Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING 619 SOT23 Search Results

    MARKING 619 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING 619 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 marking 619

    Abstract: marking 619 npn sot23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 SOT23 marking 619 marking 619 npn sot23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236

    FMMT619TA

    Abstract: FMMT619TC FMMT619 FMMT720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 FMMT619TA FMMT619TC FMMT619 FMMT720

    FMMT619

    Abstract: fmmt720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation


    Original     		PDF FMMT619 625mW 200mV FMMT720 AEC-Q101 DS33236 FMMT619

    all diodes ratings

    Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance


    Original     		PDF FMMT619 625mW OT-23 J-STD-020 DS33236 all diodes ratings FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23

    BSS81C

    Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82

    BSS79

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    MARKING s1P

    Abstract: 99V0
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0

    Untitled

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF FMMT619 OT-23 625mw 200mA 100MHz

    smd transistor MARKING 2A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT619 OT-23 625mw 200mA 100MHz smd transistor MARKING 2A

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201 DGK-8 www.ti.com . SLOS416C – JUNE 2003 – REVISED JUNE 2009 1.8-GHz, LOW DISTORTION, CURRENT-FEEDBACK AMPLIFIER


    Original     		PDF THS3201 SLOS416C

    SOT23 marking 619

    Abstract: SN74AHCT MARKING 313 sc70 359 SOT23 Buffer gate 6 pin sot23 SOT23 MARKING SB AHC* marking marking 619 sot23 abstract Buffer gate sot23
    Text: LL Non-Inverting Buffer and Driver - LL Buffer Gate with 3-State Output - SN74AHCT. TI Home > Semiconductors > Logic > Little Logic > LL Buffer, Driver and Transceiver > LL Non-Inverting Buffer and Driver > LL Buffer Gate with 3-State Output > SN74AHCT1G125 Status:


    Original     		PDF SN74AHCT. SN74AHCT1G125 SN74AHCT1G125 75LVT1624 SN74AUC125 SN74AHC595 Huang85261, SN74AHCT1G125: com/product/sn74ahct1g125 SOT23 marking 619 SN74AHCT MARKING 313 sc70 359 SOT23 Buffer gate 6 pin sot23 SOT23 MARKING SB AHC* marking marking 619 sot23 abstract Buffer gate sot23

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201 DGK-8 www.ti.com . SLOS416C – JUNE 2003 – REVISED JUNE 2009 1.8-GHz, LOW DISTORTION, CURRENT-FEEDBACK AMPLIFIER


    Original     		PDF THS3201 SLOS416C THS3201

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication


    Original     		PDF THS3201-EP SGLS283

    EME-G600

    Abstract: 15-V THS3001 THS3122 THS3201 THS3201-EP THS3202 THS4271
    Text: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication


    Original     		PDF THS3201-EP SGLS283 EME-G600 15-V THS3001 THS3122 THS3201 THS3201-EP THS3202 THS4271

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication


    Original     		PDF THS3201-EP SGLS283

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication


    Original     		PDF THS3201-EP SGLS283

    Untitled

    Abstract: No abstract text available
    Text: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication


    Original     		PDF THS3201-EP SGLS283

    marking SH SOT23

    Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
    Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123


    OCR Scan     		PDF 0235bDS DO-35 OD-123 OT-23 marking SH SOT23 smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking

    hearing aids amplifiers

    Abstract: No abstract text available
    Text: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance


    OCR Scan     		PDF SST200/200A S-04028-- 04-Jun-01 hearing aids amplifiers

    MV409

    Abstract: No abstract text available
    Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MMBV409L MV409 Silicon Epicap Diodes . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies


    OCR Scan     		PDF MMBV409L MV409 MV409