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    MARKING 56B 6 Search Results

    MARKING 56B 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy

    MARKING 56B 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G SC-74 Unit-25DPMT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G SC-74 -25DPMT1G

    transistor 56B marking

    Abstract: Transistor 59B 856B 858C BC856 MARKING bc847 SOT-23 B 856B
    Text: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary PNP Devices : BC846/BC847/BC848/BC849 Series


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2002/95/EC OT-23 MIL-STD-750 transistor 56B marking Transistor 59B 856B 858C MARKING bc847 SOT-23 B 856B

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G MAXIMUM RATING - NPN Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G SC-74 S17-25DPMT1G

    Untitled

    Abstract: No abstract text available
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 OT-23 -100mA BC846/BC847/BC848/BC849 2002/95/EC IEC61249

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G SC-74 Unit-25DPMT1G

    transistor 56B marking

    Abstract: TRANSISTOR BC 119
    Text: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series


    Original     		PDF BC856/BC857/BC858/BC859 -100mA BC846/BC847/BC848/BC849 OT-23 MIL-STD-202 transistor 56B marking TRANSISTOR BC 119

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    c858

    Abstract: BC856R
    Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 2002/95/EC IEC61249 OT-23 OT-23 c858 BC856R

    BC859B-AU

    Abstract: transistor BC SERIES BC856B-AU
    Text: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 FTLUHTXDOLW\V\VWHPFHUWLILFDWH76 2002/95/EC IEC61249 OT-23 BC859B-AU transistor BC SERIES BC856B-AU

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, MIL-STD-750, BC856AW BC856BW

    CER0456B

    Abstract: MARKING 56B 6
    Text: CER0456B 5.8 GHz BPF Rev 1 – Origin Date: July 31, 2006 – Revision Date: January 12, 2007 Features • Low Loss • Low Ripple Description Surface mount, silver Ag coated ceramic filter for use in broadband applications. Weight: 1.1 grams typical Material: Filter is composed of a ceramic


    Original     		PDF CER0456B CER0456B MARKING 56B 6

    Untitled

    Abstract: No abstract text available
    Text: BC856BW-AU ~ BC857CW-AU PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA Complimentary NPN Devices : BC856BW-AU/BC857AW-AU Series


    Original     		PDF BC856BW-AU BC857CW-AU 100mA BC856BW-AU/BC857AW-AU TS16949 AEC-Q101 2011/65/EU IEC61249 OT-323, MIL-STD-750,

    SK52B

    Abstract: SK 54B SK54B
    Text: SK52B - SK515B CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop


    Original     		PDF SK52B SK515B SMB/DO-214AA E-326243 SK52B-SK54B SK55B-SK56B SK59B-SK515B SK55B-SK515B SK 54B SK54B

    200mWatts

    Abstract: transistor 56B marking
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC856AW 200mWatts transistor 56B marking

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2010-REV

    zener 73B

    Abstract: smc5346b SMC53
    Text: SMC5342B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 5.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with high


    Original     		PDF SMC5342B DO-214AB) SMC/DO-214AB MIL-STD-750 04-Nov-09 zener 73B smc5346b SMC53

    Untitled

    Abstract: No abstract text available
    Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020


    Original     		PDF SK52B SK515B J-STD-020 2011/65/EU 2002/96/EC DO-214AA AEC-Q101 D1309050

    Untitled

    Abstract: No abstract text available
    Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020


    Original     		PDF SK52B SK515B J-STD-020 2011/65/EU 2002/96/EC DO-214AA AEC-Q101 JESD22-B102 D1309050

    Untitled

    Abstract: No abstract text available
    Text: SK52B - SK515B CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability


    Original     		PDF SK52B SK515B SMB/DO-214AA J-STD-020D, RS-481

    ZENER 34b

    Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B


    OCR Scan     		PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= CMBZ-5252B CMBZ-5253B CMBZ-5254B ZENER 34b 5252B 5255B zener diode 33B 43B MARKING 8f zener 40b marking diode 43b

    Untitled

    Abstract: No abstract text available
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B


    OCR Scan     		PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ-5252B CMBZ-5253B CMBZ-5254B CMBZ-5255B CMBZ-5256B

    5251B

    Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B


    OCR Scan     		PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= B3fl33cà CMBZ-5250B CMBZ-5251B 23fl33R4 5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1181B_ Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high output power, and low power dissipation. The internally matched 50 i2 input and output


    OCR Scan     		PDF KGF1181B_ KGF1181B b7E4E40 KGF1181B b72424D 022bc