3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
|
Original
|
Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
|
PDF
|
PD3S160
Abstract: PD3S160-7
Text: SPICE MODEL: PD3S160 NEW PRODUCT PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI ä323 Mechanical Data Features • Guard Ring Die Construction for Transient Protection · · · · · High Surge Capability Lead Free Finish, RoHS Compliant Note 1
|
Original
|
PD3S160
AEC-Q101
J-STD-020C
MIL-STD-202,
DS30899
PD3S160
PD3S160-7
|
PDF
|
PD3S160
Abstract: PD3S160-7
Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability
|
Original
|
PD3S160
AEC-Q101
J-STD-020D
MIL-STD-202,
DS30899
621-PD3S160-7
PD3S160-7
PD3S160
PD3S160-7
|
PDF
|
PD3S160
Abstract: marking code z2
Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT Please click here to visit our online spice models database. PowerDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability
|
Original
|
PD3S160
AEC-Q101
J-STD-020C
MIL-STD-202,
DS30899
PD3S160
marking code z2
|
PDF
|
J-STD-020D
Abstract: PD3S160 PD3S160-7
Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability
|
Original
|
PD3S160
AEC-Q101
J-STD-020D
DS30899
J-STD-020D
PD3S160
PD3S160-7
|
PDF
|
V = Device Code
Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
|
Original
|
MC74VHC1G04
353/SC
V = Device Code
marking code vk, sot-353
GATE MARKING CODE VX SOT23
wz 74 marking
fairchild marking codes sot-23
marking code vk, sot-363
marking code V6 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2
|
Original
|
C4D08120E
O-252-2
C4D08120E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2
|
Original
|
C4D08120E
O-252-2
C4D08120E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C4D08120A Silicon Carbide Schottky Diode Z-Rec Rectifier IF TC=135˚C = 11 A = 37 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF
|
Original
|
C4D08120A
O-220-2
C4D08120A
|
PDF
|
PD3S160-7
Abstract: PowerDI323
Text: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2
|
Original
|
PD3S160
AEC-Q101
POWERDI323
J-STD-020
MIL-STD-202,
POWERDI323
DS30899
PD3S160-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Mechanical Data Features • • • • • • • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2
|
Original
|
PD3S160
AEC-Q101
POWERDI323
J-STD-020
MIL-STD-202,
DS30899
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD3S160Q Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Product Summary VR V IF (A) 60 1.0 Features and Benefits VF MAX (V) @ +25°C 0.64 IR MAX (mA) @ +25°C 0.05 Description and Applications • Guard Ring Die Construction for Transient Protection
|
Original
|
PD3S160Q
AEC-Q101
DS36942
|
PDF
|
BAR43A
Abstract: marking db2 bar43c BAR43C
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAR43/A/C/S Features • • • Low Current Leakage. Surface Mount SOT-23 Package 200mW SCHOTTKY DIODE Case Material: Molded Plastic. UL Flammability
|
Original
|
BAR43/A/C/S
OT-23
200mW
OT-23
200mA
100mA
100uA
BAR43A
marking db2 bar43c
BAR43C
|
PDF
|
V = Device Code
Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
|
Original
|
MC74VHC1G86
353/SC
V = Device Code
vsop8 package outline
Wafer Fab Plant Codes ST
14XXX
T138A
|
PDF
|
|
|
V = Device Code
Abstract: MC74VHC1G00
Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
|
Original
|
MC74VHC1G00
353/SC
V = Device Code
|
PDF
|
PC 74 HCT 32 P
Abstract: U-046 V = Device Code
Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
|
Original
|
MC74VHC1G01
PC 74 HCT 32 P
U-046
V = Device Code
|
PDF
|
marking H5 sot 23-5
Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
|
Original
|
MC74VHC1G132
marking H5 sot 23-5
vsop8 package outline
sot 23-5 marking code H5
date code marking toshiba Nand
Wafer Fab Plant Codes ST
"package marking code" 162
marking code vt SOT 23-5
sot 23-5 marking code 162
soic 8 marking code
V = Device Code
|
PDF
|
74VHC1GT14
Abstract: ON Semiconductor marking marking h2 SOT353 SOT-353 MARKING VL marking SBN SOT23 MARKING CODE T14 SOT23 diode marking L5 sot363 marking code V6 diode marking code v6 SOT23 H2 sc88a
Text: MC74VHC1GT14 Schmitt-Trigger Inverter / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while
|
Original
|
MC74VHC1GT14
74VHC1GT14
ON Semiconductor marking
marking h2 SOT353
SOT-353 MARKING VL
marking SBN SOT23
MARKING CODE T14 SOT23
diode marking L5 sot363
marking code V6 diode
marking code v6 SOT23
H2 sc88a
|
PDF
|
V = Device Code
Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
|
Original
|
MC74VHC1G135
V = Device Code
ALPHA NEW sot YEAR DATE CODE
sot 23-5 marking code H5
marking H5 sot 23-5
|
PDF
|
V = Device Code
Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
|
Original
|
MC74VHC1G05
V = Device Code
diode Marking code v3
ALPHA NEW sot YEAR DATE CODE
051 MPC
AND8004
|
PDF
|
t08 sot-23
Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
|
Original
|
MC74VHC1GT08
t08 sot-23
ON Semiconductor marking
V = Device Code
marking L5 sot363
vk sot-363
marking codes fairchild 61
vk sot-353
on alpha year and work week
SOT-353 MARKING w5
diode Marking code v3
|
PDF
|
SOT23 "Marking Code" t04
Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
Text: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
|
Original
|
MC74VHC1GT04
SOT23 "Marking Code" t04
marking L5 sot363
marking h2 SOT353
ON Semiconductor marking
V = Device Code
sot363 marking code ca
marking 62 ON Semi
34 sot363
t04 sot 23
marking code V6 diode
|
PDF
|
marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
|
Original
|
MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
|
PDF
|
FOOTPRINT MELF
Abstract: melf Schottky glass BKC Semiconductors
Text: SD103AW thru SD103CW SOD-123 PLASTIC Applications SMD Schottky Diodes Guard ring protected schottky barrier. High current / low forward drop. Low cost intermediate alternative to 1 amp devices. Excellent protection for MOS devices. Used in small fast motor applications such as CD ROMs
|
OCR Scan
|
OD-123
SD103AW
SD103CW
DO-35
200mA
200mA,
SD103BW
SD103CW
FOOTPRINT MELF
melf Schottky glass
BKC Semiconductors
|
PDF
|
