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    MARKING 1N DIODE Search Results

    MARKING 1N DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 1N DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C456A

    Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


    Original     		PDF 456/A 457/A 458/A 459/A LL-34 DO-35 FDLL456 FDLL456A C456A FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel


    Original     		PDF LMBTA13LT1G LMBTA14LT1G LMBTA13LT3G 3000/Tape LMBTA14LT3G 10000/Tape

    transistor c 458

    Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND


    Original     		PDF 456/A 457/A 458/A 459/A LL-34 DO-35 FDLL456 FDLL456A transistor c 458 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A

    diode st 4148

    Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914


    Original     		PDF 914/A/B 916/A/B LL-34 DO-35 FDLL914 FDLL914A FDLL914B FDLL916 diode st 4148 ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A

    diode do35 C 4148

    Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


    Original     		PDF 914/A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode do35 C 4148 diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914

    LL-34

    Abstract: diode 914a DC COMPONENTS 4148
    Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band


    Original     		PDF 14A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 diode 914a DC COMPONENTS 4148

    diode 4148

    Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


    Original     		PDF 914/A/B 916/A/B LL-34 DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode 4148 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A

    diode f 4148

    Abstract: 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914


    Original     		PDF 914/A/B 916/A/B LL-34 DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode f 4148 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A

    MINI-MELF DIODE green CATHODE

    Abstract: DC COMPONENTS 4148
    Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band LL-34 COLOR BAND MARKING DEVICE SOD80 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND


    Original     		PDF 14A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 MINI-MELF DIODE green CATHODE DC COMPONENTS 4148

    diode st 4148

    Abstract: ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode 914/A/B FDLL4148
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND


    Original     		PDF 914/A/B 916/A/B LL-34 DO-35 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode st 4148 ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode FDLL4148

    DIODE 1N4004G

    Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
    Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		PDF 1N4001G 1N4007G DO-41, MIL-STD-202, DO-41 DIODE 1N4004G 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G

    diode t 4148

    Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND


    OCR Scan     		PDF 914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 TI 4148

    Untitled

    Abstract: No abstract text available
    Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP


    OCR Scan     		PDF 456/A 457/A 458/A 459/A LL-34 DO-35 LL456 LL456A

    1N4448R

    Abstract: No abstract text available
    Text: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table


    OCR Scan     		PDF 1N4148 1N914 1N4150 1N4153 1N4448 1N4606 DO-35 1N4148R 1N4448R

    diode t 4148

    Abstract: diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode FDLL4148
    Text: Semiconductor' 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 L L -3 4 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


    OCR Scan     		PDF 914/A/B 916/A/B FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BA N D 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN G RAY BLACK RED WHITE BROWN


    OCR Scan     		PDF 914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448

    diode pj 916

    Abstract: IC la 4148
    Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL


    OCR Scan     		PDF 914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode pj 916 IC la 4148

    diode t 4148

    Abstract: 914/A/B FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B 1n916b
    Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D LL914 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B F D L L 4 1 48 F D L L 44 48 1ST BAND 2ND BAND B LACK B LACK BROWN B LACK BLACK BROW N BLACK BROW N BROW N GRAY


    OCR Scan     		PDF 914/A/B 916/A/B DO-35 LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B diode t 4148 FDLL4148 1n916b

    BD1501

    Abstract: No abstract text available
    Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B


    OCR Scan     		PDF 1S922 BAS20 BAX16 H300A O-236AB r0-236 LL-34 O-236 DO-35 BD1501

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


    OCR Scan     		PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6

    diode 4483

    Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
    Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .


    OCR Scan     		PDF 1N4460 1N4496 1N6485 1N6491 1N6491 diode 4483 RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471

    1N4770

    Abstract: No abstract text available
    Text: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol


    OCR Scan     		PDF

    diode 4483

    Abstract: 1N4471
    Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.


    OCR Scan     		PDF 1N4496 N6491 diode 4483 1N4471

    IN3155

    Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
    Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values


    OCR Scan     		PDF