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    MARKING 3N1 Search Results

    MARKING 3N1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 3N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187

    marking 3N1

    Abstract: DMN3115UDM
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187 marking 3N1 DMN3115UDM

    DMN3115UDM

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31187 DMN3115UDM

    marking 3N1

    Abstract: DMN3115UDM
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31187 marking 3N1 DMN3115UDM

    zener 2B1

    Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 STZ8390C OD-323 zener 2B1 marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode

    zener 2B1

    Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 OD-323 zener 2B1 marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1

    zener 2B1

    Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 STZ8390C OD-323 zener 2B1 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate


    Original     		PDF DMN3115UDM AEC-Q101 J-STD-020 MIL-STD-202, DS31187

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate


    Original     		PDF DMN3115UDM AEC-Q101 J-STD-020 DS31187

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V •        ID TA = +25°C 3.2A 2.7A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN3115UDM AEC-Q101 DS31187

    Untitled

    Abstract: No abstract text available
    Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EF series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,


    Original     		PDF

    TCR2EE48

    Abstract: No abstract text available
    Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,


    Original     		PDF

    3N10L

    Abstract: 3N10L12 PG-TO263-3-2 3N10L1
    Text: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70N10S3L-12 IPI70N10S3L-12 PG-TO263-3-2 3N10L 3N10L12 3N10L1

    IPD30N10S3L

    Abstract: IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N10S3L-34 PG-TO252-3-11 3N10L34 IPD30N10S3L IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11

    3N10L34

    Abstract: No abstract text available
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mW ID 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD30N10S3L-34 PG-TO252-3-11 3N10L34 3N10L34

    3N10L34

    Abstract: IPD30N10S3L-34
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N10S3L-34 PG-TO252-3-11 PG-TO252-3-11 3N10L34 3N10L34 IPD30N10S3L-34

    3N10L26

    Abstract: No abstract text available
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD35N10S3L-26 PG-TO252-3-11 PG-TO252-3-11 3N10L26 3N10L26

    3N10L26

    Abstract: IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10
    Text: IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26.3 mW ID 35 A Features PG-TO263-3-2 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB35N10S3L-26 PG-TO263-3-2 PG-TO263-3-2 3N10L26 3N10L26 IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10

    3N10L26

    Abstract: IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mΩ ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD35N10S3L-26 PG-TO252-3-11 3N10L26 3N10L26 IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a

    3N10L26

    Abstract: D35A IPD35N10S3L-26
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD35N10S3L-26 PG-TO252-3-11 3N10L26 3N10L26 D35A IPD35N10S3L-26

    SMD-2520

    Abstract: 3N10L smd diode 104
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104

    3n1012

    Abstract: IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2
    Text: IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 11.3 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 70 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N1012 IPI70N10S3-12 3n1012 IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2

    3N74

    Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
    Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper


    OCR Scan     		PDF MIL-S-19500/390 TX3N75, TX3N76, 3N127, TX3N127 3N74-76 3N127 3N127 3N74 TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N76 3N75 JAN 3K76