2SJ0672
Abstract: 2SK3539 UP04979
Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage
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UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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Untitled
Abstract: No abstract text available
Text: DB3S308F Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 4T
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DB3S308F
UL-94
DB2S308
DB3S308F0L
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5962-9201001MXC
Abstract: 5962-9201001 QML-38535 VIC068A 4T SMD CODE Defense Supply Center Columbus TB28 Motorola smd marking codes CMGA7-P145 35T3
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R075-95. – LTG 95-03-30 Monica L. Poelking B Change AC limits in table I. Correct pin names in figure 2, figure 3, figure 4, and table III. Update boilerplate. Editorial changes throughout. – TVN
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5962-R075-95.
5962-9201001MYC
VIC068A-UMB
5962-9201001MXC
5962-9201001
QML-38535
VIC068A
4T SMD CODE
Defense Supply Center Columbus
TB28
Motorola smd marking codes
CMGA7-P145
35T3
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BARF
Abstract: carbon variable resistor ja-pa7
Text: TOC=OS 33% TOCOS AMERICA .INC. Specifications ~~5311 1% % % Model 'q iS$ &% Carbon film variable resistor as4 Customer Specification Number i4P+M!HM Customer Part Name i4P*L-afis4 Customer Yart Number Amf% TOCOS Part Name %*ii*#%% TOCOS Specification Number
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RY-7736
BARF
carbon variable resistor
ja-pa7
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital
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LMBD301LT1G
LMBD301
OT-23
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diode marking 4t
Abstract: LMDL301T1G
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package
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LMDL301T1G
diode marking 4t
LMDL301T1G
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diode marking 4t
Abstract: 4t marking
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital
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LMBD301LT1G
LMBD301
OT-23
diode marking 4t
4t marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes LMBD301LT1G S-LMBD301LT1G Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital
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LMBD301LT1G
S-LMBD301LT1G
LMBD301
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package
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LMDL301T1G
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LMDL301T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package
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LMDL301T1G
S-LMDL301T1G
LMDL301T1G
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Untitled
Abstract: No abstract text available
Text: MMDL301 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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MMDL301
OD-323
OD-323,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: MMBD301 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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MMBD301
OT-23,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: MMBD330 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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MMBD330
OT-323,
MIL-STD-202,
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JIS-C6443
Abstract: RH96N74 HST15
Text: m'J $& zs )%8 %F\ Model Carbon film variable resistor i3P+kM%%% Customer Specification Number m+t#*a% Customer Part Name m+kEPa"a%% Customer Part Number %+tJf%3 TOCOS Part Name XFZJX€XZ&#S~% TOKYO COSMOS ELECTRIC CO., L T D . n*%t%% :8 7228-8510 l % 2-268
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O3-3258-3159
O46-253-40
JIS-C6443
RH96N74
HST15
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package
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Original
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LMDL301T1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital
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LMBD301LT1G
LMBD301
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R/varistor m251
Abstract: No abstract text available
Text: ALUMINUM HOUSED RESISTORS RESISTORS 'C A PS * COILS 'D ELA Y LINE3 600 SERIES □ □ □ □ □ Standard units feature lug terminals 605 - 630 or threaded terminals (635 & 640). W idest selection in the industry! 5 to 1000 Watt 0.005Qto1 MO, tolerance to ,01%, TC to 5ppm
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005Qto1
18AWG
16AWG
R0025,
10ppm;
-----------------------100ppm
code--101
100ppm,
200ppm,
FA0188
R/varistor m251
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL T Y P E 2SC2996 F M /A M , RF, M IX , LOCAL, IF HIGH FREQUENCY AMPLIFIEP APPLICATIONS. FEATURES : • High Stability Oscillation Voltage On FM Local Oscillator. • Recommend FM/AM RF, MIX, Local and IF. M A X IM U M RATINGS <Ta = 2 5°C
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2SC2996
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S0MC
Abstract: No abstract text available
Text: 'i' yfr•¿ '• 'i'iAiw, ■U# ■■ 1 - 4i«iliñÉWÉfirtiiSr'- & t • ■-«■■- . n * S 5 S B 323039 g l t 8 À à Ÿ AMf» IÑCOf»P»CmAT«i» A L V n w T b : r à ,iir H v :& d . a m p p r o d u c t s . . í x r v c « ¿ b IM -V A T C N T S A N u /t » «
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transistor rf cm 1104
Abstract: SL 1424 11p
Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OT-143
transistor rf cm 1104
SL 1424 11p
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MMBD501
Abstract: MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56
Text: MOTOROLA SC DIODES/OPTO 1â D SOT-23 DIODES • -W — STYLE 12 t.3b?aSS G G 7 A b E b — STYLE 9 STYLE 11 2 0 - \4— 3 0 - 3I 02 2 y- |4~-00 1 P | -3 0 -H - O0 22 01 SINGLE COMMON CATHODE A 3 SERIES
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OT-23
STYLE19
STYLE18
MBAL99
MMBD6050X
MMBD914X
MBAS16
MMBV3700
MMBV3401
MMBD101
MMBD501
MMBD201
marking a2x sot23
MMBD201 4s
MBAV70
5c 70
marking A7x
marking 5AX
a1x sot23
MBAW56
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Untitled
Abstract: No abstract text available
Text: 3 4 TM i dooumwt to f it property of M w d Oaiperallow oad It i the Mpraaa oondBon H i I m t S b i dMoaad. n n d y t r i M ato ar In p ait far manufoetura or aala tv oapana ofcw than - - - V * that no right la granted haprtarIneanearl
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17SM2XXS4
07/IS/O
L17SM2XXS414T
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Untitled
Abstract: No abstract text available
Text: NOV. Sene 260 Series 260 T rimmpotentiometer C ennet Trimming Potentiom eters Cermet y U I T R O H M M. *4tW4SM/TDM Rn. +4t 041M/T27«7 Technische Daten Specification Typ 260 Type Nennbelastbarkeit P70 W 0,25 Power rating Widerstandswerte 10R 20R 50R a Resistance value
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041M/T27Â
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smd diode marking zf
Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •
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DF10SC4M
11-PKG
STO-220
J532-1)
smd diode marking zf
DF10SC4M
smd diode marking c
MTKM
Diode 1_b SMD
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