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    MARKING 33 DIODE Search Results

    MARKING 33 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 33 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7121

    Abstract: SOD123 5h "MARKING 5H" 5H MARKING marking 5h MMSD3070 marking 33
    Text: MMSD3070 MMSD3070 Top Marking: 5H SOD123 Color Band Denotes Cathode Top Marking: 33 SOD123 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage


    Original     		PDF MMSD3070 OD123 7121 SOD123 5h "MARKING 5H" 5H MARKING marking 5h MMSD3070 marking 33

    marking da

    Abstract: CT25 Q62702-B127
    Text: Silicon Tuning Varactor ● Abrupt junction tuning diode ● Tuning range 25 V ● High figure of merit BBY 33 DA-2 Type Marking Ordering Code tape and reel BBY 33 DA-2 – Q62702-B127 Pin Configuration Package1) D Maximum Ratings Parameter Symbol Values


    Original     		PDF Q62702-B127 marking da CT25 Q62702-B127

    varactor diode parameter

    Abstract: tuning varactor CT25 Q62702-B70 BBY33
    Text: Silicon Tuning Varactor ● BBY 33 BB-2 Tuning varactor in passivated Mesa technology epitaxial design Type Marking Ordering Code Pin Configuration Package1) BBY 33 BB-2 – Q62702-B70 Cathode: black dot, heat sink C1 Maximum Ratings Parameter Symbol Values


    Original     		PDF Q62702-B70 varactor diode parameter tuning varactor CT25 Q62702-B70 BBY33

    Untitled

    Abstract: No abstract text available
    Text: MMSD3070 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 33 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM


    Original     		PDF MMSD3070 OD123

    fairchild top marking

    Abstract: MMSD3070 FAIRCHILD DIODE
    Text: MMSD3070 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 33 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM


    Original     		PDF MMSD3070 OD123 fairchild top marking MMSD3070 FAIRCHILD DIODE

    KDZ10EV

    Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
    Text: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0


    Original     		PDF 100mW 150mW 200mW KDZ10EV KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV

    7121

    Abstract: MMBD1400 MMBD1401 MMBD1403 MMBD1404 MMBD1405
    Text: Connection Diagrams 1401 3 3 29 1 1404 3 2 1 3 2 3 1403 2NC 1 2 3 1405 2 1 2 1 MARKING MMBD1401 29 MMBD1403 32 MMBD1404 33 MMBD1405 34 SOT-23 1 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM


    Original     		PDF MMBD1401 MMBD1403 MMBD1404 MMBD1405 OT-23 7121 MMBD1400

    diode power 1404

    Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
    Text: MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 2 NC 1 2 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings*


    Original     		PDF MMBD1401 OT-23 MMBD1404 MMBD1403 MMBD1405 diode power 1404 MMBD1404 MMBD1405

    Untitled

    Abstract: No abstract text available
    Text: Connection Diagrams 1401 3 3 29 1 1404 3 2 1 3 2 3 1403 2NC 1 2 3 1405 2 1 2 1 MARKING MMBD1401 29 MMBD1403 32 MMBD1404 33 MMBD1405 34 SOT-23 1 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM


    Original     		PDF MMBD1401 MMBD1403 MMBD1404 MMBD1405 OT-23

    2n603l

    Abstract: marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode
    Text: BSP603S2L Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 33 mΩ ID 5.2 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP603S2L SOT-223 Q67060-S7213 2N603L VPS05163


    Original     		PDF BSP603S2L OT-223 Q67060-S7213 VPS05163 2N603L 2n603l marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode

    VUM33-06PH

    Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)


    Original     		PDF 33-06PH VUM33-06PH 20100921b VUM33-06PH 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V

    Untitled

    Abstract: No abstract text available
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)


    Original     		PDF 33-06PH VUM33-06PH 20100921b

    Untitled

    Abstract: No abstract text available
    Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)


    Original     		PDF 33-06PH VUM33-06PH 20100611a

    diode power 1404

    Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
    Text: MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies N MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 1 2 2 NC 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode


    Original     		PDF MMBD1401 OT-23 MMBD1404 MMBD1403 MMBD1405 DO-35 OT-23 diode power 1404 MMBD1404 MMBD1405

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    DIODE 33 25

    Abstract: diode power 1404
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBD1401 OT-23 OT-23 MMBD1404 MMBD1403 MMBD1405 DIODE 33 25 diode power 1404

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    Schottky diode TO220

    Abstract: No abstract text available
    Text: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS


    Original     		PDF 0-018A 0-018A O-220 20-018AS Schottky diode TO220

    to-220 weight

    Abstract: No abstract text available
    Text: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS


    Original     		PDF 0-018A 0-018A O-220 20-018AS to-220 weight

    BBY33DA-2

    Abstract: Q62702-B127 BBY33
    Text: SIEMENS Silicon Tuning Varactor BBY 33 DA-2 • Abrupt junction tuning diode • Tuning range 25 V • High figure of merit Type Marking Ordering Code tape and reel BBY 33 DA-2 - Q62702-B127 Pin Configuration ° Package1) D W - ° EH 40700I Maximum Ratings


    OCR Scan     		PDF Q62702-B127 EH40700I 535b05 D0bb722 BBY33DA-2 BBY33DA-2 BBY33

    BCW65C

    Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P

    Q62702-B70

    Abstract: varactor diode parameter bby33 T marking varactor diode
    Text: SIEMENS Silicon Tuning Varactor BBY 33 BB-2 • Tuning varactor in passivated Mesa technology epitaxial design Type Marking BBY 33 BB-2 Ordering Code Pin Configuration Package1’ Q62702-B70 Cathode: black dot, heat sink C1 i — XI -4 EHA07001 Maximum Ratings


    OCR Scan     		PDF Q62702-B70 EHA07001 6535t a235bDS varactor diode parameter bby33 T marking varactor diode

    B 1403 N

    Abstract: No abstract text available
    Text: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol


    OCR Scan     		PDF MMBD1401 OT-23 B 1403 N

    1403

    Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
    Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.


    OCR Scan     		PDF MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325