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    MARKING 1P TRANSISTOR SOT23 Search Results

    MARKING 1P TRANSISTOR SOT23 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 1P TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    kst2222a

    Abstract: No abstract text available
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		PDF KST2222A OT-23 KST2222A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    KST2222A

    Abstract: transistor kst2222a
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		PDF KST2222A OT-23 KST2222A transistor kst2222a

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    marking 1p sot23

    Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
    Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p

    Untitled

    Abstract: No abstract text available
    Text: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF FMBT2222A FMBT2222A OT-23 FMMBT2907A) -55to V50mA 500mA 100MHz 150mA

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		PDF MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225

    1P NPN

    Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		PDF MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC

    TRANSISTOR code marking 1P 3

    Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
    Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT2222A 300mW, OT-23 MIL-STD-202, TRANSISTOR code marking 1P 3 marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


    Original     		PDF MMBT2222A 300mW, OT-23 MIL-STD-202, C/10s

    sc59

    Abstract: BTN2222AN3 BTP2907AN3 on semiconductor marking code 1P
    Text: CYStech Electronics Corp. Spec. No. : C227N3 Issued Date : 2003.06.11 Revised Date : 2006.06.02 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3 Description • The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the


    Original     		PDF C227N3 BTN2222AN3 BTN2222AN3 OT-23/SC-59 BTP2907AN3 OT-23 UL94V-0 sc59 BTP2907AN3 on semiconductor marking code 1P

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-HF NPN RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic.


    Original     		PDF MMBT2222A-HF OT-23 OT-23, MIL-STD-750, QW-JTR08

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00)


    Original     		PDF MMBT2222A-G OT-23 OT-23, MIL-STD-750, Collector-B00 QW-BTR30

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T
    Text: SMD General Purpose Transistor NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original     		PDF MMBT2222A OT-23 OT-23, MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: 1P smd transistor F318 transistor smd marking NA sot-23
    Text: SMD GENERAL PURPOSE TRANSISTOR NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


    Original     		PDF MMBT2222A OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P 1P smd transistor F318 transistor smd marking NA sot-23

    MARKING CODE 1P

    Abstract: CODE 1P
    Text: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃


    Original     		PDF MMBT2222A MMBT2907A) OT-23 2002/95/EC 500mA 150mA 100MHz 150mA Jun-2009, MARKING CODE 1P CODE 1P

    TRANSISTOR 1P SOT23

    Abstract: TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23
    Text: @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF MMBT2222ALT1 OT-23 OT-23 150mA 500mA, 100MHz MMBT2222A TRANSISTOR 1P SOT23 TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO:


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 150mA 500mA, 100MHz MMBT2222A