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    MARKING 20N60A4 Search Results

    MARKING 20N60A4 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    MARKING 20N60A4 Datasheets Context Search

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    20N60A4

    Abstract: 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4
    Text: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications


    Original     		PDF HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 TA49339. O-220AB 20N60A4 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4

    20N60A4 equivalent

    Abstract: No abstract text available
    Text: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		PDF HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent