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    MARKING 300 DPAK Search Results

    MARKING 300 DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING 300 DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE Ifavm 30 A

    Abstract: 8P030AS 8P030
    Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings


    Original     		PDF 8-03AS O-252AA 8P030AS DIODE Ifavm 30 A 8P030AS 8P030

    Untitled

    Abstract: No abstract text available
    Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①


    Original     		PDF 8-03AS 8P030AS O-252AA

    to252aadpak

    Abstract: No abstract text available
    Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①


    Original     		PDF 8-03AS O-252AA 8P030AS to252aadpak

    Untitled

    Abstract: No abstract text available
    Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ① IFRM


    Original     		PDF 8-03AS O-252AA 8P030AS

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:


    Original     		PDF 60747and DPG10I300PA

    03866

    Abstract: 07062
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a 03866 07062

    DPG10I300PA

    Abstract: dpak DIODE ANODE COMMON
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a DPG10I300PA dpak DIODE ANODE COMMON

    DPG10I300PA

    Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a DPG10I300PA diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


    Original     		PDF 60747and 20090323a DPG10I300PA

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:


    Original     		PDF DPG10IM300UC O-252 60747and 20131125a DPG10I300PA

    ignition IGBT

    Abstract: ngb15n41 aac marking NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 1255C) NGD15N41CL NGD15N41CLT4 ignition IGBT ngb15n41 aac marking NGB15N41CLT4

    6P060AS

    Abstract: marking diode 6a
    Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak


    Original     		PDF DSEP6-06AS 6P060AS 60747and 20110915a 6P060AS marking diode 6a

    NGP15N41CL

    Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL r14525 NGD15N41CL/D NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking

    NGD15N41CL-D

    Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL r14525 NGD15N41CL/D NGD15N41CL-D NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4

    15N41CLG

    Abstract: 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D 15N41CLG 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4

    15N41cLG

    Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
    Text: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGB15N41CL, NGP15N41CL O-220 NGD15N41CL/D 15N41cLG 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4

    15N41CLG

    Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
    Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL O-220 NGD15N41CL/D 15N41CLG 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC

    15N41G

    Abstract: No abstract text available
    Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL NGD15N41CL/D 15N41G

    071 0039

    Abstract: ngb15n41 NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D 071 0039 ngb15n41 NGB15N41CLT4

    NGB15N41CLT4

    Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 NGD15N41CL/D NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 NGP15N41CL

    Untitled

    Abstract: No abstract text available
    Text: MURD320 Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state- of- the- art devices have the following features: ULTRAFAST


    Original     		PDF MURD320

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V(BR)DSS ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.6A • Low on-resistance • Fast switching speed


    Original     		PDF DMN3024LK3 J-STD-020D

    DMN3024LK3-13

    Abstract: DMN3024LK3 J-STD-020D
    Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V


    Original     		PDF DMN3024LK3 J-STD-020D DMN3024LK3-13 DMN3024LK3 J-STD-020D

    D-PAK B340

    Abstract: b320 dpak MBRD360 marking 300 DPAK MBRD320 MBRD330 MBRD330RL MBRD330T4 dc marking code dpak DPAK marking code 300
    Text: MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 MBRD320, MBRD340 and MBRD360 are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20 TO 60 VOLTS . . . designed for use as output rectifiers, free wheeling, protection


    Original     		PDF MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 MBRD340 MBRD360 D-PAK B340 b320 dpak marking 300 DPAK MBRD320 MBRD330 MBRD330RL MBRD330T4 dc marking code dpak DPAK marking code 300