MT42L32M32D2
Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks
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512Mb
MT42L32M16D1,
MT42L32M32D2,
MT42L16M32D1
09005aef84d56533
MT42L32M32D2
micron lpddr2
LPDDR2 SDRAM
LPDDR2 SDRAM micron
MT42L32M32
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm
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512Mb:
MT42L32M16D1
09005aef8467caf2
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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PDF
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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PDF
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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EN29SL160
Abstract: cFeon EN
Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all
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EN29SL160
EN29SL160
cFeon EN
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MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
MT42L16M32
MT42L16M32D
MT42L32M16D1
MT42L32M16D
PS 229
LPDDR2 PoP
LPDDR2 DRAM
LPDDR2-1066
Micron LPDDR2
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MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
7600B
Dynamic Memory Refresh Controller
LPDDR2-1066
121ball
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cFeon EN29
Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Text: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV320A
cFeon EN29
cfeon en29lv320ab
cFeon
EN29LV320A
cFeon EN
eon en29
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EN29PL032
Abstract: SA16 cFeon Flash chip
Text: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL032
EN29PL064
EN29PL032
SA16
cFeon Flash chip
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LPDDR2-1066
Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die
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MT42L64M64D2,
MT42L128M64D4,
MT42L96M64D3
240-ball
09005aef84645b7c
LPDDR2-1066
micron lpddr2
lpddr2 DQ calibration
LPDDR2 SDRAM micron
MT42L128M64D4
lpddr2
MT42L64M64D2
micron LPDDR2 X32
LPDDR2 SDRAM
mt42L128M64D
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Untitled
Abstract: No abstract text available
Text: EN29PL064/032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL064/032
PL064
PL032
48-Ball
56-Ball
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TL1451 Application note
Abstract: T1451A TL1451ACN TL1451 equivalent
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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TL1451A
SLVS024E
TL1451A
TL1451 Application note
T1451A
TL1451ACN
TL1451 equivalent
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1Feature 1A1 thru 1A7 * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction
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MIL-STD-750,
50mVp-p
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A-405
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1Feature 1A1 thru 1A7 * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction
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MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
DO-201AD
52/tape
52/tape#
A-405
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military part marking symbols triangle
Abstract: am/Uf 89
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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TL1451A
SLVS024E
military part marking symbols triangle
am/Uf 89
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TL1451ACN equivalent
Abstract: TL1451ACN TL1451ACD
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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TL1451A
SLVS024E
PMP00-062
PMP009
PMP146
TL1451AEVM-166
TL1451ACN equivalent
TL1451ACN
TL1451ACD
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EMIF06-1005M12
Abstract: JESD97 MARKING code mx stmicroelectronics
Text: EMIF06-1005M12 IPAD 6 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 12 1 Where EMI filtering in ESD sensitive equipment is required: 11 2 • LCD and CAMERA for Mobile phones 9 Computers and printers
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EMIF06-1005M12
EMIF06-1005M12
JESD97
MARKING code mx stmicroelectronics
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2A1530
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I ムI C~:;: :~c:r~:o :?níu~ I e m p er r er a n e It " . " ，a "t .u ". . ' " . "2 ~"'" ， m ゆD ， L 。 DIMENSION REMARKS 2 5 .4: 11 .0 T i l t0 1 component a n d curvature 0 1l e a d ss
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112A6830T3
2A1040T3
1/2A1240T3
2A1540T3
2A1840T3
2A1530
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MARKING code mx stmicroelectronics
Abstract: EMIF06-1502M12 JESD97 st micro date code show
Text: EMIF06-1502M12 6-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 12 1 • EMI asymmetrical I/O low-pass filter 11 2 ■ High efficiency in EMI filtering 10 ■ Very low PCB space consuming: 2.5 mm x 1.5 mm ■ Very thin package: 0.6 mm max
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EMIF06-1502M12
MARKING code mx stmicroelectronics
EMIF06-1502M12
JESD97
st micro date code show
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EMIF06-1502M12
Abstract: JESD97 MARKING code mx stmicroelectronics mark MX ST
Text: EMIF06-1502M12 IPAD 6 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 12 1 Where EMI filtering in ESD sensitive equipment is required: 11 2 • LCD & CAMERA for Mobile phones 9 Computers and printers
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EMIF06-1502M12
EMIF06-1502M12
JESD97
MARKING code mx stmicroelectronics
mark MX ST
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Untitled
Abstract: No abstract text available
Text: EMIF06-1502M12 6-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 12 1 • EMI asymmetrical I/O low-pass filter 11 2 ■ High efficiency in EMI filtering 10 ■ Very low PCB space consuming: 2.5 mm x 1.5 mm ■ Very thin package: 0.6 mm max
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EMIF06-1502M12
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0745
Abstract: F100 LKS0745 LKS1045 LKS104512 LKS1260 LKSF100 by30 2f1001 1260T
Text: INDUCTORS INDUCTORS POWER INDUCTORS INDUCTORS INDUCTORS POWER INDUCTORS POWER INDUCTORS POWER INDUCTORS SHIELDED TYPE SHIELDED TYPE INDUCTORS SHIELDED SHIELDEDTYPE TYPE SHIELDED TYPE LKS LKS FERRITECORE CORE FERRITECORE CORE FERRITE FERRITE LKS LKS FERRITE CORE
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D-25578
0745
F100
LKS0745
LKS1045
LKS104512
LKS1260
LKSF100
by30
2f1001
1260T
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bfn23
Abstract: MARKING HC MARKING 1fe 23marking
Text: PNP Silicon High-Voltage Transistor • • • • • BFN 23 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 22 NPN Type Marking
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OCR Scan
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PDF
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Q62702-F597
Q62702-F1064
bfn23
MARKING HC
MARKING 1fe
23marking
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Untitled
Abstract: No abstract text available
Text: r 4 THIS DRAWING IS U N PUB LISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - n 2 3 - LOC A LL RIGHTS RESERVED. R E V IS IO N S D IST CE 17 DESCRIPTIO N B REVISE PER ECO-11-003087 JS 1 1FEB11 JS WARRANTY LABEL D D PLUNGER & GROMMET
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OCR Scan
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PDF
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ECO-11-003087
1FEB11
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