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    MARKING 3F SOT-23 TRANSISTOR Search Results

    MARKING 3F SOT-23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 3F SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


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    PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    BC847B

    Abstract: BC857B BC857B 3F
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B • ■ ■ ■


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    PDF BC857B OT-23 BC847B OT-23 BC847B BC857B BC857B 3F

    BC857B

    Abstract: BC847B BC857C
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B


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    PDF BC857B OT-23 BC847B OT-23 BC857B BC847B BC857C

    BC857B

    Abstract: MARKING 3F BC847B
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B


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    PDF BC857B OT-23 BC847B OT-23 BC857B MARKING 3F BC847B

    Untitled

    Abstract: No abstract text available
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B s t c u


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    PDF BC857B OT-23 BC847B OT-23

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 OT-23 BC557 sot package sot-23 BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559

    BC557 sot-23

    Abstract: 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC856ALT1 BC857 BC857B
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 OT-23 BC557 sot-23 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC857 BC857B

    BC557

    Abstract: No abstract text available
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC557

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC857BLT1G operation of BC557 TRANSISTOR BC558 SOT-23 BC556 SOT MARKING 3E SOT23 BC557 BC856 BC856A BC857
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Rating Symbol Value Unit Collector-Emitter Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 BC856ALT1/D BC557 sot package sot-23 BC557 sot-23 BC857BLT1G operation of BC557 TRANSISTOR BC558 SOT-23 BC556 SOT MARKING 3E SOT23 BC557 BC856 BC856A BC857

    BC557 sot package sot-23

    Abstract: BC857BLT1G BC558 SOT-23 pnp transistor A1 sot-23 BC856ALT1G MARKING 3E SOT23 BC557 3e marking
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Rating 2 EMITTER Symbol Value Unit Collector-Emitter Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 BC856ALT1/D BC557 sot package sot-23 BC857BLT1G BC558 SOT-23 pnp transistor A1 sot-23 BC856ALT1G MARKING 3E SOT23 BC557 3e marking

    BC557

    Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 Temperat30 BC557 BC557 bc556 transistor BC559 BC856 on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


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    PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859

    BC857BLT1G

    Abstract: BC857CLT1G BC856BLT1G BC557 SOT23 BC856 BC856A BC856ALT1G BC857 BC857A BC857B
    Text: BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage


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    PDF BC856ALT1G BC856 BC857 BC858aws BC856ALT1/D BC857BLT1G BC857CLT1G BC856BLT1G BC557 SOT23 BC856 BC856A BC857 BC857A BC857B

    Untitled

    Abstract: No abstract text available
    Text: BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BC856ALT1G BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859

    NSVBC858

    Abstract: BC857BLT1G SBC856ALT1G SBC856BLT1G SBC857ALT1G SBC857BLT1G SBC857CLT1G bc856blt
    Text: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements


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    PDF BC856ALT1G SBC856ALT1G AEC-Q101 BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 NSVBC858 BC857BLT1G SBC856BLT1G SBC857ALT1G SBC857BLT1G SBC857CLT1G bc856blt

    Untitled

    Abstract: No abstract text available
    Text: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements


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    PDF BC856ALT1G SBC856ALT1G BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859

    BC857A BC857b difference

    Abstract: BC856 BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC857A BC857b difference BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors PNP ) 1. BASE 2. EMITTER Symbol Collector-base breakdown voltage 1.0 3. COLLECTOR 0.4 0.95 1.9 2.4 1.3 0.95 FEATURES Power dissipation


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    PDF OT-23 BC856 BC857 BC858 BC856ALT1 BC857ALT1, BC858ALT1, -10mA 100MHz

    BC856

    Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


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    PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    Untitled

    Abstract: No abstract text available
    Text: 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors BC 856ALT1, B LT1 TRANSISTOR BC8 57ALT1 , BLT1 CLT1 BC8 58ALT1 , BLT1 CLT1 PNP SOT — 23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.2 W (Tamb=25 °C) Collector current


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    PDF 856ALT1, 57ALT1 58ALT1 BC856 BC857 BC858 BC858 BC856 100MHz -10mA

    BC859B 215

    Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)


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    PDF OT-23 BC818-25 BC818-16 BCX20 MMBT4124 BCW32 BC856B BC856A MMBT2907A BC857C BC859B 215 motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23