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    MARKING 25 SOT-23 REF Search Results

    MARKING 25 SOT-23 REF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 25 SOT-23 REF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value


    Original     		PDF BSR18B OT-23 BSR18B

    BSR18B

    Abstract: No abstract text available
    Text: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value


    Original     		PDF BSR18B OT-23 BSR18B

    DIODE 33 25

    Abstract: diode power 1404
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBD1401 OT-23 OT-23 MMBD1404 MMBD1403 MMBD1405 DIODE 33 25 diode power 1404

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn

    2FK transistor

    Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    Untitled

    Abstract: No abstract text available
    Text: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF BCX20 BCX20 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V


    Original     		PDF BCX20 OT-23

    fairchild sot-23 Device Marking 2xk

    Abstract: MMBT4401K
    Text: MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4401K OT-23 MMBT4401K fairchild sot-23 Device Marking 2xk

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    MARKING 1PK

    Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
    Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT2222AK MMBT2222AK OT-23 MARKING 1PK 1PK transistor fairchild sot-23 Device Marking pc

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    2AK TRANSISTOR

    Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23 2AK TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 marking 2AK MMBT3906K 2ak

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 NPN General Purpose Amplifier • This device is designed for generalpurpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T a Symbol VCEO = 25°C unless otherwise noted


    Original     		PDF MMBT5550 OT-23 MMBT5550

    transistor 1AK

    Abstract: MMBT3904K 1ak transistor 1AK marking transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT3904K OT-23 MMBT3904K transistor 1AK 1ak transistor 1AK marking transistor

    BAR43/D95

    Abstract: marking db2 marking db2 bar43c BAR43 BAR43A BAR43C BAR43S
    Text: BAR43/A/C/S Schottky Diodes Connection Diagram MARKING SOT-23 BAR43 D95 BAR43C DB2 BAR43A DB1 BAR43S DA5 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 30 V IF AV Average Rectified Forward Current


    Original     		PDF BAR43/A/C/S OT-23 BAR43 BAR43C BAR43A BAR43S BAR43/D95 marking db2 marking db2 bar43c

    2AK TRANSISTOR

    Abstract: MMBT3906K MMBT
    Text: MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT3906K OT-23 MMBT3906K 2AK TRANSISTOR MMBT

    2xk transistor npn

    Abstract: 2xk npn transistor fairchild sot-23 Device Marking 2xk SOT-23 2xk MMBT4401K SOT-23 ASE
    Text: MMBT4401K tm NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4401K OT-23 MMBT4401K 2xk transistor npn 2xk npn transistor fairchild sot-23 Device Marking 2xk SOT-23 2xk SOT-23 ASE