Z02W20V
Abstract: No abstract text available
Text: SEMICONDUCTOR Z02W20V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 20X No. 1 Item Marking Device Mark 20 Z02W20V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
|
Original
|
Z02W20V
OT-23
Z02W20V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
CJ2321
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
|
Original
|
OT-23
CJ2301S
OT-23
|
PDF
|
CJ2302
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
|
Original
|
OT-23
CJ2302
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 SOT-323 N-Channel 20-V D-S MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: TS2
|
Original
|
OT-323
CJ2102
OT-323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
|
Original
|
OT-23
CJ2301
OT-23
|
PDF
|
CJ2302
Abstract: MOSFET SOT-23 cj230 mosfet vgs 5v marking diode S2 sot-23 CJ2302 S2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
|
Original
|
OT-23
CJ2302
OT-23
Width300
MOSFET SOT-23
cj230
mosfet vgs 5v
marking diode S2 sot-23
CJ2302 S2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
CJ2321
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
|
Original
|
OT-23
CJ2301
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2U
|
Original
|
OT-23
CJ2302S
OT-23
|
PDF
|
CJ2301
Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
|
Original
|
OT-23
CJ2301
OT-23
cj230
MOSFET SOT-23
P-Channel TrenchFET Power MOSFET SOT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
|
Original
|
OT-23
CJ2302
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
CJ2312
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DA221 Switching Diode SOT-523 Features Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage
|
Original
|
DA221
OT-523
|
PDF
|
|
|
MBC13720 application notes
Abstract: 4-611 motorola
Text: Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz
|
Original
|
MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
OT-363
MBC13720/D
MBC13720 application notes
4-611 motorola
|
PDF
|
h 033
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5889PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere FEATURE * Small surface mounting type. SOT-23 * Low Collector-Emitter saturation voltage. .019 (0.50) .066 (1.70) .119 (3.04) MARKING .110 (2.80)
|
Original
|
CHT5889PT
OT-23)
OT-23
160Typ.
h 033
|
PDF
|
CHT5889GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5889GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere FEATURE * Small surface mounting type. SOT-23 * Low Collector-Emitter saturation voltage. .019 (0.50) .066 (1.70) .119 (3.04) MARKING .110 (2.80)
|
Original
|
CHT5889GP
OT-23)
OT-23
160Typ.
CHT5889GP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT8050PT SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * D805 * E805 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
|
Original
|
CHT8050PT
OT-23)
OT-23
|
PDF
|
CHT8050GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT8050GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * D805 * E805 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
|
Original
|
CHT8050GP
OT-23)
OT-23
CHT8050GP
|
PDF
|
marking 47 gain block sot-363
Abstract: S1239
Text: Technical Data Sheet MBC13720/D Rev. 1, 01/2002 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Scale 2:1 Package Information Plastic Package Case 419B (SOT-363) Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz
|
Original
|
MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
OT-363
marking 47 gain block sot-363
S1239
|
PDF
|
D855
Abstract: C855 transistor marking c855
Text: CHENMKO ENTERPRISE CO.,LTD CHT8550PT SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * C855 * D855 * E855 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
|
Original
|
CHT8550PT
OT-23)
OT-23
D855
C855
transistor marking c855
|
PDF
|
ZENER DIODES SOT-23
Abstract: marking 18j sot23 MARKING 8S SOT-23
Text: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28
|
OCR Scan
|
MMBZ5221BL
MMBZ5222BL
MMBZ5223BL
MMBZ5224BL
MMBZ5225BL
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
ZENER DIODES SOT-23
marking 18j sot23
MARKING 8S SOT-23
|
PDF
|
SOT-23 marking AFE
Abstract: marking code AFE CE040
Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Values Unit
|
OCR Scan
|
Q6800-A6477
OT-23
SOT-23 marking AFE
marking code AFE
CE040
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol
|
OCR Scan
|
Q6800-A6477
OT-23
fi235b05
012250e
fl235b05
|
PDF
|
