version. Dimensions Minimum Maximum A 2.30 2.70 B 1.60 1.80 C 1.20 1.40
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OD-323
OD-323,
J-STD-020A.
MIL-STD-202,
361 Zener diode marking
marking code zener diode wl
Fr 9888
Zener diode marking 361
zener sod-323 marking code 06
BZT52C3V3S
BZT52C3V6S
BZT52C4V3S
BZT52C4V7S
BZT52C5V6S
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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BAS70-04
Abstract: MARKING 358 sot-23
Text: 1621826 Features: • • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis-charges. SOT-23 Top View Dimensions : Inches Millimetres
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OT-23
BAS70-04
OT-23
BAS70-04
MARKING 358 sot-23
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R1019
Abstract: No abstract text available
Text: Main Catalog Pilot Devices the complete offering News in this Catalog • Joysticks • Compact Mushrooms • Compact Illuminated Pushbuttons • Additional Legend Plate Holders • 50 Ω Potentiometer • Mounting Tool for Power Tool Contents Introduction. 2
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920R8128
1SFA619821R1000
1SFA619811R1000
CA1-8053
1SFA619920R8053
CA1-8054
1SFA619920R8054
MA1-8131
1SFA611920R8131
1SFC151004C0201.
R1019
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BZT52C
Abstract: BZT52C10 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 Zener diode marking 361
Text: Diode, Zener Surface Mount Silicon Zener Diodes Absolute Maximum Ratings Description Symbol Value Unit Forward Voltage Drop at IF 10mA VF 0.9 V Power Dissipation at 25°C *PD 410 mW Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load
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135racy
BZT52C
BZT52C10
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
Zener diode marking 361
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Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Text: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM
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south bridge SIS 968
Abstract: S6 marking code onsemi Diode SI3018-F-FS marking code 7N1 Si2457 Si3018 Si2404 Si2415 Si2434 SI2434-D-GT
Text: Si2457/34/15/04 V.90, V.34, V. 32 B IS , V.22 B IS I SO MO DE M WITH G L O B A L DAA Features This data sheet applies to Si2457/34/ Integrated DAA 15/04 Revision D Over 6000 V capacitive isolation Data modem formats Parallel phone detect
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Si2457/34/15/04
Si2457/34/
42bis,
south bridge SIS 968
S6 marking code onsemi Diode
SI3018-F-FS
marking code 7N1
Si2457
Si3018
Si2404
Si2415
Si2434
SI2434-D-GT
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Chiller
Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Text: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial
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TEM00
NL220
NL220
RS232
Chiller
532 nm laser diode
Nd-yag
invisible
c 10 ph diode
diode marking 355
Tokyo Instruments
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MARKING 358 sot-23
Abstract: diode schottky sot-23 marking l44 sot-23 marking 34 diode SCHOTTKY diode marking 45 schottky diode bat54 l44 sot-23 Marking L43 BAT54 BAT54A BAT54C
Text: BAT54- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAT54 Marking: LV3 BAT54A Marking: B6
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BAT54-
OT-23
BAT54
BAT54A
BAT54C
BAT54S
OT-23,
MIIL-STD-202,
30racy
MARKING 358 sot-23
diode schottky sot-23
marking l44 sot-23
marking 34 diode SCHOTTKY
diode marking 45
schottky diode bat54 l44
sot-23 Marking L43
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schottky diode marking A7
Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Text: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7
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OT-23
BAW56
BAV99
BAV70
OT-23,
MIIL-STD-202,
BAW56:
BAV70:
BAV99:
BAW56/BAV70/BAV99
schottky diode marking A7
diode ba 241
marking A7 diode schottky
ba 662
diode ba 204
BAV70 ON
MARKING 358 sot-23
Diode bav99
case MARKING A1
diode bav70
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3525 SMPS IC Data
Abstract: r1c diode transistor D 882 p dual cell LiFePO4 charger ic ST-Ericsson marking information
Text: 2.0 A dual path switching mode battery charger PM2100 Data sheet Features • • • Two DC/DC step-down battery chargers High efficiency up to 92% Operation at 1.6 MHz with 1 µH coil One USB path with 1.5 A and one Wall adapter
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PM2100
1/1424-LZN
3525 SMPS IC Data
r1c diode
transistor D 882 p
dual cell LiFePO4 charger ic
ST-Ericsson marking information
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EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
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MPD4-11B
Abstract: MCB-01 KT70-1001
Text: Main Catalog Pilot devices, 22 mm Pilot Devices Product index in Gen fo rm eral at io n Pilot devices Modular range . 8.1 - 8.30 Low Voltage Products & Systems ABB Inc. • 888-385-1221 • www.abb-control.com
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C0201
MPD4-11B
MCB-01
KT70-1001
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A6 sot-23
Abstract: MARKING A6 sot23 BAS16 A6 farnell BAS16 marking A6 sot-23
Text: 1621825 Features: • • • • Fast switching speed. For general purpose switching applications. High conductance. Marking: A6. SOT-23 Dimensions : Inches Millimetres Page <1> 07/07/08 V1.1 1621825 Maximum Ratings and Electrical Characteristics Rating at 25°C Ambient Temperature Unless Otherwise Specified.
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OT-23
A6 sot-23
MARKING A6 sot23
BAS16 A6
farnell
BAS16
marking A6 sot-23
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S7 SOD-123
Abstract: SCHOTTKY SOD-123 76 sod-123 plc s7 300 BAT42W
Text: 1621829 Features: • • • Low forward voltage drop. Fast switching time. Surface mount package ideally suited for automatic insertion. SOD-123 Dimensions : Inches Millimetres Mechanical Data Case Terminals Polarity Marking Weight : SOD-123, plastic.
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OD-123
OD-123,
MIIL-STD-202,
BAT42W
BAT42W
S7 SOD-123
SCHOTTKY SOD-123
76 sod-123
plc s7 300
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VC 5022
Abstract: TOPSWITCH 241 farnell TOPSWITCH tvs diode sma SMAJ530 hd 7780
Text: SMAJ530-550 Features: • • • • • • Plastic package. Protects power IC controllers such as TOPSwitch . Excellent clamping capability. Glass passivated junction. High temperature soldering guaranteed: 260°C/10 seconds at terminals. Available in unidirectional only.
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SMAJ530-550
SMA/DO-214AC
DO-201AC
MIL-STD-750,
VC 5022
TOPSWITCH 241
farnell
TOPSWITCH
tvs diode sma
SMAJ530
hd 7780
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
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SMD MARKING code 613 sot23
Abstract: jvt smd smd code marking 7333 cd 5411 jvt SOT23 smd diode 44 smd code marking sot23 SMD MARKING CODE 901 smd 662 sot23 DIODE smd marking v1
Text: 1621824 Features: • • • • • • : Application Plastic SMD package. Low leakage current: typical 3pA. Switching time: typical 0.8µs. Continuous reverse voltage: maximum 75V. Repetitive peak reverse voltage: maximum 85V. Repetitive peak forward current: maximum 500mA.
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500mA.
MAM106
SMD MARKING code 613 sot23
jvt smd
smd code marking 7333
cd 5411
jvt SOT23
smd diode 44
smd code marking sot23
SMD MARKING CODE 901
smd 662 sot23
DIODE smd marking v1
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
E78996
12-Mar-07
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AC-DC Converters
Abstract: MELCHER THE POWER PARTNERS melcher DC-DC Converters melcher m series
Text: AC-DC Converters >100 Watt 190/230 Watt AC-DC Front End with PFC PC Series PC Series Universal AC-input range Single outputs for 70 and 85 V DC loads No electrical isolation input to output • Step-down converter with single stage AC to DC conversion and PFC
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GB15RF60K
Abstract: No abstract text available
Text: GB15RF60K Vishay High Power Products IGBT PIM Module, 17 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft
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GB15RF60K
18-Jul-08
GB15RF60K
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Untitled
Abstract: No abstract text available
Text: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code
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OT-363
SC-70
S-01886--
28-Aug-00
1901DL
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153 SOT23
Abstract: No abstract text available
Text: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at
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350mW)
BZX84
T0-236AB
OT-23)
BZX84-C2V4
BZX84-C2V7
BZX84-C3
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
153 SOT23
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