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    MARKING 1H SOT Search Results

    MARKING 1H SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 1H SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMBTA05

    Abstract: marking 1h
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz MMBTA05 marking 1h PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz PDF

    a06 smd transistor

    Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		ISO/TS16949 OT-23 CMBTA05 CMBTA06 C-120 a06 smd transistor A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06 PDF

    A06 smd

    Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		OT-23 CMBTA05 CMBTA06 C-120 A06 smd A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06 PDF

    A06 smd transistor

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H


    Original     		OT-23 CMBTA05 CMBTA06 C-120 A06 smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transisto r Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		OT-23 CMBTA05 CMBTA06 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H


    Original     		OT-23 BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B PDF

    diode power 1404

    Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
    Text: MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 2 NC 1 2 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings*


    Original     		MMBD1401 OT-23 MMBD1404 MMBD1403 MMBD1405 diode power 1404 MMBD1404 MMBD1405 PDF

    DIODE 33 25

    Abstract: diode power 1404
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MMBD1401 OT-23 OT-23 MMBD1404 MMBD1403 MMBD1405 DIODE 33 25 diode power 1404 PDF

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A PDF

    transistor 1H Z

    Abstract: marking 1h 1H SOT23 MARKING 1H SOT transistor PB a13 marking sot23-5
    Text: MMBTA05 NPN Transistor SOT-23 Small Signal Product Features ◇Epitaxial planar die construction ◇Surface device type mounting ◇Moisture sensitivity level 1 ◇Driver Transistor ◇Pb free version and RoHS compliant ◇Green compound Halogen free with suffix "G" on


    Original     		MMBTA05 OT-23 MIL-STD-202, 260/10s 888mg MMBTA05 transistor 1H Z marking 1h 1H SOT23 MARKING 1H SOT transistor PB a13 marking sot23-5 PDF

    KST05

    Abstract: KST06
    Text: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Dissipation: PC max = 350mW • Complement to KST55/56 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KST05/06 KST05: KST06: 350mW KST55/56 OT-23 KST05 KST06 KST05 KST06 PDF

    SOT-89 marking E3

    Abstract: vishay siliconix code marking to-92 E35-E3 marking code vishay SILICONIX sot-23 TL431 R marking E3 sot89 TL431AILP SOT-23 R2B 431 sot89 marking TL431AIU-1
    Text: GS431B/TL431A/TL431 Vishay Siliconix Adjustable Precision Shunt Regulators SO-8 8 SOT-23 7 SOT-89 TO-92 3 6 5 1 1 1 2 2 3 3 2 4 S Suffix U Suffix X Suffix 1 LP Suffix 2 3 Features Description • Programmable Output Voltage to 30V The GS431B/TL431A/TL431 are 3-terminal adjustable


    Original     		GS431B/TL431A/TL431 OT-23 OT-89 GS431B: TL431A: TL431: GS431B/TL431A/TL431 OT-23 11-Jun-04 SOT-89 marking E3 vishay siliconix code marking to-92 E35-E3 marking code vishay SILICONIX sot-23 TL431 R marking E3 sot89 TL431AILP SOT-23 R2B 431 sot89 marking TL431AIU-1 PDF

    KST05

    Abstract: KST06
    Text: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC max = 350mW • Complement to KST55/56 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KST05/06 KST05: KST06: 350mW KST55/56 OT-23 KST05 KST06 KST05 KST06 PDF

    h7 sot23 diode

    Abstract: marking A82 SOT-23 marking A82 diode marking EY diode A82
    Text: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage


    Original     		BAS21 OT-23 MMBD1401 BAS21 OT-23-3 ND87Z h7 sot23 diode marking A82 SOT-23 marking A82 diode marking EY diode A82 PDF

    KST3906 samsung

    Abstract: BCW71 AG LC-1010
    Text: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP


    OCR Scan     		OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G KST3906 samsung BCW71 AG LC-1010 PDF

    KST2222A

    Abstract: No abstract text available
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking V ce ! PNP lc h FE (V) (A) (V) KST06(1G) KST56(2G) 80 0.5 1 100 50 KST05(1H) KST55(2H) 60 0.5 1 100 50 KST2907A92F)


    OCR Scan     		OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G KST2222A PDF

    B 1403 N

    Abstract: No abstract text available
    Text: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol


    OCR Scan     		MMBD1401 OT-23 B 1403 N PDF

    1403

    Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
    Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.


    OCR Scan     		MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325 PDF

    Diodes Marking K7

    Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B


    OCR Scan     		OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23 PDF

    Diodes Marking K6

    Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan     		OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING PDF

    sot-23 Marking G1

    Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0


    OCR Scan     		OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l PDF

    MARKING 1G TRANSISTOR

    Abstract: No abstract text available
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector Base Voltage Rating Unit VcBO KST05 KST06 Collector-Emltter Voltage KST05 KST06 Emitter-Base Voltage Collector Current


    OCR Scan     		KST05/06 OT-23 KST05 KST06 KSP05 MARKING 1G TRANSISTOR PDF

    MARKING 1G TRANSISTOR

    Abstract: KSP05 KST05 KST06 transistor mark 06 LC 300-S sot 23 mark BB
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T .= 2 5 °C Characteristic Rating Symbol Collector Base Voltage % Unit VcBO KST05 KST06 Collector-Emitter Voltage KST05 KST06 Emitter-Base Voltage Collector Current


    OCR Scan     		KST05/06 KST05 KST06 OT-23 KSP05 100/iA, MARKING 1G TRANSISTOR KST05 KST06 transistor mark 06 LC 300-S sot 23 mark BB PDF