OFL-12
Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Text: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely
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1-9807-020-MS/AC
OFL-12
SFZ-3A
jds optics switch 1
Seiko fc
electronic passive components catalog
sii Product Catalog
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marking code 7G sot-143
Abstract: No abstract text available
Text: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997
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Q62702-F1055
OT-143
fl23Sb05
00bbT12
ENM0702I
fl23SbOS
marking code 7G sot-143
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Untitled
Abstract: No abstract text available
Text: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23
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BF799
BF799
500MHz
00127H4
DD12725
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241K010
Abstract: 471KD14 391kd10 431K010 471kd07 431KD07 471KD20 391kd07 471kd10 S47120
Text: E L E C T R I C A L WORLD PRODUCTS C H A R A C T E R INC 4flE D •nmahô odqqgo I S T I C S ? t ASIAN STAN DARD Featuring Sanken’s New Super “S ” Series Part Number (SNR) Actual Part Marking Disc IDiameter Size (mm) Rated Voltage AC Volts (R M S)
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201KD14
S201K20
221KD05
221KD07
S62120
S681K20
751KD10
751KD14
751KD20
S68120
241K010
471KD14
391kd10
431K010
471kd07
431KD07
471KD20
391kd07
471kd10
S47120
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings
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SMBT4124
Q68000-A8316
OT-23
flE35bQ5
G12255b
fiE35bOS
D1EE557
235b05
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Transistor K 799
Abstract: marking G2 NPN planar RF transistor
Text: Tem ic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • High power gain • Low noise figure 1 H TJ- - ET3 2 »9 2 8 0 BF799 Marking: G2 Plastic case SOT 23
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BF799
BF799
500MHz
00127H4
Transistor K 799
marking G2
NPN planar RF transistor
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Untitled
Abstract: No abstract text available
Text: Snap-In Capacitors LL Grade B 43 502 Long service life Operation at temperatures up to 85 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface
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KAL0274-A
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 4flE D • fi3bflb02 QGG37flb T48 M S O D j JOLITRON DEVICES PRODUCT SPECIFICATION cu st. + 12 VOLT 2 0°C % REGULATOR to DWG G e n e r a l | + 7 0°C t y p e no 1 si 1 REV. - Purpose T - tt- li- l* CJSE067 NPN Ge PNP TO-3 | CLASS STANDARD [71
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fi3bflb02
QGG37flb
CJSE067
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Untitled
Abstract: No abstract text available
Text: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.
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BAS29
BAS31
BAS35
BAS29,
BAS31
BAS35
OT-23
BAS29
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BST62
Abstract: BST60 BST61
Text: • bb53T31 DD2Sb41 4flb H A P X N AMER PHILIPS/DISCRETE BST60 BST61 BST62 b7E ]> JV P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.
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bb53T31
DD2Sb41
BST60
BST61
BST62
OT-89
BST50,
BST51
BST52
BST62
BST60
BST61
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IRF1520
Abstract: No abstract text available
Text: • International rä« Rectifier 4flSS4S2 DOlSOfifi 077 « I N R p d -9.830 IRFI520G INTERNATIONAL RECTIFIER HEXFET Power M O SFET Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating
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IRFI520G
T0-220
IRF1520
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rectifier ds3
Abstract: No abstract text available
Text: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating
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IRFIBF30G
O-220
rectifier ds3
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Untitled
Abstract: No abstract text available
Text: International k » 1Rectifier HEXFET P ow er M O SFET • • • • • • 4fl5S4S2 00145bA TT b • INR PD-9.567B IRC730 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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00145bA
IRC730
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Untitled
Abstract: No abstract text available
Text: i 4flS54S2 International k Rectifier 0=17 • IN R PD-9.656A IRFPC50 INTERNATIONAL HEXFET® Power M O SFET • • • • • • DD1S574 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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4flS54S2
IRFPC50
DD1S574
O-247
5545Z
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diode B14A
Abstract: IRFIP450 B14A diode B14A B14A marking irf-ip450 9645a
Text: 4flSS4S5 0015355 bbM • International K?R Rectifier INR PD-9.645A IRFIP450 INTERNATIONAL RECTIFIER b5E D HEXFET Power MOSFET Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm
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IRFIP450
O-247
t50KO
diode B14A
B14A diode
B14A
B14A marking
irf-ip450
9645a
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F9Z34
Abstract: No abstract text available
Text: m 4flSS4S2 DDii,3fi ßci2 • inr pd-9.648a International Imr] Rectifier IR F9Z34 HEXFET« Power MOSFET • • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching
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F9Z34
IRF9Z34
F9Z34
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Untitled
Abstract: No abstract text available
Text: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4fl5545E
DD1457b
IRC740
145J3
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AV73-1
Abstract: AV73 AV9173-01CS8 AV9173-01CN8 AV731 HSYNC GENERATE PIXEL CLOCK AV9173 AV9173-01 AV9173-01CC8 video genlock pll soic 8
Text: bflE D INTEGRATED CIRCUIT • 4fl5S7Sfl DQOOflfll 23S ■ ICS AV9173 Integrated Circuit Systems, Inc. Video Genlock PLL Features General Description • Phase-detector/VCO circuit block • Ideal for genlock system • Reference clock range 15 kHz to 1 MHz
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AV9173
AV9173-01CC8
AV9173-01CN8
AV9173-01CS8
AV9173-01
AV73-1
AV73
AV731
HSYNC GENERATE PIXEL CLOCK
video genlock pll soic 8
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT bf l E D • 4fl2S7Sfl Q00DS17 04T ■ AV9154 Integrated Circuit Systems,Inc. Low Cost 16 Pin Frequency Generator Features General Description • Com patible w ith 286,386, and 486 CPUs • G enerates u p to 6 o u tp u t clocks for CPU plus
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Q00DS17
AV9154
AV9154
AV9154-xxCN16
AV9154-xxCS16
AV9154,
AV9154-xxCxl6
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD - 2.479A 20CJQ060 2 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics If a v 20CJQ060 Units 2.0 A 60 V 385 A 0.56 V -55 to 150 °C Rectangular waveform V rrm Ifs m @ tp = 5ps sine VF @ I.OApk, T j = 125°C
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20CJQ060
20CJQ060
40HFL40S02
5S452
0D2b72fl
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Untitled
Abstract: No abstract text available
Text: '• r n RAD I ALL TECHNICAL DATA SHEET 3 GHz N LATCHING R573 023335 S.P.3T. Page 11 2 SWITCH OPTIONS : /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 -
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R573023335
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Untitled
Abstract: No abstract text available
Text: RAD I ALL '• r n TECHNICAL DATA SHEET 3 GHz N LATCHING R573 023305 S.P.3T. Page 11 2 SWITCH OPTIONS R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 0.20 dB
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R573023305
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Untitled
Abstract: No abstract text available
Text: '• r n RAD I ALL N LATCHING S.P.5T. Page 11 2 SWITCH OPTIONS : /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 5 0 -12.4GHz 50 Ohms FREQUENCY GHz V.S.W.R <= 0 - 3 8 -12.4 3 - 8 1.20 1.35 1.50 0.20 dB 0.35 dB 0.50 dB >= 80 dB
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R573122530
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Untitled
Abstract: No abstract text available
Text: '•rn R A D IA L L N LATCHING S.P.5T. Page 112 SWITCH OPTIONS : /SELF CUT-OFF/SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 5 0 -12.4GHz 50 Ohms FREQUENCY GHz V.S.W.R <= 0 - 3 8 -12.4 3 - 8 1.20 1.35 1.50 0.20 dB 0.35 dB 0.50 dB
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R573143500
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