chip resistor marking
Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Text: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm
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NRC06FxxxxTR
NRC06F10R0TR
NRC06F10R2TR
NRC06F10R5TR
NRC06F10R7TR
NRC06F11R0TR
NRC06F11R3TR
NRC06F11R5TR
NRC06F11R8TR
NRC06F12R1TR
chip resistor marking
604K-Ohm
marking 53d
marking 34x
NRC06F1273TR
511K-Ohm
NRC06F21R0TR
NRC06F20R5TR
NRC06F2000TR
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FFM107
Abstract: FFM101 FFM105 FFM102 FFM103 FFM104 FFM106
Text: LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A 1A FAST RECOVERY SMA DIODES TYPE Marking FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FF1 FF2 FF3 FF4 FF5 FF6 FF7 50 100 200 400 600 800 1000 V F V IF (A) VRRM(V) 1.3 1.0 IRMI(µA) IP8M(A) 5.0 Package Dimensions
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FFM101
FFM107
FFM102
FFM103
FFM104
FFM105
FFM106
214AC
FFM107
FFM101
FFM105
FFM102
FFM103
FFM104
FFM106
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Untitled
Abstract: No abstract text available
Text: DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TC = +25°C 7.5mΩ @ VGS = 10V 60A 11.5mΩ @ VGS = 4.5V 49A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 60V Features and Benefits • Low RDS(ON) – Ensures on State Losses Are Minimized
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DMT6008LFG
DS36680
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217a marking
Abstract: No abstract text available
Text: FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS8460
FDMS8460
217a marking
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Untitled
Abstract: No abstract text available
Text: FDMS8333 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS8333
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FDB150N10
Abstract: marking 49a
Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB150N10
FDB150N10
marking 49a
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FDP150N10
Abstract: No abstract text available
Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP150N10
O-220
FDP150N10
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Untitled
Abstract: No abstract text available
Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP150N10
O-220
FDP150N10
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pd25a
Abstract: FDMS8460
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
pd25a
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FDMS3500
Abstract: No abstract text available
Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description Max rDS on = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3500
FDMS3500
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FDMS5352
Abstract: No abstract text available
Text: FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7mΩ Features General Description Max rDS on = 6.7mΩ at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS5352
FDMS5352
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FDMS3662
Abstract: PF110F
Text: FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8mΩ Features General Description Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
FDMS3662
PF110F
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FDMS8662
Abstract: DSA007416.txt
Text: FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0mΩ Features General Description Max rDS on = 2.0mΩ at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8662
FDMS8662
DSA007416.txt
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Fairchild Power MOSFET
Abstract: FDMS3662
Text: FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8m: Features General Description Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
Fairchild Power MOSFET
FDMS3662
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Untitled
Abstract: No abstract text available
Text: FDMS3662 tm Trench N-Channel Power MOSFET 100V, 49A, 14.8m: Features General Description Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
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Untitled
Abstract: No abstract text available
Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDI150N10
O-262
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FDI150N10
Abstract: No abstract text available
Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDI150N10
O-262
FDI150N10
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fairchild top marking
Abstract: FDMS5352 marking 123a
Text: FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m: Features General Description Max rDS on = 6.7m: at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS5352
fairchild top marking
FDMS5352
marking 123a
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surface mount IRFZ44N
Abstract: AN-994 IRFZ44N IRFZ44NL IRFZ44NS IRFZ44N APPLICATION NOTE irfz44nsl
Text: PD - 9.1315A IRFZ44NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.022Ω G ID = 49A
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IRFZ44NS/L
IRFZ44NS)
IRFZ44NL)
surface mount IRFZ44N
AN-994
IRFZ44N
IRFZ44NL
IRFZ44NS
IRFZ44N APPLICATION NOTE
irfz44nsl
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Untitled
Abstract: No abstract text available
Text: FDMS8460 tm Trench N-Channel Power MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
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FDMS3500
Abstract: No abstract text available
Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3500
FDMS3500
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FDMS8460
Abstract: No abstract text available
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
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75 517
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIOOX Yes Yes f - 7/|=om p"°n| fczJW E-M ID C O M MARKING DETAIL ON TOP SU R F A C E OF SH IELD / I * = " ELECTRICAL SPECIFICATIONS <D 25°C u n less otherw ise n o ted : \ jT lki û K ) LJ \ l SOLDER SUFFIX
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100kH
100MHz.
UL60950-1
E205930
MIC24U13-5115W
75 517
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DAT02
Abstract: No abstract text available
Text: Pomona 1 0.57 14 ,4 8 8-13-99 From: OocuFACTSitm) Ph# 949-253-7438 To: 16638801932 6 :49am p. 3 of 4 Model 1661 BNC Male - One End Only - 1.06 ( 2 6 ,9 2 ) X - 60 ±.50 (± 12 ,7 0 ) " - — -i- - FEATURES: • Connector One End Only to Allow customer Modification.
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ofMIL-C39012.
RG58C/U.
1661-C-XX"
1661-C-60
02flafB8
DAT02
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