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    MARKING 122 TOSHIBA Search Results

    MARKING 122 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 122 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20


    Original     		PDF SSM6L40TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    SSM6P47NU

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU High-Speed Switching Applications Power Management Switch Applications Unit: mm 2.0±0.1 B A 2.0±0.1 1.5V drive Low ON-resistance:Ron = 242 mΩ (max) (@VGS = -1.5 V)


    Original     		PDF SSM6P47NU SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V DC ID 1.6


    Original     		PDF SSM6L40TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V


    Original     		PDF SSM6L40TU

    SSM6L40TU

    Abstract: SSM6L40
    Text: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V


    Original     		PDF SSM6L40TU SSM6L40TU SSM6L40

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 k3374 2SK3374

    Untitled

    Abstract: No abstract text available
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 2.1±0.1 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage


    Original     		PDF SSM6N40TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 6 2 5 3 4 Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage


    Original     		PDF SSM6J53FE

    k3472

    Abstract: 2SK3472 MJ103
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 k3472 2SK3472 MJ103

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		PDF 2SK3374 k3374 2SK3374

    SSM6J53FE

    Abstract: No abstract text available
    Text: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 6 2 5 3 4 Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage


    Original     		PDF SSM6J53FE SSM6J53FE

    7WU04F

    Abstract: No abstract text available
    Text: TOSHIBA TC7WU04F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7WU04F, TC7WU04FU 3 INVERTER The TC7W U04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation sim ilar to equivalent


    OCR Scan     		PDF TC7WU04F/FU TC7WU04F, TC7WU04FU 7WU04F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz


    OCR Scan     		PDF 2SC4322 IS21ei2

    7WU04F

    Abstract: 7wu04 TC7WU04FU TC7WU04 TC7WU04F
    Text: TOSHIBA TC7WU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WU04F, TC7WU04FU 3 INVERTER The TC7WU04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent


    OCR Scan     		PDF TC7WU04F/FU TC7WU04F, TC7WU04FU TC7WU04 TC7WU04F 7WU04F 7wu04 TC7WU04FU TC7WU04F

    S2V 97

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 49 6 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2496 12GHz) 12GHz S2V 97

    transistor c 3228

    Abstract: 2SK2496 2SK24
    Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.9dB f=12GHz • High Gain Unit in mm 2.16±0.2 : Ga = lld B (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2496 12GHz) 12GHz transistor c 3228 2SK2496 2SK24

    Marking H2

    Abstract: 3SK257
    Text: TO SH IBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low N oise Figure : NF = 2.0dB Typ.


    OCR Scan     		PDF 3SK257 Marking H2 3SK257

    transistor c 3228

    Abstract: transistor a 1837 2SK2496
    Text: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) 2 .1 6 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2496 12GHz) 12GHz transistor c 3228 transistor a 1837 2SK2496