152JE
Abstract: ohmite dial International Resistive Company ohmite date code spf 9001 334JE 750JE RC07 resistor IRC RC07 rc32 carbon resistor
Text: CARBON COMPOSITION RESISTOR ISO-9001 Registered Molded Body IBT SERIES Tinned Leads • Meets performance standards of EIA RS-172 • Hot molded process for product uniformity • Ideal for pulse-load handling Molded Composition Elements PERFORMANCE CHARACTERISTICS TESTED PER MIL-STD-202 :
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ISO-9001
RS-172
MIL-STD-202)
1-866-9-OHMITE
152JE
ohmite dial
International Resistive Company
ohmite date code
spf 9001
334JE
750JE
RC07 resistor
IRC RC07
rc32 carbon resistor
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tm 48f 038 transformer
Abstract: 2j 103k 51f smd
Text: Custom Solutions & Manufacturing Excellence From the day our company opened for business in 1947, our continuous growth as a U.S. manufacturer has been a great source of pride. We have accomplished this, in part, by providing custom solutions for your challenging circuit designs. Our products are
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MIL-PRF-39010,
tm 48f 038 transformer
2j 103k
51f smd
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Untitled
Abstract: No abstract text available
Text: Weight/Mass 0.490 Grams Maximum Packaging Tape & reel 24mm : 13" reel, 1500 pieces max. SERIES P3519 FERRITE CORE 0.01 5.35 0.10 ±10% 0.01 5.11 0.12 ±10% 0.01 4.83 0.15 ±10% 0.01 4.62 0.18 ±10% 0.02 4.39 0.22 ±10% 0.02 3.17 0.27 ±10% 0.02 3.97 0.33
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P3519
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Surface Mount
Abstract: P3519
Text: Weight/Mass 0.490 Grams Maximum Packaging Tape & reel 24mm : 13" reel, 1500 pieces max. SERIES P3519 FERRITE CORE 0.01 5.35 0.10 ±10% 0.01 5.11 0.12 ±10% 0.01 4.83 0.15 ±10% 0.01 4.62 0.18 ±10% 0.02 4.39 0.22 ±10% 0.02 3.17 0.27 ±10% 0.02 3.97 0.33
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P3519
96sales
P3519R
P3519
3260B
Surface Mount
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334j
Abstract: 684j 823j 105j 250 274J marking 333j 1812R
Text: API_newlayouts_single:APIcatalog_newlayouts 8/27/10 3:22 PM Page 25 R -101K -121K -151K -181K -221K -271K -331K -391K -471K -561K -681K -821K 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 Actual Size Physical Parameters Inches Millimeters A 0.166 to 0.190
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-101K
-121K
-151K
-181K
-221K
-271K
-331K
-391K
-471K
-561K
334j
684j
823j
105j 250
274J
marking 333j
1812R
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PDF
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Surface Mount
Abstract: 1mh5 222j marking 333j 0629A
Text: API_newlayouts_single:APIcatalog_newlayouts 6/28/11 11:42 AM Page 25 F R -100M -120M -150M -180M -220M -270M -330M -390M -470M -560M -680M -820M 0.010 0.012 0.015 0.018 0.022 0.027 0.033 0.039 0.047 0.056 0.068 0.082 -101K -121K -151K -181K -221K -271K -331K
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1812R
-100M
-120M
-150M
-180M
-220M
-270M
-330M
-390M
-470M
Surface Mount
1mh5
222j
marking 333j
0629A
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PDF
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684j
Abstract: 224J 823j marking 333j 1812R 427 SMD CODE MARKING
Text: R -101K -121K -151K -181K -221K -271K -331K -391K -471K -561K -681K -821K 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 Actual Size Physical Parameters Inches Millimeters A 0.166 to 0.190 4.22 to 4.83 B 0.118 to 0.134 3.00 to 3.40 C 0.118 to 0.134
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-101K
-121K
-151K
-181K
-221K
-271K
-331K
-391K
-471K
-561K
684j
224J
823j
marking 333j
1812R
427 SMD CODE MARKING
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PDF
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222js
Abstract: No abstract text available
Text: API_newlayouts_single:APIcatalog_newlayouts 7/22/10 10:24 AM Page 10 R F NG TI RA A T m EN UM RR IM E CU X NC MA TA S) S SI HM RE (O M DC MU ) Hz XI (M MA M MU NI ) MI Hz F (M SR Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN ER
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-101KS
-121KS
-151KS
-181KS
-221KS
-271KS
-301KS
-331KS
-361KS
-391KS
222js
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PDF
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Untitled
Abstract: No abstract text available
Text: R F NG TI RA A T m EN UM RR IM E CU AX ANC ) M ST S SI HM RE (O M DC MU ) Hz XI (M MA M MU NI ) MI Hz F (M SR Y NC UE UM EQ IM IN FR M ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN ER * -101KS -121KS -151KS -181KS -221KS -271KS -301KS -331KS -361KS -391KS
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-101KS
-121KS
-151KS
-181KS
-221KS
-271KS
-301KS
-331KS
-361KS
-391KS
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PDF
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Surface Mount
Abstract: 474J 334J marking 101k
Text: API_newlayouts_single:APIcatalog_newlayouts 6/28/11 11:43 AM Page 26 F R ROVE D R* Unshielded Surface Mount Inductors L MI PP -100M -120M -150M -180M -220M -270M -330M -390M -470M -560M -680M -820M -01* -02* -03* -04* -05* -06* -07* -08* -09* -10* -11* -12*
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MIL1812R
MIL1812
-100M
-120M
-150M
-180M
-220M
-270M
-330M
-390M
Surface Mount
474J
334J
marking 101k
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M83446
Abstract: 153JS 223js
Text: L I TA R Y PP ROVE D Micro i Chip Inductors RF INDUCTORS DA SH Military Specifications MIL-PRF-83446/38 Physical Parameters Inches A 0.080 Max. B 0.145 to 0.155 C 0.115 to 0.125 D 0.070 Min. E 0.020 to 0.030 F 0.020 Max. Typ. Millimeters 2.03 Max. 3.68 to 3.94
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M83446/38
MIL-PRF-83446/38
M83446
153JS
223js
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223js
Abstract: MIL-PRF-83446
Text: L I TA R Y PP ROVE D DA SH Micro i Chip Inductors # IN DU CT AN CE µ TO H LE RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M MU Hz DC ) M R ( M MA ES H z) XI IST M CU UM ANC R E MA RE (OH X. NT MS (m RA ) A) TI NG MI DA SH A MI L 160R 160 NU MB
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M83446/38
-100MS
-120MS
-150MS
-180MS
-220MS
-270MS
-330MS
-390MS
-470MS
223js
MIL-PRF-83446
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Untitled
Abstract: No abstract text available
Text: L I TA R Y PP ROVE D DA SH Micro i Chip Inductors # IN DU CT AN CE µ TO H LE RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M MU Hz DC ) M R ( M MA ES H z) XI IST M CU UM ANC R E MA RE (OH X. NT MS (m RA ) A) TI NG MI DA SH A MI L 160R 160 NU MB
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M83446/38
-100MS
-120MS
-150MS
-180MS
-220MS
-270MS
-330MS
-390MS
-470MS
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223js
Abstract: No abstract text available
Text: F R ROVE D R* SH DA Micro i Chip Inductors -101KS -121KS -151KS -181KS -221KS -271KS -301KS -331KS -361KS -391KS -421KS -471KS -561KS -681KS -821KS -102JS -122JS -152JS -182JS -222JS -272JS -332JS -392JS -472JS -562JS -682JS -822JS -103JS -123JS -153JS -183JS
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-100MS
-120MS
-150MS
-180MS
-220MS
-270MS
-330MS
-390MS
-470MS
-560MS
223js
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19090HR3
MRF5S19090HSR3
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95F4579
Abstract: Resistor mttf mrf5s21090
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21090HR3
MRF5S21090HSR3
95F4579
Resistor mttf
mrf5s21090
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MARKING C33
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19130HR3
MRF5S19130HSR3
MARKING C33
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PT1000 CONVERSION TABLE
Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Text: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680
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P1330
P1812
S3483
SDS130
SDS680
SDS850
CMT4545
FW1405
SPD62
SPD42R
PT1000 CONVERSION TABLE
ER 2510 type bobbin
RG-9B/U cable
2j 183j
a431 csp 1040 39p
SMD MARKING CODE 19l
RG-180 connector
685 35K
222M SE
SMD marking code BR24
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104j100
Abstract: 103j100 223j100 105J100 103J100J31 SMC5.7 152J50J31 evox smc 474J100 225J50C31
Text: SMC • Metallized polyphenylene sulphide PPS SMD • According to IEC 60384-20 H TYPICAL APPLICATIONS B CONSTRUCTION 0.5 Timing, filtering. Memory capacitor. High stability and accuracy. High temperature use. Polyphenylene sulphide (PPS) film capacitor for surface mounting.
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50A31
SMC10
123J250A31
153J250A31
183J250A31
223J250A31
104j100
103j100
223j100
105J100
103J100J31
SMC5.7
152J50J31
evox smc
474J100
225J50C31
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smc10.2
Abstract: 104j100 105J100 223j100 684J100 104j100a31 823J50J35 225J50C31 smc5.7 472J100
Text: SMC • Metallized polyphenylene sulphide PPS SMD • According to IEC 60384-20 TYPICAL APPLICATIONS Timing, filtering. Memory capacitor. High stability and accuracy. High temperature use. CONSTRUCTION Polyphenylene sulphide (PPS) film capacitor for surface mounting.
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Mini250A31
SMC10
223J250A31
273J250A31
333J250A31
393J250A31
smc10.2
104j100
105J100
223j100
684J100
104j100a31
823J50J35
225J50C31
smc5.7
472J100
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474J100
Abstract: 564J100 104j100 223j100 684j100c31 105J100 SMD CAPACITOR CODES smd Capacitor marking codes 154J100 SMC5.7
Text: 2002-04-17 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 65-557-00 65-557-18 65-557-26 65-557-34 65-557-42 65-557-59 65-557-67 65-557-75 65-557-83 65-557-91 65-558-09
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15nF/50VDC
22nF/50VDC
33nF/50VDC
47nF/50VDC
68nF/50VDC
100nF/50VDC
150nF/50VDC
220nF/50VDC
330nF/50VDC
470nF/50VDC
474J100
564J100
104j100
223j100
684j100c31
105J100
SMD CAPACITOR CODES
smd Capacitor marking codes
154J100
SMC5.7
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104j100
Abstract: kem 5361 684J100 capacitor 104J100 334J100 682J100 110B4 LT 7242 124J100 KEM 5611
Text: K F M F T l \ C IV IC TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 I T110 SERIES — POLAR TYPE, T212 CSR13 KEMET standard herm etic sealed T110 Series are desirable for use in high humidity environm ents. T hey are ruggedly built, designed for Higher CV values in com parable case sizes are available in KEMET
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OCR Scan
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MIL-C-39003
CSR13)
S122b77
T110/T212
104j100
kem 5361
684J100
capacitor 104J100
334J100
682J100
110B4
LT 7242
124J100
KEM 5611
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PDF
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RM73B2B
Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19130H
MRF5S19130HR3
MRF5S19130HSR3
RM73B2B
465B
AN1955
MRF5S19130H
MRF5S19130HSR3
RM73B2
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PDF
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Untitled
Abstract: No abstract text available
Text: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19090H
MRF5S19090HR3
MRF5S19090HSR3
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