035H
Abstract: IRFPE30 diode Marking code WT
Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC40FDPbF
O-247AC
IRFPE30
035H
IRFPE30
diode Marking code WT
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DIODE 27A
Abstract: marking 27A DIODE 035H IRFPE30 IRG4PC50UDPBF 55A TO-247AC t1624
Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC50UDPbF
O-247AC
IRFPE30
DIODE 27A
marking 27A DIODE
035H
IRFPE30
IRG4PC50UDPBF
55A TO-247AC
t1624
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035H
Abstract: IRFPE30 IRG4PC40
Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC40FDPbF
O-247AC
IRFPE30
035H
IRFPE30
IRG4PC40
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Untitled
Abstract: No abstract text available
Text: PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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4911A
IRG4PC40FDPbF
O-247AC
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035H
Abstract: IRFPE30
Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC40FDPbF
O-247AC
IRFPE30
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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4911A
IRG4PC40FDPbF
O-247AC
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IRG4PC50UDPBF
Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC50UDPbF
O-247AC
IRFPE30
IRG4PC50UDPBF
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
IRG4PC50
035H
IRFPE30
5A1000
irg4pc
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DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Abstract: IRG4PC50UDPBF power Diode 200V 10A RECTIFIER BRIDGE 25A 600V tu marking ultrafast diode 10a 400v 035H IRFPE30
Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC50UDPbF
O-247AC
IRFPE30
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
IRG4PC50UDPBF
power Diode 200V 10A
RECTIFIER BRIDGE 25A 600V
tu marking
ultrafast diode 10a 400v
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB390N15A
FDB390N15A
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FDH27N50
Abstract: No abstract text available
Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH27N50
O-247
FDH27N50
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FDB390N15A
Abstract: marking 27A DIODE
Text: FDB390N15A N-Channel PowerTrench MOSFET 150 V, 27 A, 39 mΩ Features Description • RDS on = 33.5 mΩ ( Typ.)@ VGS = 10 V, ID = 27 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDB390N15A
FDB390N15A
marking 27A DIODE
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FDB390N15A
Abstract: jc31 27a diode MOSFET 150V
Text: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mW Features Description • RDS on = 33.5mW ( Typ.)@ V GS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB390N15A
FDB390N15A
jc31
27a diode
MOSFET 150V
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marking 27A DIODE
Abstract: FDH27N50 GTO 100A 500V
Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Qg results in Simple Drive Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH27N50
O-247
marking 27A DIODE
FDH27N50
GTO 100A 500V
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B-989
Abstract: No abstract text available
Text: PD - 95447A IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5447A
IRG4BC40FPbF
O-220AB
O-220AB
TG4BC40FPbF
B-989
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035H
Abstract: IRFPE30
Text: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC40FPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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f1010
Abstract: 555 triangular wave B-989
Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40FPbF
O-220AB
O-220AB
O-220AB.
f1010
555 triangular wave
B-989
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Untitled
Abstract: No abstract text available
Text: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC40FPbF
O-247AC
O-247AC
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95447A IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5447A
IRG4BC40FPbF
O-220AB
O-220AB
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IRF6715MPbF
Abstract: IRF6715MTR1PBF IRF6715MTRPBF
Text: PD - 96117A IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET l l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V
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6117A
IRF6715MPbF
IRF6715MTRPbF
IRF6715MPbF
IRF6715MTR1PBF
IRF6715MTRPBF
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marking code 27a
Abstract: IRF6715MPbF IRF6715MTR1PBF IRF6715MTRPBF
Text: PD - 96117B IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible
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96117B
IRF6715MPbF
IRF6715MTRPbF
marking code 27a
IRF6715MPbF
IRF6715MTR1PBF
IRF6715MTRPBF
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Untitled
Abstract: No abstract text available
Text: PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible
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96117C
IRF6715MPbF
IRF6715MTRPbF
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irg4pc50wpbf
Abstract: 035H IRFPE30
Text: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter
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IRG4PC50WPbF
O-247AC
IRFPE30
irg4pc50wpbf
035H
IRFPE30
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96117C
Abstract: IRF6715MTR1PBF IRF6715MTRPBF
Text: PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible
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96117C
IRF6715MPbF
IRF6715MTRPbF
96117C
IRF6715MTR1PBF
IRF6715MTRPBF
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Untitled
Abstract: No abstract text available
Text: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter
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IRG4PC50WPbF
O-247AC
IRFPE30
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