B824 transistor
Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
B824 transistor
a564 transistor
335 35K
106 16k
radial capacitor
Thomson TH 5221
transistor a564
pc 8178
T110A335J015AS
a684 transistor
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transistor a564
Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-C-39003/1
T111/T213
CSR91)
MIL-C-39003/4
CSR09)
MIL-C-39003/2
T140/T242
CSR23)
transistor a564
a564 transistor
a684 transistor
CIR 2262
transistor a684
cat 7199 ca
transistor b564
5252 f 0917
capacitor 336 35K 102
CSR 6026
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106 16k
Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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Original
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
106 16k
capacitor 226 35K 022 electrolytic
335 35K
TANTALUM capacitor 685 35K
a564 transistor
T35 diode
transistor a564
B824 transistor
a684 transistor
XC 7270
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bond wire gold
Abstract: No abstract text available
Text: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)
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OT-223C
EIA-481-1-A
Custom333-86-4
19-September
bond wire gold
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE4103 FB 1 1 4123()FB 4153()FB 1 1 1 / 4183()FB 1 / 4223()FB 1 / 4273()FB 1 1 43330FB 1 / 43930FB 1 / 4473()FB 1 / 45630FB f f 46830FB 1 / 4823()FB ff4104()FB 1 1 4124()FB / f 41540FB ff41840FB
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ECQE4103
43330FB
43930FB
45630FB
46830FB
ff4104(
41540FB
ff41840FB
46840FB
41050FB
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Untitled
Abstract: No abstract text available
Text: . T H I R DA N G L EP R O J E C T I O N ALTERATION I SS U E RATED CAP DIMENSIONS ITEM CODE ※ L ※T ※H ※ d VOLTAGE F ECQE41030T3 400VDC O . 01 1O .8 4 .4 O .6 .3 7 f / f / f / 41230T3 O . 012 4 .4 7 .5 " / 1 / 1 H / 1 / 1 f / 41530T3 O . 015 / 1
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ECQE41030T3
41230T3
41530T3
41830T3
42230T3
42730T3
43330T3
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Untitled
Abstract: No abstract text available
Text: T H I R D ANGLE PROJECTION I ALTERATION I S S U E ITEM CODE ECQE41030TZ / 1 41230TZ 41530TZ / 1 41830TZ 1 / 1 1 42230TZ 1 1 42730TZ 1 1 43330TZ 43930TZ 1 1 / 1 44730TZ 1 1 45630TZ / 1 46830TZ 1 1 48230 TZ 1 1 41040TZ 1 1 41240TZ 1 1 41540TZ 1 1 41840TZ 1 1
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ECQE41030TZ
41230TZ
41530TZ
41830TZ
42230TZ
42730TZ
43330TZ
43930TZ
44730TZ
45630TZ
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I ALTERATION I S S U E RATED ITEM CODE VOLTAGE ECQE4103 0 F 400VDC 1 1 1 1 41230F 1 1 1 1 41530F 1 1 1 1 41830F 1 1 1 42230F 1 1 1 42730F 1 1 43330F 1 1 H 1 1 43930F 1 1 1 44730F 1 1 1 45630F 1 1 1 1 46830F 1 1 1 / 48230F H 1 1 41040F
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400VDC
41230F
41530F
41830F
42230F
42730F
43330F
43930F
44730F
45630F
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C i l O N ALTERATION I S S U E RATED CAP DIMENSIONS ※H ※ d F ※ L ※T VOLTAGE ECQE4103 0 F3 400VDC O . 01 1O .3 4 .3 7 .4 O .6 1 1 1 1 1 1 41230F3 O . 012 .5 4 .4 7 1 1 1 I f 1 1 1 1 1 1 41530F3 O . 015 1 1 1 / 1 1 1 1
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41230F3
41530F3
41830F3
42230F3
42730F3
43330F3
43930F3
44730F3
45630F3
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L E PROJECTION I ALTERAT1ON I S S U E I DESCRIPT1ON Modifi cati 0n ITEM CODE IRAT~D_I CAP * VOLTAGE F ECQE4103 ( ) FZI 400VDCI 0.01 (103) 1 1 4123()FZI 1 1 10.012(123) 1 1 4153() FZ 1 1 1 1O . 015 (153) 4183 ( ( ) ) FZ 1 1 1 4223()FZI 1 1
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42730FZ
43330FZI
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UN4121
Abstract: UN4122 UN4123 UN4124 UN412X UN412Y
Text: Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits ● 3.0±0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.
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UN4121/4122/4123/4124/412X/412Y
UN4121
UN4122
UN4123
UN4124
UN412X
UN412Y
UN4121
UN4122
UN4123
UN4124
UN412X
UN412Y
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UNR4121
Abstract: UNR4122 UNR4123 UNR4124 UNR412X UNR412Y transistor 4124 marking 4123
Text: Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● UNR4121 UNR4122 UNR4123 UNR4124
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UNR4121/4122/4123/4124/412X/412Y
UN4121/4122/4123/4124/412X/412Y)
UNR4121
UNR4122
UNR4123
UNR4124
UNR412X
UNR412Y
UNR4121
UNR4122
UNR4123
UNR4124
UNR412X
UNR412Y
transistor 4124
marking 4123
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7T500
Abstract: 627T
Text: MODEL 627 T CCITT V.35 Termination Surface Mount Resistor Networks ELECTRICAL Standard Resistance Tolerance, at 25°C Operating Temperature Range Temperature Coefficient of Resistance Temperature Coefficient of Resistance Tracking Voltage Coefficient of Resistance
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250ppm/
50ppm/
100ppm/
25Vdc
7T500
EIA-481.
330mm)
7T500
627T
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EIA-PDP-100
Abstract: marking 4123 628L104
Text: MODEL 628 L R/2R Ladder .220” Small Outline Thick Film DIP Surface Mount Resistor Network ELECTRICAL Standard Resistance Range, Ohms Standard Resistance Tolerance, at 25°C Operating Temperature Range Temperature Coefficient of Resistance Maximum Operating Voltage
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100ppm/
50Vdc
057mm)
MIL-R-914
628L104
8L104
EIA-481
330mm)
EIA-PDP-100
marking 4123
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SS9013 SOT-23
Abstract: KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 1.1.1 General Purpose Transistors SOT-23 Type Transistors C ondition Device and Polarity Marking NPN KST06(1G) KST050H) KSC1623(C1X> PNP VcEO (V) lc (A) VCE lc (V) (mA) MIN 80 0.5 1 0.5 1 100 100
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OT-23
KST812M4
KST812M5
KST812M6
KST812M7
KSK211
O-92S
KSK161
KSK596
KSK30
SS9013 SOT-23
KSC1330
transistor J1x
SS9014 sot-23
KSC2880
M74040
KSC2884
Marking BA SOT89
KSP44
kst2222
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jeida dram 88 pin
Abstract: No abstract text available
Text: M T 12D88C25640 256K x 40, 512K x 20 IC DRAM CARD IC DRAM CARD 1 MEGABYTE 256K x 40, 512K x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) OPTIONS • Timing 60ns access 70ns access 80ns access PIN# MARKING -6 -7 GENERAL DESCRIPTION The MT12D88C25640 is a 1 megabyte, IC DRAM card
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12D88C25640
88-pin
xl6/18/20
x32/36/40
jeida dram 88 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: R A D I ALL Microwave components 18GHz OPTIONS : TE C H N IC A L DATA SHEET SMA N /O R573 412300 S.P.3T. Page 1/ 2 S W IT C H INDICATOR R F CHARACTERISTICS | IN U M d th U l- 3 0 - 1 8 GHz 50 Ohms WATO FREQUENCY RANGE IMPEDANCE <=| 3 | 1 V.S.W.R 0 - GO FREQUENCY GHz |
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OCR Scan
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18GHz
R573412300
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PDF
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Untitled
Abstract: No abstract text available
Text: »21 RAD I ALL 5 0 0 TERMINATED OPTIONS: TECHNICAL DATA SHEET 1 8 GHz N/0 SMA R 5 7 4 412300 S.P.3T. Page 112 SWITCH INDICATOR R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 0 - 1 8 GHz 50 Ohms any modifications judged necessary Microwave components
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R574412300
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PDF
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Untitled
Abstract: No abstract text available
Text: »21 RAD I ALL 5 0 0 TERMINATED OPTIONS: TECHNICAL DATA SHEET 1 8 GHz N/0 SMA R 5 7 4 412300 S.P.3T. Page 1 12 SWITCH INDICATOR R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 0 - 1 8 GHz 50 Ohms any modifications judged necessary Microwave components
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R574412300
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PDF
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Untitled
Abstract: No abstract text available
Text: B S |1 4112-9212 This information Is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary P ^ S ] R A D I A LL Microwave components 5 0 0 TERMINATED OPTIONS: INDICATOR R 5 7 4 412345
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18GHz
R574412345
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PDF
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Untitled
Abstract: No abstract text available
Text: R A D I ALL TE C H N IC A L DATA SHEET Microwave components 18GHz OPTIONS : SMA INDICATOR N /O R 5 7 3 412380 S.P.3T. Page 1/ 2 S W IT C H /BCD DECODER /SUPP.DIODES R F CHARACTERISTICS | INUMdth Ul- 3 0 - 1 8 GHz 50 Ohms WATO FREQUENCY RANGE IMPEDANCE V.S.W.R
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18GHz
R573412380
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PDF
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Untitled
Abstract: No abstract text available
Text: RAD I ALL 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET N/O SMA R 5 7 3 412335 S.P.3T. Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY GHz V.S.W.R <= Cjl) :3 : 0- 18 GHz : 50 Ohms o 1 NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 - 8 1 8 -12.4
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Untitled
Abstract: No abstract text available
Text: '•rn R A D IA L L 18 GHz OPTIONS TECHNICAL DATA SHEET N/0 SMA R 5 7 3 412310 S.P.3T. Page 112 SWITCH INDICATOR R F CHARACTERISTICS :3 :0 - 18 GHz :50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 1 CJ 1 00 NUMBER OF WAYS FREQUENCY RANGE
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PDF
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Untitled
Abstract: No abstract text available
Text: RAD I ALL 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET N/Q SMA I TTL DRIVE R573 412325 S.P.3T. Page 112 SWITCH /SUPP.DIODES R F CHARACTERISTICS | 3 0 - 18 GHz 50 Ohms V.S.W.R <= 0 - 3 1 OD FREQUENCY GHz Cj ü NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 8 -12.4
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