D-68623
Abstract: DGS9-03AS
Text: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V Circuit Package A = Anode, C = Cathode , TAB = Cathode on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A C
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9-03AS
0-03A
O-220
O-220)
D-68623
DGS9-03AS
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Untitled
Abstract: No abstract text available
Text: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A A TO-252 AA 9A030AS C DGS 10-03A TO-220 AC A C A C TAB
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9-03AS
0-03A
9-03AS
9A030AS
O-252
O-220
O-220)
D-68623
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DIODE Ifavm 30 A
Abstract: 8P030AS 8P030
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings
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8-03AS
O-252AA
8P030AS
DIODE Ifavm 30 A
8P030AS
8P030
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Untitled
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
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8-03AS
8P030AS
O-252AA
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:
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60747and
DPG10I300PA
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to252aadpak
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
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8-03AS
O-252AA
8P030AS
to252aadpak
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Untitled
Abstract: No abstract text available
Text: DGS 3-03AS Advanced Technical Information IFAV = 5A VRRM = 300 V CJunction = 3.7 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 300 300 Type Marking C A TO-252 AA on product DGS 3-03AS A 3A030AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol
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3-03AS
O-252
3A030AS
Temp01
4-03AS
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Untitled
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ① IFRM
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8-03AS
O-252AA
8P030AS
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4-03AS
Abstract: No abstract text available
Text: DGS 4-03AS Advanced Technical Information IFAV = 5A VRRM = 300 V CJunction = 3.7 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 300 300 Type Marking C A TO-252 AA on product DGS 4-03AS A 3A030AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol
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4-03AS
O-252
3A030AS
Temp01
4-03AS
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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DPG10I300PA
Abstract: dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
DPG10I300PA
dpak DIODE ANODE COMMON
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DPG10I300PA
Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
DPG10I300PA
diode
t 3866
t 3866 power transistor
dpak DIODE ANODE COMMON
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20090323a
DPG10I300PA
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DPG10I300PA
Abstract: No abstract text available
Text: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:
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DPG10IM300UC
O-252
60747and
20131125a
DPG10I300PA
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Untitled
Abstract: No abstract text available
Text: DGS 3-03AS IFAV = 5A VRRM = 300 V CJunction = 3.7 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 3-03AS A 3A300AS C TO-252 AA A C TAB A Symbol Conditions Maximum Ratings VRRM/RSM
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3-03AS
3A300AS
O-252
4-03AS
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Untitled
Abstract: No abstract text available
Text: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Preliminary Data Type Marking on product DGS 17-03CS 17A30CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode
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17-03CS
36-03CS
17-03CS
17A30CS
O-252
O-263
D-68623
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10030a
Abstract: DGS9-03AS
Text: DGS 9-030AS DGS 10-030A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode A DGS 9-030AS C A DGS 10-030A Symbol C DGS 10-030A Conditions Maximum Ratings
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9-030AS
0-030A
O-220
O-220)
10030a
DGS9-03AS
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DGS17-03CS
Abstract: No abstract text available
Text: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 17-03CS 17A300AS DGSK 36-03CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode
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17-03CS
36-03CS
17A300AS
O-252
O-263
DGS17-03CS
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DGS17-03CS
Abstract: No abstract text available
Text: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 17-03CS 17A300AS DGSK 36-03CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode
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17-03CS
36-03CS
17A300AS
O-252
O-263
DGS17-03CS
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DGS9-03AS
Abstract: No abstract text available
Text: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode A DGS 9-03AS C A DGS 10-03A Symbol C DGS 10-03A Conditions Maximum Ratings VRRM/RSM
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9-03AS
0-03A
O-220
O-220)
DGS9-03AS
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DTP3200B
Abstract: DXTP03200BP5 DXTP03200BP5-13
Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W
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DXTP03200BP5
OT223;
-200V
J-STD-020
MIL-STD-202,
DS32068
DTP3200B
DXTP03200BP5
DXTP03200BP5-13
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADV AN CE I N FORM AT I ON 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXTP03200BP5
OT223;
-200V
J-STD-020
MIL-STD-202,
DS32068
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V(BR)DSS ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.6A • Low on-resistance • Fast switching speed
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DMN3024LK3
J-STD-020D
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DMN3024LK3-13
Abstract: DMN3024LK3 J-STD-020D
Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V
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DMN3024LK3
J-STD-020D
DMN3024LK3-13
DMN3024LK3
J-STD-020D
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