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    MARKING 3E SOT23 BC557 Search Results

    MARKING 3E SOT23 BC557 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING 3E SOT23 BC557 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1S-6/7 BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859 LBC856ALT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G

    LBC858ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858ALT1G

    LBC856ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC856ALT1G

    LBC858CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		PDF AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC858CLT1G

    LBC858BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858BLT1G

    LBC856BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC856BLT1G

    LBC857BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC856 LBC857 LBC858, LBC859 LBC857BLT1G

    LBC857ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC857ALT1G

    LBC857CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		PDF AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC857CLT1G S-LBC857CLT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    BC557 sot-23

    Abstract: BC556 sot package sot-23 BC557 sot package sot-23 BC857A BC857b difference bc557 package sot23 BC857 sot package sot-23 mark 5c SOT-23 BC557 sot package SOT-23 3a SOT-23 3B
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V VEBO -5.0 V IC -100 mAdc


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 BC856ALT1/D BC557 sot-23 BC556 sot package sot-23 BC557 sot package sot-23 BC857A BC857b difference bc557 package sot23 BC857 sot package sot-23 mark 5c SOT-23 BC557 sot package SOT-23 3a SOT-23 3B

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858

    200v 3A schottky

    Abstract: bc557 package sot23
    Text: BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF BC856A/BLTFM120-M BC857A/B/CLT1 FM1200-M BC858A/B/C OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH 200v 3A schottky bc557 package sot23

    bc557

    Abstract: bc556 equivalent bc557 package sot23 of pnp transistor BC557 free BC557 BC556 SOT BC556 sot package sot-23 BC557 SOT23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1, LBC857AWT1, LBC858AWT1, BC856 BC857 BC858 SC-70 OT-323 bc557 bc556 equivalent bc557 package sot23 of pnp transistor BC557 free BC557 BC556 SOT BC556 sot package sot-23 BC557 SOT23

    LBC856BWT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G PNP Silicon These transistors are designed for general purpose


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, S-LBC856AWT1G, S-LBC857AWT1G, S-LBC858AWT1G, AEC-Q101 BC856 BC857 BC858 LBC856BWT1G

    LBC857CWT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G General Purpose Transistors PNP Silicon These transistors are designed for general purpose


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, S-LBC856AWT1G, S-LBC857AWT1G, S-LBC858AWT1G, BC856 BC857 BC858 LBC857CWT1G

    BC5468

    Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
    Text: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.


    OCR Scan     		PDF OT-23 350mW CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3646 GMPT3904 CMPT3906 BC5468 SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840

    BC5578

    Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484


    OCR Scan     		PDF OT-23 350mW CMPT918 2N918 CMPT2222A 2N2222A CMPT2369 2N2369 CMPT2484 2N2484 BC5578 npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p