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    MARKING 1N DIODE Search Results

    MARKING 1N DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 1N DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C456A

    Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


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    456/A 457/A 458/A 459/A LL-34 DO-35 FDLL456 FDLL456A C456A FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel


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    LMBTA13LT1G LMBTA14LT1G LMBTA13LT3G 3000/Tape LMBTA14LT3G 10000/Tape PDF

    transistor c 458

    Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND


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    456/A 457/A 458/A 459/A LL-34 DO-35 FDLL456 FDLL456A transistor c 458 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A PDF

    diode st 4148

    Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914


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    914/A/B 916/A/B LL-34 DO-35 FDLL914 FDLL914A FDLL914B FDLL916 diode st 4148 ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A PDF

    diode do35 C 4148

    Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


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    914/A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode do35 C 4148 diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914 PDF

    LL-34

    Abstract: diode 914a DC COMPONENTS 4148
    Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band


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    14A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 diode 914a DC COMPONENTS 4148 PDF

    diode 4148

    Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


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    914/A/B 916/A/B LL-34 DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode 4148 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A PDF

    diode f 4148

    Abstract: 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


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    914/A/B 916/A/B LL-34 DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode f 4148 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A PDF

    MINI-MELF DIODE green CATHODE

    Abstract: DC COMPONENTS 4148
    Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band LL-34 COLOR BAND MARKING DEVICE SOD80 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND


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    14A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 MINI-MELF DIODE green CATHODE DC COMPONENTS 4148 PDF

    diode st 4148

    Abstract: ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode 914/A/B FDLL4148
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND


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    914/A/B 916/A/B LL-34 DO-35 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode st 4148 ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode FDLL4148 PDF

    DIODE 1N4004G

    Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
    Text: 1N4001G 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    1N4001G 1N4007G DO-41, MIL-STD-202, DO-41 DIODE 1N4004G 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G PDF

    diode t 4148

    Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND


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    914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 TI 4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP


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    456/A 457/A 458/A 459/A LL-34 DO-35 LL456 LL456A PDF

    1N4448R

    Abstract: No abstract text available
    Text: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table


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    1N4148 1N914 1N4150 1N4153 1N4448 1N4606 DO-35 1N4148R 1N4448R PDF

    diode t 4148

    Abstract: diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode FDLL4148
    Text: Semiconductor' 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 L L -3 4 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


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    914/A/B 916/A/B FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BA N D 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN G RAY BLACK RED WHITE BROWN


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    914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 PDF

    diode pj 916

    Abstract: IC la 4148
    Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


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    914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode pj 916 IC la 4148 PDF

    diode t 4148

    Abstract: 914/A/B FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B 1n916b
    Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D LL914 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B F D L L 4 1 48 F D L L 44 48 1ST BAND 2ND BAND B LACK B LACK BROWN B LACK BLACK BROW N BLACK BROW N BROW N GRAY


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    914/A/B 916/A/B DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode t 4148 FDLL4148 1n916b PDF

    BD1501

    Abstract: No abstract text available
    Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B


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    1S922 BAS20 BAX16 H300A O-236AB r0-236 LL-34 O-236 DO-35 BD1501 PDF

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6 PDF

    diode 4483

    Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
    Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .


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    1N4460 1N4496 1N6485 1N6491 1N6491 diode 4483 RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471 PDF

    1N4770

    Abstract: No abstract text available
    Text: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol


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    PDF

    diode 4483

    Abstract: 1N4471
    Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.


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    1N4496 N6491 diode 4483 1N4471 PDF

    IN3155

    Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
    Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values


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    PDF