TLOM1108
Abstract: TLYM1108 750HS ST-100S TLOM1108T11
Text: TL RM,RMM,SM,OM,YM 1108(T11) TOSHIBA LED Lamps TLRM1108(T11), TLRMM1108(T11), TLSM1108(T11), TLOM1108(T11), TLYM1108(T11) Panel Circuit Indicator Unit: mm Cathode mark • Surface-mount device • 3.2 (L) mm x 2.9 (W) mm × 1.9 (H) mm • InGaAℓP LEDs •
|
Original
|
TLRM1108
TLRMM1108
TLSM1108
TLOM1108
TLYM1108
2000/reel)
TLRM1108
TLRMM1108
TLOM1108
750HS
ST-100S
TLOM1108T11
|
PDF
|
hvm17wa
Abstract: Hitachi DSA001652
Text: HVM17WA Variable Capacitance Diode for VCO ADE-208-246 Z Rev. 0 May. 1994 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.
|
Original
|
HVM17WA
ADE-208-246
50min)
SC-59A
hvm17wa
Hitachi DSA001652
|
PDF
|
HVM17
Abstract: HVM17WA SC-59A Hitachi DSA00497
Text: ADE-208-087B Z HVM17 Variable Capacitance Diode for FM tuner Preliminary Rev. 2 May. 1993 Features • • • • Pin Arrangement Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q=50 min) MPAK package is suitable for high density
|
Original
|
ADE-208-087B
HVM17
HVM17WA
SC-59A
HVM17
HVM17WA
SC-59A
Hitachi DSA00497
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.
|
Original
|
PD23C32202L
32M-BIT
16-BIT
32-BIT
PD23C32202L
86-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.
|
Original
|
PD23C64202L
64M-BIT
16-BIT
32-BIT
PD23C64202L
86-pin
|
PDF
|
tas t23
Abstract: QA1 power amplifier
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.
|
Original
|
PD23C64202L
64M-BIT
16-BIT
32-BIT
PD23C64202L
86-pin
tas t23
QA1 power amplifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAMs organized as 524,288-word X 16-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
|
Original
|
VG3617161BT
288-word
16-bit
166MHz/143MHz
1G5-0131
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA
|
Original
|
TLN1108
18mW/sr
100mA
100mA
|
PDF
|
rba 016
Abstract: dba1 VG3617161BT
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161BT
VG3617161BT
288-word
16-bit
50-pin
200MHz,
183MHz,
166MHz,
143MHz,
125MHz
rba 016
dba1
|
PDF
|
tas t23
Abstract: No abstract text available
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161BT
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz,
100MHz
Ia0344
tas t23
|
PDF
|
MOSFET A13
Abstract: lbaa MIC2514BM5 78204 High-Side MOSFET Driver TO263 mark code A11 sot markings MOSFET driver SOT LAXX MIC7211BM5
Text: Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Part Number Speed /Bonding Option only used when required Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Screening Option (None) = Industrial B = Class B S = Class S
|
Original
|
1x104
OT-23-5
O-220
O-247
OT-23
OT-223
O-263
OT-143
150mA
MOSFET A13
lbaa
MIC2514BM5
78204
High-Side MOSFET Driver
TO263 mark code A11
sot markings
MOSFET driver SOT
LAXX
MIC7211BM5
|
PDF
|
LGAA
Abstract: mark A15 sot-23-6 MIC5219BM5 LGAA A12A LDXX WM Mark code negative VOLTAGE REGULATOR sot 23-6 A16 SOT
Text: You are in Databook Vol. 1 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required
|
Original
|
1x104
SC70-5
OT-23
OT-23-6
OT-223
O-263
OT-143
O-247
OT-23-5
O-220
LGAA
mark A15 sot-23-6
MIC5219BM5 LGAA
A12A
LDXX
WM Mark code
negative VOLTAGE REGULATOR sot 23-6
A16 SOT
|
PDF
|
eltek flatpack
Abstract: mosfet 407 sot-23-5 op amp or regulator mark A15 sot-23-6 LBAA sot-23 M6 negative VOLTAGE REGULATOR sot 23-6 SOT23 m6 sot-23-5 a13
Text: You are in Databook Vol. 3 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required
|
Original
|
1x104
SC70-5
OT-23
OT-23-6
OT-223
O-263
OT-143
O-247
OT-23-5
O-220
eltek flatpack
mosfet 407
sot-23-5 op amp or regulator
mark A15 sot-23-6
LBAA
sot-23 M6
negative VOLTAGE REGULATOR sot 23-6
SOT23 m6
sot-23-5 a13
|
PDF
|
a13 marking sot235
Abstract: LBAA marking code mark A15 sot-23-6 voltage regulator marking code LGAA MARKING A11 SOT-23-6 lbaa marking A13, SOT-23-5 MICREL MIC marking sot-23-5 op amp or regulator
Text: Part Identification and Marking Packaged Devices MIC xxxx -01 A E B Micrel or Standard Prefix Q Qualification Option Q = Class B or S Part Number Option as required Temperature A = –55°C to +125°C B = –40°C to +85°C C = 0°C to +70°C C5 = SC70-5 MM = MSOP MM8
|
Original
|
SC70-5
OT-23-5
OT-223
OT-23
OT-23-6
O-263
O-247
OT-143
O-220
MIC94030BM4
a13 marking sot235
LBAA marking code
mark A15 sot-23-6
voltage regulator marking code
LGAA
MARKING A11 SOT-23-6
lbaa
marking A13, SOT-23-5
MICREL MIC marking
sot-23-5 op amp or regulator
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161BT
288-word
16-bit
50-pin
143MHz
111MHz
125MHz
100Mhz
|
PDF
|
dba1
Abstract: VG3617161DT
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161DT
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
dba1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
|
Original
|
VG3617161BT
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz,
100MHz
Ia0344
|
PDF
|
Vixel Corporation
Abstract: No abstract text available
Text: Vixel 5100 V-GLM For Reliable High-Speed Performance in All Fibre Channel Configurations Whether your applications demand high I/O operations per second or pure throughput, the new Vixel 5100 Gigabaud Link Module GLM assures superior optical performance and greater
|
Original
|
Fibre16
OE1063SW
Vixel Corporation
|
PDF
|
MARKING CODE QA1
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.
|
Original
|
PD23C32202L
32M-BIT
16-BIT
32-BIT
PD23C32202L
86-pin
MARKING CODE QA1
|
PDF
|
vs237
Abstract: Winbond Electronics vs180 VS236 vs133 VS232 WFP6530B 60-1600 VS148 D15D
Text: WFP6530B Advanced Product Information 1. PRODUCT DESCRIPTION COG Signal Driver The WFP6530B is a 6-bit, 240-channel signal driver designed for SVGA chip-on-glass COG TFT-LCDs. The WFP6530B’s minimum form factor and optimized COG layout permit the design of
|
Original
|
WFP6530B
WFP6530B
240-channel
240-Channel,
WFP6540
D1-D14
vs237
Winbond Electronics
vs180
VS236
vs133
VS232
60-1600
VS148
D15D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HVM17WA Variable Capacitance Diode for VCO HITACHI ADE-208-246 Z Rev. 0 May. 1994 Features • Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. (Q = 50min) • MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HVM17WA
ADE-208-246
50min)
10MHz
200pF,
100nA
|
PDF
|
rkm 34 transistor
Abstract: RKM 24 sm transistor rkm 21 transistor diode t95 mark J5 SOT-89 CRB20 T95 Diode sot36 rkm 45 transistor TS11
Text: Packing Monolithic ICs P ackage SOP QFP 2 Taping package SOP8 - 28 pin) P ackaging type Tube A rranged in pla stic tu b e s (antistatic treated) Taping (8 - 28 pins only) SOP ICs adh e re d to a tape and w ound on a reel Pallet H oused in individual cells on stacked
|
OCR Scan
|
20pin
24pin
28pin
4x280
5x400
QFP32.
44pin
SQFP56pin
QFP64,
80pin
rkm 34 transistor
RKM 24 sm transistor
rkm 21 transistor
diode t95
mark J5 SOT-89
CRB20
T95 Diode
sot36
rkm 45 transistor
TS11
|
PDF
|