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    MARKING 5Y TRANSISTOR Search Results

    MARKING 5Y TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 5Y TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FHT9013

    Abstract: marking 5Y marking 5y SOT23
    Text: ᄰ፿ྯ૵਌ General Purpose Transistors FHT9012 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 hFE（2）=25（Min.）at VCE=-6V, IC=-400mA. Complementary to FHT9013 與 FHT9013 互補


    Original     		PDF 25Min -400mA. FHT9013 OT-23 FHT9012 OT-23 hFE1FHT9012O FHT9012Y -100mA FHT9013 marking 5Y marking 5y SOT23

    FHT9012O

    Abstract: FHT9012 FHT9012G FHT9012Y FHT9013
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 General Purpose Transistors 三极管 PNP Silicon FHT9012 FEATURES 特点 • Excellent hFE Linearity hFE 线性特性极好


    Original     		PDF FHT9012) -400mA. FHT9013 FHT9012O FHT9012Y FHT9012G -100A -100mA FHT9012 FHT9013

    marking 5y transistor

    Abstract: XN4503 MARKING 5Y 2SD813
    Text: Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Rating Collector to emitter voltage of Emitter to base voltage


    Original     		PDF XN4503 100MHz marking 5y transistor XN4503 MARKING 5Y 2SD813

    Untitled

    Abstract: No abstract text available
    Text: Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification


    Original     		PDF MSG33004

    Untitled

    Abstract: No abstract text available
    Text: Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2


    Original     		PDF MSG43004

    74LVC04AD

    Abstract: marking code 5y
    Text: 74LVC04A Hex inverter Rev. 8 — 26 September 2011 Product data sheet 1. General description The 74LVC04A provides six inverting buffers. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V


    Original     		PDF 74LVC04A 74LVC04A JESD8-C/JESD36 JESD22-A114F JESD22-A115-B JESD22-C101E 74LVC04APW 74LVC04APW 74LVC04AD/N 74LVC04AD marking code 5y

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 0.15 min. 3 • Compatible between high breakdown voltage and high cut-off frequency


    Original     		PDF 2002/95/EC) MSG33004

    marking 5y transistor

    Abstract: 2SD813 XN04503 XN4503
    Text: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Rating Collector to emitter voltage


    Original     		PDF XN04503 XN4503) marking 5y transistor 2SD813 XN04503 XN4503

    MSG43004

    Abstract: 5.5 GHz power amplifier
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages


    Original     		PDF 2002/95/EC) MSG43004 MSG43004 5.5 GHz power amplifier

    2SD813

    Abstract: XN04503 XN4503
    Text: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planer transistor ● 3 2 0.50+0.10 –0.05 1.1+0.2 –0.1 10° 2SD0813(2SD813) x 2 elements • Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		PDF XN04503 XN4503) 2SD0813 2SD813) 2SD813 XN04503 XN4503

    MSG43004

    Abstract: 5.5 GHz power amplifier
    Text: Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2


    Original     		PDF MSG43004 MSG43004 5.5 GHz power amplifier

    2SC1788

    Abstract: XN04503 XN4503
    Text: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		PDF XN04503 XN4503) 2SC1788 2SC1788 XN04503 XN4503

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 0.15 min. 3 • Compatible between high breakdown voltage and high cut-off frequency


    Original     		PDF 2002/95/EC) MSG33004

    MSG33004

    Abstract: No abstract text available
    Text: Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 0.15 min. 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification


    Original     		PDF MSG33004 MSG33004

    MSG33004

    Abstract: No abstract text available
    Text: Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification


    Original     		PDF MSG33004 MSG33004

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o


    Original     		PDF 2002/95/EC) MSG43004

    2sc1788

    Abstract: No abstract text available
    Text: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1788 x 2 5˚ M Di ain sc te on na


    Original     		PDF XN04503 XN4503) 2sc1788

    MSG33004

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33004 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 Collector current Collector power dissipation *


    Original     		PDF 2002/95/EC) MSG33004 MSG33004

    2SC1788

    Abstract: XN04503 XN4503
    Text: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10


    Original     		PDF XN04503 XN4503) 2SC1788 2SC1788 XN04503 XN4503

    transistor 1211

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2493 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ;r-M OSV 2SK2493 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, AND DC-DC CONVERTER APPLICATIONS • 2.5V Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2493 08mf2 20kfl) transistor 1211

    2SK2962

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2962 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2962 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 MAX. 4V Gate Drive


    OCR Scan     		PDF 2SK2962 221mH 2SK2962

    transistor fb

    Abstract: AN USQ 125 EI96
    Text: TOSHIBA 3SK256 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK256 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. U nit in mm 2. 1 + 0 . 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.


    OCR Scan     		PDF 3SK256 015pF transistor fb AN USQ 125 EI96

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SK2882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tz-M O S V 2SK2882 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source On Resistance : Rd S (ON) = 0.08 il (Typ.)


    OCR Scan     		PDF 2SK2882

    2SK2996

    Abstract: DIODE ED 34
    Text: TO SHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2996 2SK2996 DIODE ED 34