PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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chip resistor marking
Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Text: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm
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NRC06FxxxxTR
NRC06F10R0TR
NRC06F10R2TR
NRC06F10R5TR
NRC06F10R7TR
NRC06F11R0TR
NRC06F11R3TR
NRC06F11R5TR
NRC06F11R8TR
NRC06F12R1TR
chip resistor marking
604K-Ohm
marking 53d
marking 34x
NRC06F1273TR
511K-Ohm
NRC06F21R0TR
NRC06F20R5TR
NRC06F2000TR
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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NATIONAL SEMICONDUCTOR MARKING CODE sot
Abstract: national marking code P9506AB national marking code 8 soic NATIONAL SEMICONDUCTOR MARKING CODE S9506AB M51AB On semiconductor date Code national marking date code M9506AB
Text: Page 1 of 4 QA/Product Engineering Europe COMPONENT COMPONENTMARKING MARKING Components are marked - on front side - full name or coded - one or more lines M9506AB LM2901N First Line of Marking Examples: Standard NS U M51AB LM2901M S9506AB SM9448AH Z XX YY TT
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M9506AB
LM2901N
M51AB
LM2901M
S9506AB
SM9448AH
M51AA
20lead
OT-23,
OT-223,
NATIONAL SEMICONDUCTOR MARKING CODE sot
national marking code
P9506AB
national marking code 8 soic
NATIONAL SEMICONDUCTOR MARKING CODE
S9506AB
M51AB
On semiconductor date Code
national marking date code
M9506AB
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Untitled
Abstract: No abstract text available
Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF
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hc4851a
Abstract: HP4155C 51A SOIC hc4051 948F MC14051B sensor microcontroller Analog devices marking Information PACKAGE SOIC_ HCT4851AG
Text: MC74HCT4851A Analog Multiplexers/ Demultiplexers with Injection Current Effect Control with LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS Automotive Customized This device is pin compatible to standard HC4051 and MC14051B analog mux/demux devices, but feature injection current effect
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MC74HCT4851A
HC4051
MC14051B
MC74HCT4851A/D
hc4851a
HP4155C
51A SOIC
948F
MC14051B
sensor microcontroller
Analog devices marking Information PACKAGE SOIC_
HCT4851AG
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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5.0smdj
Abstract: No abstract text available
Text: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE CLAMPING PULSE LEAKAGE
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5000Watts
10/1000s
5.0smdj
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Untitled
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)
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5bge
Abstract: 5bgm 33cA 5BFz
Text: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power DEVICE MARKING CODE 5.0SMDJ PART NUMBER 5.0SMDJ 20A Uni-polar Bi-polar REVERSE BREAKDO BREAKDO MAXIMUM REVERSE PEAK WN WN STANDTEST CLAMPING LEAKAGE
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5000Watts
50mVp-p
5bge
5bgm
33cA
5BFz
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Untitled
Abstract: No abstract text available
Text: 5.0SMDJ 5000W Series 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 11 TO 170 Volts 5000Watts Peak Pulse Power " * " 标注为常用型号 " * " Stand for commonly used models 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar
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5000Watts
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5.0smdj
Abstract: 5pfm 5PFE
Text: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power 5.0SMDJ PART NUMBER DEVICE MARKING REVERSE BREAKDOWN BREAKDOWN TEST VOLTAGE VOLTAGE STAND- OFF CODE CURRENT IT VBR V VBR(V) VOLTAGE (mA) VRWM(V)
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5000Watts
50mVp-p
5.0smdj
5pfm
5PFE
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4435a
Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HFM101 – HFM108 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30
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HFM101
HFM108
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HFM101 – HFM106 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30
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HFM101
HFM106
HFM102
HFM103
HFM104
HFM105
HFM107
HFM108
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP0904GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-Resistance R DS ON Fast Switching Characteristics G RoHS-compliant, halogen-free 40V 10mΩ ID 51A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best
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AP0904GH/J-HF-3
O-252
AP0904GH-HF-3
O-252
O-251
AP0904GJ-HF-3)
AP0904
0904GJ
O-251
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
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51a marking
Abstract: FDP51N25
Text: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)
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FDP51N25
O-220
FDP51N25
51a marking
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
FDPF51N25
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51a marking
Abstract: FDP51N25 FDPF51N25
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
51a marking
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OV07251
Abstract: Buss M151 varistor buss M200-EX M461 M581-DG M251-CU M400D M151-EF M102D
Text: Metal Oxide Varistors Bussmann 05 S e rie s to 25 S e rie s - Through Hole M O V’s Maximum Transient Pow er D issipation Ratings Pm Series Pm-watts 0.15 0.25 0.3 0.4 0.45 0.5 05 07 08 10 11 12 Series Pm-watts 0.6 0.6 0.8 1.0 1.2 14 16 18 20 25 Standard Marking:
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M461-F0
M511-FQ
M751-FV
M102-FW
UL1414
UL1449
OV25551
OV25421
OV25301
OV25251
OV07251
Buss M151
varistor buss
M200-EX
M461
M581-DG
M251-CU
M400D
M151-EF
M102D
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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OCR Scan
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PDF
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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pn2222
Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Text: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min
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OCR Scan
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MPSW01A
MPSW51A
NSDU01
T0-202
PN2222
PN3643
PN4141
TN2219
O-237
2N4125
pn2222
pn2907
NSDU01
2N4125
TN2219
"device marking"
BC213
BC214
MPSW01A
MPSW51A
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