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    MARKING 6A SOT 23 Search Results

    MARKING 6A SOT 23 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 6A SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6A marking sot23

    Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
    Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC817 OT-23 6A marking sot23 BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING

    BC817 cdil

    Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 cdil BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16

    BC817

    Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25

    marking 6c sot23

    Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
    Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage


    Original     		PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 marking 6c sot23 BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23

    BC817

    Abstract: 6B sot-23 MARKING 6C SOT23 BC817-40LT1 6c sot-23 BC817-40LT3G 6B SOT23 Bc817 sot-23 SOT-23 6C marking 6A SOT 23
    Text: BC817−16LT1, BC817−25LT1, BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage


    Original     		PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 BC817-16LT1/D BC817 6B sot-23 MARKING 6C SOT23 BC817-40LT1 6c sot-23 BC817-40LT3G 6B SOT23 Bc817 sot-23 SOT-23 6C marking 6A SOT 23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape 10000/Tape 300us, OT-23

    MOSFET N-Channel 1a vgs 1.2v sot-23

    Abstract: LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape& LN2502LT3G 10000/Tape& 300us, OT-23 MOSFET N-Channel 1a vgs 1.2v sot-23 LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502

    transistor 6A mun2111

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D transistor 6A mun2111

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G S-LN2502LT1G 236AB) AEC-Q101 LN2502LT3G S-LN2502LT3G 3000/Tape& 10000/Tape&

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with


    Original     		PDF LDTA114EET1 SC-89 LDTA114EET1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16LT1 TRANSISTOR（ NPN ） SOT—23 1. BASE BC817-25LT1 2. EMITTER 3. COLLECTOR １．０ BC817-40LT1 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter ０．９５


    Original     		PDF OT-23 BC817-16LT1 BC817-25LT1 BC817-40LT1 100MHz 037TPY 950TPY 550REF 022REF

    AV02-1377EN

    Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 AV02-1377EN HSMS-285C S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j

    sot-23 MARKING CODE nm

    Abstract: PJSOT36C
    Text: PJSOT03~PJSOT36C SERIES STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 to 36 Volts POWER 500 Watts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) .103(2.60) • Available in Multiple Voltage Types Ranging from 3V to 36V • Unidirectional & Bidirectional Configurations


    Original     		PDF PJSOT03 PJSOT36C OT-23 MIL-STD-750 sot-23 MARKING CODE nm

    S11 SCHOTTKY diode

    Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 S11 SCHOTTKY diode zero bias diode AV02-1377EN 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List

    SOt323 marking code 6X

    Abstract: 6n sot-323 marking 6H SC-70
    Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5111T1 SC-70/SOT-323 SOt323 marking code 6X 6n sot-323 marking 6H SC-70

    transistor 1f sot-23

    Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
    Text: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­


    OCR Scan     		PDF BCX70J BC81740 BC850B BC817B BCW72 BCX704 BC817-25 BCX70G BC847A BC817-16 transistor 1f sot-23 sot23 AJ motorola sot 23 marking transistor marking code SOT-23 marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout

    MMBR2857

    Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)


    OCR Scan     		PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


    OCR Scan     		PDF 0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645

    H7545

    Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
    Text: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60


    OCR Scan     		PDF BCX20 BSS64 SOA05 SQA06 H7545 TR BC 817-25 BCV72 BCW31 BCW32 70G45 B 250 C 100 K4