DSC8102
Abstract: No abstract text available
Text: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSC8102
DSC8102
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000
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BC847B
BC857B.
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
BC847B
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SST3904
Abstract: 2N3904 Transistors UMT3904 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3904 MMST3906
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
2N3904 equivalent
2N3904 transistor data sheet free download
marking CODE r1a
transistor R1A
2N3906
MMST3906
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transistor 131 8D
Abstract: g1k bc848b BC848C BC848B BC848BW BC858B BC858BW T106 T116 MARKING 5D NPN
Text: BC848BW / BC848B / BC848C Transistors NPN General Purpose Transistor BC848BW / BC848B / BC848C !External dimensions Units : mm !Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2
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BC848BW
BC848B
BC848C
BC858B
BC858BW.
BC848BW
SC-70
transistor 131 8D
g1k bc848b
BC848C
BC858BW
T106
T116
MARKING 5D NPN
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sot-23 Marking 3D
Abstract: KST5088 KST5089 5089 silicon npn transistor transistor 5d
Text: KST5088/5089 KST5088/5089 Low Noise Transistor 2 1 SOT-23 NPN Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088
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KST5088/5089
OT-23
KST5088
KST5089
sot-23 Marking 3D
KST5088
KST5089
5089 silicon npn transistor
transistor 5d
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SST3904
Abstract: UMT3904 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 zExternal dimensions Unit : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.7±0.1 0.2 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
marking CODE r1a
2N3904
2N3906
MMST3906
SST3906
T106
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Untitled
Abstract: No abstract text available
Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B External dimensions Unit : mm Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4
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BC848BW
BC848B
BC858B
BC858BW.
BC848BW
SC-70
BC848B,
BC848C
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BC848B
Abstract: transistor 131 8D BC848BW BC848C BC858B BC858BW T106 T116 MARKING 5D NPN
Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4
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BC848BW
BC848B
BC858B
BC858BW.
BC848BW
SC-70
BC848B,
BC848C
BC848B
transistor 131 8D
BC848C
BC858BW
T106
T116
MARKING 5D NPN
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SST3904
Abstract: UMT3904 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
2n3906 hie
2N3904
2N3906
MMST3906
SST3906
T106
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Untitled
Abstract: No abstract text available
Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3
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UMT3904
SST3904
MMST3904
UMT3906
SST3906
MMST3906.
UMT3904
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SST3904
Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116
Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3
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UMT3904
SST3904
MMST3904
UMT3906
SST3906
MMST3906.
UMT3904
marking CODE r1a
transistor R1A
marking "3D 0D"
MMST3904
MMST3906
T106
T116
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KST5088
Abstract: KST5089 MARK 5D SOT
Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088
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KST5088/5089
OT-23
KST5088
KST5089
100ner
KST5088
KST5089
MARK 5D SOT
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Untitled
Abstract: No abstract text available
Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4
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BC848BW
BC848B
BC858B
BC858BW.
BC848BW
SC-70
BC848B,
BC848C
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MARKING 5D NPN
Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088
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KST5088/5089
OT-23
KST5088
KST5089
MARKING 5D NPN
MARK 5D SOT
sot-23 Marking 3D
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transistor c32725
Abstract: c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
Text: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 — 21 February 2005 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1: Product overview Type number Package NPN complement Philips
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BC807;
BC807W;
BC327
BC807
BC817
BC807W
OT323
SC-70
BC817W
transistor c32725
c32725
c32740
BC327 C327
C32740 NPN transistor
C32725 NPN transistor
C32740 PNp transistor
c32716
c32725 transistor
transistor c32740
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC7102 Silicon NPN epitaxial planar type For low frequency amplification DSC8102 in MiniP3 type package • Features Package Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count.
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2002/95/EC)
DSC7102
DSC8102
DSC7102
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5090 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 0 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5090
2SC509
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Untitled
Abstract: No abstract text available
Text: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .
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2SC3123
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2N3904S
Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 1n9161 1N916
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(Max.) @Vce=30V, Veb=3V.
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2N3904S
2N3906S.
C0MM01N
2N3904S
2N3906S
2N3904S SOT-23
2N3906S SOT-23
1n9161
1N916
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR 2 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS S C 3 1 3 8 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS TTicrVi Vnlfncrp 1-0.5 -0.3 2.5 • V n T in = -9.00V ( IVT!n V1 - ~ ' \- + 1 5 - 0 . 15 . VCEO = 200V (Min.)
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2SC3138
2SA1255
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 U nit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6MAX —J— 1.7MAX. • High DC Current Gain and Excellent hjnE Linearity 0.4 ±0.05
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2SC2982
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2716 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i 7 1 fi U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 3 .5 - Q 3 AM FREQUENCY CONVERTER APPLICATIOS. + 0.25 i.5-ai 5 f—
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2SC2716
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