MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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PDF
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KMA3D6N20SA
Abstract: NO1A
Text: SEMICONDUCTOR KMA3D6N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 1 A 2. Marking 2 Item Marking Description Device Mark KNC KMA3D6N20SA * Lot No. 1A 2007. 11 Week [1:1st Character, A:2nd Character] Note * Lot No. marking method
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KMA3D6N20SA
OT-23
KMA3D6N20SA
NO1A
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BC846
Abstract: No abstract text available
Text: SEMICONDUCTOR BC846 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1A 1 2 Item Marking Description Device Mark 1 BC846 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC846
OT-23
BC846
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design ideas
Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
Text: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol
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Original
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FMMT591A
-FMMT491A
D-81541
TX75248,
design ideas
FMMT591A
91A SOT23
FMMT491A
TS16949
ZETEX complementary transistor PRODUCT LINE
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PDF
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91A SOT23
Abstract: design ideas FMMT591 FMMT491A TS16949
Text: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO
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FMMT591
-FMMT491A
D-81541
TX75248,
91A SOT23
design ideas
FMMT591
FMMT491A
TS16949
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PDF
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CMBT3903
Abstract: CMBT3904
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBT3903
CMBT3904
C-120
CMBT3903
CMBT3904
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PDF
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CMBT3903
Abstract: CMBT3904 smd SA marking on IC
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT3903
CMBT3904
C-120
CMBT3903
CMBT3904
smd SA marking on IC
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PDF
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Untitled
Abstract: No abstract text available
Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3904
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3904
OT-23
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AUK Semiconductor
Abstract: No abstract text available
Text: SDB2301F Semiconductor Schottky Barrier Diode Features • Low VF : Max. 0.45V @ IF=1A • High speed switching application Ordering Information Type No. SDB2301F Marking Package Code DB5 SOT-23F Outline Dimensions unit : mm 1 3 2 3 1 2 PIN Connections 1. Anode
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SDB2301F
SDB2301F
OT-23F
KSD-2074-002
AUK Semiconductor
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PDF
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SDB2301
Abstract: 208800-1 ksd2088
Text: SDB2301 Semiconductor Schottky Barrier Diode Features • Low VF : Max. 0.45V @ IF=1A • High speed switching application Ordering Information Type No. SDB2301 Marking Package Code DB5 SOT-23 Outline Dimensions unit : mm 1 3 2 3 1 2 PIN Connections 1. Anode
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SDB2301
OT-23
KSD-2088-001
SDB2301
208800-1
ksd2088
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PDF
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ksd -402a
Abstract: ic vrm SDB2301F ksd2074
Text: SDB2301F Semiconductor Schottky Barrier Diode Features • Low VF : Max. 0.45V @ IF=1A • For switching power supply Ordering Information Type No. SDB2301F Marking Package Code DB5 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KSD-2074-000
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SDB2301F
OT-23F
KSD-2074-000
ksd -402a
ic vrm
SDB2301F
ksd2074
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H
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OT-23
BC846
BC847
BC848
BC846
BC846A
BC846B
BC847A
BC847B
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT3903
CMBT3904
C-120
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PDF
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Marking 1A
Abstract: No abstract text available
Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3904
350mW
MMBT3906
OT-23
QW-R206-012
Marking 1A
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PDF
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mmbt3904 complementary
Abstract: MMBT3904 MMBT3906 6030v
Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3904
350mW
MMBT3906
OT-23
QW-R206-012
100MHz
mmbt3904 complementary
MMBT3904
MMBT3906
6030v
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PDF
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MMBT591
Abstract: No abstract text available
Text: MMBT591 -1A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Low equivalent on-resistance A L 3 3 MARKING C B Top View 1 591 1 2 K E 2 D PACKAGE INFORMATION
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MMBT591
OT-23
-50mA,
100MHz
22-Oct-2013
MMBT591
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si2301ads
Abstract: No abstract text available
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301ADS
O-236
OT-23)
Si2301DS
08-Apr-05
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si2301
Abstract: Si2301ADS SI2301ADS SI2301DS SI2301DS 71-835 1a marking
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301ADS
O-236
OT-23)
Si2301DS
18-Jul-08
si2301
SI2301ADS SI2301DS
71-835
1a marking
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PDF
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SI2301ADS SI2301DS
Abstract: 71-835 SI2301DS Si2301ADS tjm sot23 1A marking 1A MARKING CODE
Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301ADS
O-236
OT-23)
Si2301DS
S-20617--Rev.
29-Apr-02
SI2301ADS SI2301DS
71-835
tjm sot23
1A marking
1A MARKING CODE
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91A SOT23
Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage
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FMMT591A
FMMT491A
100mA
-100mA*
-500mA*
-50mA,
100MHz
91A SOT23
FMMT591A
FMMT491A
DSA003699
91A PNP
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PDF
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smd marking 634
Abstract: smd transistor 5k smd transistor MARKING 2A sot23 FMMT634 50K MARKING SOT23 high voltage TRANSISTOR SMD 1a 9 IS920
Text: Transistors SMD Type Power Darlington Transistor FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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FMMT634
OT-23
625mW
100mA,
100MHz
500mA,
smd marking 634
smd transistor 5k
smd transistor MARKING 2A sot23
FMMT634
50K MARKING SOT23
high voltage TRANSISTOR SMD 1a 9
IS920
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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FMMT634
OT-23
625mW
100mA,
100MHz
500mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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OCR Scan
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FMMT591A
350mi2
FMMT491A
-100m
-50mA,
100MHz
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