SOT23 JEDEC standard
Abstract: FAN2504S25X AHW SOT23 laptop power circuit FAN2504
Text: www.fairchildsemi.com FAN2504, FAN2505 200 mA CMOS LDO Regulators Features • • • • • • • wide variety of external capacitors, and the compact SOT23-5 surface-mount package. The FAN2504/05 family of products offer significant improvements over older BiCMOS designs
|
Original
|
PDF
|
FAN2504,
FAN2505
OT23-5
FAN2504/05
FAN2504
FAN2505
FAN2504:
OT-23
SOT23 JEDEC standard
FAN2504S25X
AHW SOT23
laptop power circuit
|
marking 702 sot23
Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,
|
Original
|
PDF
|
BSR18A
marking 702 sot23
702 sot23
SP SOT23
ON5258
marking code 10 sot23
marking code p12 sot23
MARKING CODE 13 SOT23
Philips SOT23 code marking
ON5257
marking code 702 SOT23
|
NXP date code marking
Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
|
Original
|
PDF
|
PMBT2222;
PMBT2222A
O-236AB)
PMBT2222
PMBT2222A
O-236AB
PMBT2907
PMBT2907A
NXP date code marking
marking 1B
marking code v6 SOT23
NXP MARKING SMD IC CODE
SOT23 NXP power dissipation TO-236AB
MARKING CODE SMD IC
PMBT2222A,215
smd code marking .1p
|
SOT23R
Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Text: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM
|
Original
|
PDF
|
ZC2tl13E
ZC2812E
ZC281
SOT23R
12E MARKING
ZC2812E
wa sot23
SOT23 WA
marking 54 sot23
DSA003721
|
MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
|
Original
|
PDF
|
ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
|
BAL74
Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
|
Original
|
PDF
|
BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
sot23 marking code 74
|
BAL99
Abstract: No abstract text available
Text: BAL99. Silicon Switching Diode For high-speed switching applications BAL99 3 1 2 Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80
|
Original
|
PDF
|
BAL99.
BAL99
Feb-03-2003
BAL99
|
BAL74
Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
|
Original
|
PDF
|
BAL74/BAR74.
BAL74
BAR74
BAL74,
BAL74
MARKING SOT23 jbs
BAR74
SOT23 BAL74
BCW66
|
A194FH
Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4
Text: AOS Semiconductor Product Reliability Report AOZ8000CI, rev 2 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000CI.
|
Original
|
PDF
|
AOZ8000CI,
AOZ8000CI.
AOZ8000CI
617x10-5
-105D
A194FH
84-3j
mp8000ch4
A194-FH
2P3M
a194
IEC-61000-4-2
SS MARKING sot23
MP-8000CH4
|
Untitled
Abstract: No abstract text available
Text: BAL99. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL99 ! Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
BAL99.
BAL99
|
BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
|
BAS116
Abstract: BCW66
Text: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 ! Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAS116.
BAS116
BAS116
BCW66
|
BAL99
Abstract: BCW66
Text: BAL99. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL99 ! Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
BAL99.
BAL99
BAL99
BCW66
|
Untitled
Abstract: No abstract text available
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
BAL74/BAR74.
BAL74
BAR74
|
|
|
bal99
Abstract: No abstract text available
Text: BAL99. Silicon Switching Diode • For high-speed switching applications BAL99 ! Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80
|
Original
|
PDF
|
BAL99.
BAL99
bal99
|
Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
|
Original
|
PDF
|
SMBD914/MMBD914.
SMBD914/MMBD914
|
BAS116
Abstract: No abstract text available
Text: BAS116. Silicon Low Leakage Diode Low-leakage applications Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage
|
Original
|
PDF
|
BAS116.
BAS116
EHB00054
EHB00055
Feb-03-2003
BAS116
|
BAL74
Abstract: EHA00001
Text: BAL74 Silicon Switching Diode 3 For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM
|
Original
|
PDF
|
BAL74
VPS05161
EHA00001
EHB00003
EHB00004
Jul-27-2001
EHB00005
BAL74
EHA00001
|
BAS116
Abstract: BCW66
Text: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS116 ! Type Package Configuration Marking BAS116 SOT23 single JVs Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
BAS116.
BAS116
BAS116
BCW66
|
Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified
|
Original
|
PDF
|
SMBD914/MMBD914.
SMBD914/MMBD914
|
Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
SMBD914/MMBD914.
SMBD914/MMBD914
|
bar74
Abstract: oscillograph
Text: BAR74 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM
|
Original
|
PDF
|
BAR74
VPS05161
EHA07002
EHB00013
EHB00014
Jul-27-2001
EHB00015
bar74
oscillograph
|
Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
OCR Scan
|
PDF
|
ZC2812E
ZC2813E
lplt-20m
ZC2811E
|
marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
|
OCR Scan
|
PDF
|
ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
|
