kl4 diode
Abstract: kl3 diode kl2 diode kl2 marking kl4 transistor BAT54C KL3 DC marking 08 sot-23 BAT54 BAT54A BAT54C
Text: BAT54 SCHOTTKY DIODES SOT-23 PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Diodes FEATURES Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25 oC Parameter
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BAT54
OT-23
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100Aeliness
kl4 diode
kl3 diode
kl2 diode
kl2 marking
kl4 transistor
BAT54C KL3 DC
marking 08 sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @Ta=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
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kl4 diode
Abstract: BAT54S kl1 BAT54A kl3 diode bat54 KL4 SOT-23 bat54a sot-23 BAT54 kl3 marking KL4 kl1 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
kl4 diode
BAT54S kl1
kl3 diode
KL4 SOT-23
bat54a sot-23
BAT54 kl3
marking KL4
kl1 diode
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44
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OT-23
OT-23
BAS40/-04/-05/-06
BAS40
BAS40-06
BAS40-05
MARKING45
BAS40-04
MARKING44
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43 • BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES Power Dissipation PD : 200 mW（Tamb=25℃） BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44
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OT-23
OT-23
BAS40/-04/-05/-06
BAS40
BAS40-06
BAS40-05
BAS40-04
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
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BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
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2N7002K
Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method
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2N7002K
OT-23
2N7002K
E5 marking sot23
6 wc sot23
marking EA SOT23
E2- marking
h8 marking
sot23 marking JB
E5 Marking
Marking E5
JA MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
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BAS70-04
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marking 04 sot23
Abstract: BAS70 BAS70-04 BAS70-05 BAS70-06 marking sot23 76 diode marking 74
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low Turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
BAS70/-04/-05/-06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
marking 04 sot23
marking sot23 76
diode marking 74
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8c SOT 23
Abstract: marking 8C MMBZ5228B 8c marking 8c sot23
Text: SEMICONDUCTOR MMBZ5228B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8C No. 1 Item Marking Device Mark 8C MMBZ5228B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5228B
OT-23
8c SOT 23
marking 8C
MMBZ5228B
8c marking
8c sot23
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MMBZ5239B
Abstract: 8p sot-23
Text: SEMICONDUCTOR MMBZ5239B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8P No. 1 Item Marking Device Mark 8P MMBZ5239B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5239B
OT-23
MMBZ5239B
8p sot-23
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MMBZ5238B
Abstract: No abstract text available
Text: SEMICONDUCTOR MMBZ5238B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8N No. 1 Item Marking Device Mark 8N MMBZ5238B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5238B
OT-23
MMBZ5238B
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MMBZ5247B
Abstract: marking 8X
Text: SEMICONDUCTOR MMBZ5247B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8X No. 1 Item Marking Device Mark 8X MMBZ5247B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5247B
OT-23
MMBZ5247B
marking 8X
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MMBZ5223B
Abstract: 18C marking
Text: SEMICONDUCTOR MMBZ5223B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18C No. 1 Item Marking Device Mark 18C MMBZ5223B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5223B
OT-23
MMBZ5223B
18C marking
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18a marking sot23
Abstract: 18a sot23 marking 18A MMBZ5221B 18a marking marking 18a sot23
Text: SEMICONDUCTOR MMBZ5221B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18A No. 1 Item Marking Device Mark 18A MMBZ5221B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5221B
OT-23
18a marking sot23
18a sot23
marking 18A
MMBZ5221B
18a marking
marking 18a sot23
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LMBTA42LT1
Abstract: LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1 LMBTA43LT1 ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 1D SOT-23 3000/Tape&Reel 1D Pb-Free SOT-23 3000/Tape&Reel M1E SOT-23 3000/Tape&Reel
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LMBTA42LT1
LMBTA43LT1
OT-23
3000/Tape
LMBTA42LT1
LMBTA42LT1G
LMBTA43LT1
LMBTA43LT1G
1d sot-23
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KRC234S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC234S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NNA No. 1 Item Marking Device Mark NNA KRC234S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC234S
OT-23
R1998.
KRC234S
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MMBZ5249B
Abstract: No abstract text available
Text: SEMICONDUCTOR MMBZ5249B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8Z No. 1 Item Marking Device Mark 8Z MMBZ5249B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5249B
OT-23
MMBZ5249B
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MMBZ5243B
Abstract: No abstract text available
Text: SEMICONDUCTOR MMBZ5243B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8T No. 1 Item Marking Device Mark 8T MMBZ5243B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5243B
OT-23
MMBZ5243B
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marking 8D
Abstract: 8d sot23 MMBZ5229B MARK 8D
Text: SEMICONDUCTOR MMBZ5229B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8D No. 1 Item Marking Device Mark 8D MMBZ5229B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5229B
OT-23
marking 8D
8d sot23
MMBZ5229B
MARK 8D
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