PG12FBUSV
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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PG12FBUSV
PG12FBUSV
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PG12FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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PG12FBUSC
PG12FBUSC
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MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
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CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
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BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
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BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
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BC849
Abstract: BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS
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ISO/TS16949
OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
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2907 TRANSISTOR PNP
Abstract: 2907 2907 pnp 2907 pnp transistor
Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
2907 TRANSISTOR PNP
2907
2907 pnp
2907 pnp transistor
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IC marking jw
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_
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BC849
BC850
BC849B
BC849C
BC850B
100frequency
IC marking jw
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS at I At = 25°C V BR CBO VIBRJCEO V(BR)EBO Max. Device Type Marking (V ) TMPT2907A 2F 60 60 TMPT3906 2A 40 40 TMPT4403 2T 40 40 5.0 TMPT5087 2Q 50 50 _ TMPT5401 2L 160 150 5.0 TMPTA56 2G 80 80 4.0 100 NOTES: (V) v CB h FE 'c @ V CE Max. @ lc
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TMPT2907A
TMPT3906
TMPT4403
TMPT5087
TMPT5401
TMPTA56
05D433Ã
000fl33fl
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Untitled
Abstract: No abstract text available
Text: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F
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-202F
16mm2
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H12F
Abstract: ERX2S
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
H12F
ERX2S
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Untitled
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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12SWE
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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