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    MARKING 02 NPN Search Results

    MARKING 02 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 02 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    609 transistor

    Abstract: No abstract text available
    Text: DTD123TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD123TK (SMT3) 29*02 package marking: DTD123TK; F02 a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		DTD123TK SC-59) DTD123TK; DTD123TK 609 transistor PDF

    marking bt5

    Abstract: No abstract text available
    Text: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration


    OCR Scan     		47Kfl) Q62702-C2417 BCR148S r998-11-01 6235bQ5 01207bb 0E35b05 marking bt5 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMD2N Transistor, digitai, dual, NPN IM D 2 A and Features Dimensions U nits: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages package marking: UMD2N and IMD2A; 02 package contains a PNP (DTA124EKA) and an NPN (DTC124EKA) digital transistor, each


    OCR Scan     		SC-74) DTA124EKA) DTC124EKA) SC-70) SC-59) PDF

    marking 65B

    Abstract: BCW65B BCW65A BCW65C
    Text: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _


    OCR Scan     		BCW65A, BCW65B BCW65C BCW65A BCW65B marking 65B BCW65A BCW65C PDF

    max6032

    Abstract: BCW65B BCW65C BCW65A
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89


    OCR Scan     		BCW65A, BCW65B BCW65C BCW65A BCW65B BCW65A 35-Vce max6032 BCW65C PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N-P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 038 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.89" 2 .00 _ 0.60 0.40


    OCR Scan     		CMBTA05 CMBTA06 PDF

    N5089

    Abstract: N5088 ksp-65
    Text: TRANSISTORS FUNCTION GUIDE 1.2 LOW Noise Transistors 1.2.1 SOT-23 Typ« Transistors NF dB Device and Polarity {Marking) hFE Condition Condition VcEO lc V« Condition Max Frequency (V) (A) (V) MIN MAX (mA) Ib (mA) KST6428(1K) 4 Audio 50 02 5 0.1 250 650 100


    OCR Scan     		OT-23 KST6428 KST2484 KST5086 KST5088 KST5087 KST5089 O-92S N5089 N5088 ksp-65 PDF

    marking CJD

    Abstract: A6 marking MRF947t1 marking 6B
    Text: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5


    OCR Scan     		SC-70/SQT-323 MRF947T1 MRF947BT1 MRF957T1 MUN5211T1 MUNS212T1 MUN5213T1 MUN5214T1 MUN5111T1 MUN5112T1 marking CJD A6 marking marking 6B PDF

    W83778

    Abstract: xd card flash controller 2001 gp74 joystick PS2 W83697SF MOA2 MOB2 ISO7816 PC99 RECS-80
    Text: W83697SF WINBOND I/O W83697SF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 04/16/01 0.50 0.50 First published 2 111 04/27/01 0.51 0.51 Update the Top Marking 12/16/02 1.0 1.0 3 New Update 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All the


    Original     		W83697SF W83697SF 697SD4 697SF 697SD5 W83778 xd card flash controller 2001 gp74 joystick PS2 MOA2 MOB2 ISO7816 PC99 RECS-80 PDF

    PN3906 TRANSISTOR PNP

    Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
    Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92


    Original     		SPT/TO-92 SPTTO-92 llU--800 loo250-700 loo--300 lOO-60( 250-63t loo05 loo56 UMT3906 PN3906 TRANSISTOR PNP 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A PDF

    L78 H

    Abstract: No abstract text available
    Text: Centrai CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package with enhanced specifications


    OCR Scan     		CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E: CMLT5087E: CMLT5088E: OT-563 L78 H PDF

    kap 35

    Abstract: No abstract text available
    Text: MMDT3904V ADVANCE INFORMATION DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free Plating A C1 · · · · · · ·


    Original     		MMDT3904V OT-563 OT-563, J-STD-020A MIL-STD-202, kap 35 PDF

    transistor k88

    Abstract: transistor k87 transistor NF marking code k88 transistor PNP TRANSISTOR SOT363 NPN Silicon Surface Mount Transistors transistor marking code HF
    Text: Central" CMKT5078 NPN/PNP CMKT5087 PNP/PNP CMKT5088 NPN/NPN Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON DUAL TRANSISTORS FEATURES: • ULTRAmini™ SPACE SAVING PACKAGE. • TWO NPN 5088 or TWO PNP (5087) TRANSISTORS IN A SINGLE PACKAGE. • COMPLEMENTARY, ONE NPN (5088) AND


    OCR Scan     		CMKT5078 CMKT5087 CMKT5088 CMKT5087) CMKT5088 CMKT5087 CMKT5078 OT-363 transistor k88 transistor k87 transistor NF marking code k88 transistor PNP TRANSISTOR SOT363 NPN Silicon Surface Mount Transistors transistor marking code HF PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT3904 List List. 1 Package outline. 2


    Original     		FMBT3904 225mW 1000hrs 15min) 15min 20sec 1000cycle 96hrs PDF

    FMBT5550

    Abstract: oc 140 npn transistor
    Text: Formosa MS High Voltage NPN Epitaxial Planar Transistor FMBT5550 / FMBT5551 List List. 1 Package outline. 2


    Original     		FMBT5550 FMBT5551 120sec 260sec 30sec DS-231108 oc 140 npn transistor PDF

    Formosa MS

    Abstract: TRANSISTOR C 2026
    Text: NPN Transistor Formosa MS FMBT2222 / FMBT2222A List List. 1 Package outline. 2 Features. 2


    Original     		FMBT2222 FMBT2222A 120sec 260sec 30sec DS-231107 Formosa MS TRANSISTOR C 2026 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT2907V ADVANCE INFORMAITON DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT2222V Ultra-Small Surface Mount Package Lead Free Plating A C1 · · · · · · · E1


    Original     		MMDT2907V MMDT2222V) OT-563 OT-563, J-STD-020A MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN Epitaxial Planar Transistor Formosa MS FMBT3904W List List. 1 Package outline. 2


    Original     		FMBT3904W 150mW 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT2222V ADVANCE INFORMATION DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907V Ultra-Small Surface Mount Package Lead Free Plating A C1 · · · · · · · KAT YM


    Original     		MMDT2222V MMDT2907V) OT-563 OT-563, J-STD-020A MIL-STD-202, PDF

    PB8110

    Abstract: PBSS8110Z PBSS9110Z SC-73
    Text: PBSS8110Z 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS8110Z OT223 SC-73) PBSS9110Z. PBSS8110Z PB8110 PBSS9110Z SC-73 PDF

    PB8110

    Abstract: PBSS8110Z
    Text: PBSS8110Z 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS8110Z OT223 SC-73) PBSS9110Z. PBSS8110Z 771-PBSS8110Z135 PB8110 PDF

    BFP196TW

    Abstract: No abstract text available
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		BFP196T/BFP196TR/BFP196TW BFP196T BFP196TR 1363t D-74025 BFP196TW PDF

    PDTA144

    Abstract: PDTC144V
    Text: PDTC144VT NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Rev. 02 — 11 May 2004 Objective data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistor. PNP complement: PDTA144VT. 1.2 Features • Built-in bias resistors


    Original     		PDTC144VT PDTA144VT. PDTA144 PDTC144V PDF

    PDTA144

    Abstract: PDTA144VT PDTC144VT PDTC144V
    Text: PDTA144VT PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Rev. 02 — 14 May 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. NPN complement: PDTC144VT. 1.2 Features • Built-in bias resistors


    Original     		PDTA144VT PDTC144VT. PDTA144 PDTA144VT PDTC144VT PDTC144V PDF