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    MARKING 16 TRANSISTOR SOT23 Search Results

    MARKING 16 TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 16 TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL


    Original     		PDF MMBT1616/A MMBT1616 OT-23 MMBT1616A QW-R206-036 100mA

    TRANSISTOR 1616

    Abstract: No abstract text available
    Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER


    Original     		PDF MMBT1616/A MMBT1616 OT-23 MMBT1616A width10ms, QW-R206-036 TRANSISTOR 1616

    BC807

    Abstract: BC807-40 16 transistor sot23
    Text: BC807-16 BC807-25 BC807-40 SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — Ldeally suited for automatic insertion — epitaxial planar die construction — complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 OT-23 BC817) -500mA, -50mA BC807 BC807-40 16 transistor sot23

    5Cs transistor

    Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
    Text: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16


    Original     		PDF BC807. BC808. BC817. BC818. BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W 5Cs transistor 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs

    BC807-40

    Abstract: 5B1 SOT-23 BC807-16 BC807-25
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


    Original     		PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 BC807-40 5B1 SOT-23 BC807-16 BC807-25

    BC807-16

    Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
    Text: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage


    Original     		PDF BC807-16/-25/40 OT-23 Group-16 BC807-16 BC807-16LT1 BC807-25LT1 BC807-40LT1

    Untitled

    Abstract: No abstract text available
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


    Original     		PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23

    BC817 A6

    Abstract: transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B
    Text: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 Marking A6/6B/6C o ABSOLUTE MAXIMUM RATINGS Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V CBO 5.0


    Original     		PDF BC817-16/-25/40 OT-23 Group-16 BC817 A6 transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B

    bc807

    Abstract: BC807-40 BC807-40 5C BC807-16 BC807-25
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


    Original     		PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 bc807 BC807-40 BC807-40 5C BC807-16 BC807-25

    transistor BC 310

    Abstract: 6C TRANSISTOR MARKING BC817-16 BC817-25 BC817-40 A66B
    Text: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A6/6B/6C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage


    Original     		PDF BC817-16/-25/40 OT-23 Group-16 transistor BC 310 6C TRANSISTOR MARKING BC817-16 BC817-25 BC817-40 A66B

    Untitled

    Abstract: No abstract text available
    Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE * “G” Lead Pb -Free 1 2 SOT-23 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage


    Original     		PDF BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23

    16 sot 23

    Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
    Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565


    Original     		PDF OT-23 Q62702-S565 Q67000-S229 E6327 E6433 Sep-13-1996 16 sot 23 BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530

    Q62702-S565

    Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
    Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565


    Original     		PDF OT-23 Q62702-S565 Q67000-S229 E6327 E6433 Q62702-S565 E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23

    MARKING CODE SMD IC

    Abstract: PMBTA45 PBHV9050T smd transistor LL sot23
    Text: PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat BISS transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9050T O-236AB) PMBTA45. AEC-Q101 PBHV9050T MARKING CODE SMD IC PMBTA45 smd transistor LL sot23

    BF747

    Abstract: MBB400 sot23-4 marking a1
    Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.


    Original     		PDF BF747 BF747 MBB400 sot23-4 marking a1

    bf547 philips

    Abstract: BF547 B12 IC marking code marking code 604 SOT23
    Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation


    Original     		PDF BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530A BFU530A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550A BFU550A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520A BFU520A AEC-Q101

    MBB262

    Abstract: MBB255 MCD089
    Text: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure


    Original     		PDF BFR93AR BFT93. BFR93AR 771-BFR93AR215 MBB262 MBB255 MCD089

    Untitled

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features


    Original     		PDF STWD100 OT23-5 SC70-5, OT323-5 OT23-5, SC70-5 OT323-5) STWD100NWWY3F OT23-5L DocID014134

    BFR91A

    Abstract: S parameters of BFR93AR GHz transistor BFR93AR BFT93 IMD2 transistor
    Text: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure


    Original     		PDF BFR93AR BFT93. 30nitions BFR93AR BFR91A S parameters of BFR93AR GHz transistor BFT93 IMD2 transistor

    Untitled

    Abstract: No abstract text available
    Text: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131


    OCR Scan     		PDF OT-23 Q62702-S565 Q67000-S229 E6327 E6433 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã

    MAM25S

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.


    OCR Scan     		PDF PMBT5550 PMBT5401. MAM25S MAM25S