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    MARKING 239 SOT Search Results

    MARKING 239 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 239 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD CODE 339

    Abstract: 339 marking code SMD transistor signetics linear package marking 80602 LM339ADT lm339n Linear Integrated Circuit Using lm339n, AC Voltage comparator circuit diagram 9336 559 70602 transistor 2N2222 SMD configuration Quad TRANSISTOR smd
    Text: INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook Philips Semiconductors 1995 Nov 27 Philips Semiconductors Product specification LM139/239/239A/339/339A /LM2901/MC3302 Quad voltage comparator


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    PDF LM139/239/239A/339/339A/LM2901/MC LM139/239/239A/339/339A /LM2901/MC3302 LM139 OT108 MC3302D-T MC3302N MC3302N LM139, TRANSISTOR SMD CODE 339 339 marking code SMD transistor signetics linear package marking 80602 LM339ADT lm339n Linear Integrated Circuit Using lm339n, AC Voltage comparator circuit diagram 9336 559 70602 transistor 2N2222 SMD configuration Quad TRANSISTOR smd

    TRANSISTOR SMD MARKING CODE 360

    Abstract: 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking
    Text: Philips Semiconductors Product specification Low power dual voltage comparator LM193/A/293/A/393/A/2903 DESCRIPTION PIN CONFIGURATION The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0mV


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    PDF LM193/A/293/A/393/A/2903 LM193 XLM2903CU XLM393CU Un9351 LM193, TRANSISTOR SMD MARKING CODE 360 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking

    IRLML2402

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω


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    PDF IRLML2402 OT-23 incorpo100 IRLML2402

    Untitled

    Abstract: No abstract text available
    Text: BSP170P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101


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    PDF BSP170P PG-SOT223 IEC61249221 H6327: 1000pcs/reel BSP170P

    bsp170p

    Abstract: No abstract text available
    Text: BSP170P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101


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    PDF BSP170P PG-SOT223 L6327: 1000pcs/reel BSP170P OT-223:

    5003N

    Abstract: No abstract text available
    Text: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while


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    PDF NIF5003N OT-223 5003N

    Untitled

    Abstract: No abstract text available
    Text: BSP 170 P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information


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    PDF PG-SOT-223 L6327: 1000pcs/reel

    BSP170

    Abstract: JESD22-A114 L6327 BSP 135 L6327
    Text: BSP 170 P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information


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    PDF PG-SOT-223 L6327: 1000pcs/reel BSP170 BSP170 JESD22-A114 L6327 BSP 135 L6327

    Untitled

    Abstract: No abstract text available
    Text: BSP 170 P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information


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    PDF PG-SOT-223 L6327: 1000pcs/reel BSP170

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency


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    PDF RZ1214B35Y OT443

    Philips LQFP MARKING CODE

    Abstract: Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES


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    PDF CGY2013G PCF5077 SA1620. CGY2013GBE OT313 Philips LQFP MARKING CODE Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING

    SC19a

    Abstract: SC19 LTE21009R BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A


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    PDF LTE21009R OT440A SCA53 127147/00/02/pp8 SC19a SC19 LTE21009R BP317

    marking RJ3 SOT23

    Abstract: SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf
    Text: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low-distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high-volume wireless applications ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)


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    PDF SMP1307 J-STD-020 marking RJ3 SOT23 SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A


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    PDF RX1214B300Y OT439

    pa sot-363

    Abstract: No abstract text available
    Text: Central" CMKSH-3T Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T type contains three 3 Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package. This ULTRAmini™ device has


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    PDF OT-363 13-November OT-363 pa sot-363

    JVs sot23

    Abstract: BAS116
    Text: SIEM EN S Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 ° °- ^ 1-EHA07002


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    PDF Q62702-A919 OT-23 1--------EHA07002 JVs sot23 BAS116

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W


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    PDF Q62702-A1050 OT-323 235bOS G12DS71

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors S chottky barrier d io d e BAT17 FEATURES D ESCRIPTIO N • Low forward voltage Planar Schottky barrier diode in a SOT23 small plastic S M D package. • Small SM D package • Low capacitance. AP PLIC A T IO N S


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    PDF BAT17 continuous900

    AMI siemens

    Abstract: No abstract text available
    Text: SIEMENS BSP 295 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 . 8 . . . 2 .0 V V) Type h 1.8 A BSP 295 50 V Type BSP 295 Ordering Code Q67000-S066 ^DS(on) Package Marking 0.3 n SOT-223 BSP 295 Tape and Reel Information


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    PDF OT-223 Q67000-S066 E6327 AMI siemens

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature


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    PDF BF998R OT143R

    MARKING 239 SOT

    Abstract: No abstract text available
    Text: Central CMKD6263DO Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • DUAL OPPOSING DO SCHOTTKY DIODES • HIGH VOLTAGE (70V) • LOW FORWARD VOLTAGE • GALVANICALLY ISOLATED DESCRIPTION: The Central Semiconductor CMKD6263DO incorporates two galvanically isolated, High Voltage, low Vp


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    PDF CMKD6263DO OT-363 CPD92 13-November OT-363 MARKING 239 SOT

    Untitled

    Abstract: No abstract text available
    Text: Central CM PTA13 CM PTA14 NPN CM PTA63 CM PTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,


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    PDF PTA13 PTA14 PTA63 PTA64 CMPTA13, CMPTA63 OT-23 100hA 100mA,

    2761 l transistor

    Abstract: transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761
    Text: TELEFUNKEN ELECTRONIC 17E D fi'îEOQ'ïb ODOTbSB M • ALG6 m S 921TS • S 923 TS r - 3i-i-r Silicon PNP Epitaxial Planar RF Transistors Applications; For telephone sets, telecommunication circuits, video driver and power stages in TV receivers and monitors and general in circuits with high supply voltage


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    PDF 921TS 15A3DIN E--07 2761 l transistor transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Darlington Transistors 32E D • flE 3 b 3 S G SIEMENS/ • • • • BCV 26 Q01bbb2 3 H SIP BCV46 SPCLi SEMICONDS For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type a B C V 26


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    PDF Q01bbb2 BCV46 Q62702-C1151 Q62702-C1153 Q62702-C1493 Q62702-C1475 3b35Q BCV26