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    MARK T11 AD Search Results

    MARK T11 AD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARK T11 AD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TLOM1108

    Abstract: TLYM1108 750HS ST-100S TLOM1108T11
    Text: TL RM,RMM,SM,OM,YM 1108(T11) TOSHIBA LED Lamps TLRM1108(T11), TLRMM1108(T11), TLSM1108(T11), TLOM1108(T11), TLYM1108(T11) Panel Circuit Indicator Unit: mm Cathode mark • Surface-mount device • 3.2 (L) mm x 2.9 (W) mm × 1.9 (H) mm • InGaAℓP LEDs •


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    TLRM1108 TLRMM1108 TLSM1108 TLOM1108 TLYM1108 2000/reel) TLRM1108 TLRMM1108 TLOM1108 750HS ST-100S TLOM1108T11 PDF

    hvm17wa

    Abstract: Hitachi DSA001652
    Text: HVM17WA Variable Capacitance Diode for VCO ADE-208-246 Z Rev. 0 May. 1994 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.


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    HVM17WA ADE-208-246 50min) SC-59A hvm17wa Hitachi DSA001652 PDF

    HVM17

    Abstract: HVM17WA SC-59A Hitachi DSA00497
    Text: ADE-208-087B Z HVM17 Variable Capacitance Diode for FM tuner Preliminary Rev. 2 May. 1993 Features • • • • Pin Arrangement Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q=50 min) MPAK package is suitable for high density


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    ADE-208-087B HVM17 HVM17WA SC-59A HVM17 HVM17WA SC-59A Hitachi DSA00497 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.


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    PD23C32202L 32M-BIT 16-BIT 32-BIT PD23C32202L 86-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.


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    PD23C64202L 64M-BIT 16-BIT 32-BIT PD23C64202L 86-pin PDF

    tas t23

    Abstract: QA1 power amplifier
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.


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    PD23C64202L 64M-BIT 16-BIT 32-BIT PD23C64202L 86-pin tas t23 QA1 power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAMs organized as 524,288-word X 16-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.


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    VG3617161BT 288-word 16-bit 166MHz/143MHz 1G5-0131 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA


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    TLN1108 18mW/sr 100mA 100mA PDF

    rba 016

    Abstract: dba1 VG3617161BT
    Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161BT VG3617161BT 288-word 16-bit 50-pin 200MHz, 183MHz, 166MHz, 143MHz, 125MHz rba 016 dba1 PDF

    tas t23

    Abstract: No abstract text available
    Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161BT 288-word 16-bit 50-pin 166MHz, 143MHz, 125MHz, 100MHz Ia0344 tas t23 PDF

    MOSFET A13

    Abstract: lbaa MIC2514BM5 78204 High-Side MOSFET Driver TO263 mark code A11 sot markings MOSFET driver SOT LAXX MIC7211BM5
    Text: Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Part Number Speed /Bonding Option only used when required Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Screening Option (None) = Industrial B = Class B S = Class S


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    1x104 OT-23-5 O-220 O-247 OT-23 OT-223 O-263 OT-143 150mA MOSFET A13 lbaa MIC2514BM5 78204 High-Side MOSFET Driver TO263 mark code A11 sot markings MOSFET driver SOT LAXX MIC7211BM5 PDF

    LGAA

    Abstract: mark A15 sot-23-6 MIC5219BM5 LGAA A12A LDXX WM Mark code negative VOLTAGE REGULATOR sot 23-6 A16 SOT
    Text: You are in Databook Vol. 1 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required


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    1x104 SC70-5 OT-23 OT-23-6 OT-223 O-263 OT-143 O-247 OT-23-5 O-220 LGAA mark A15 sot-23-6 MIC5219BM5 LGAA A12A LDXX WM Mark code negative VOLTAGE REGULATOR sot 23-6 A16 SOT PDF

    eltek flatpack

    Abstract: mosfet 407 sot-23-5 op amp or regulator mark A15 sot-23-6 LBAA sot-23 M6 negative VOLTAGE REGULATOR sot 23-6 SOT23 m6 sot-23-5 a13
    Text: You are in Databook Vol. 3 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required


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    1x104 SC70-5 OT-23 OT-23-6 OT-223 O-263 OT-143 O-247 OT-23-5 O-220 eltek flatpack mosfet 407 sot-23-5 op amp or regulator mark A15 sot-23-6 LBAA sot-23 M6 negative VOLTAGE REGULATOR sot 23-6 SOT23 m6 sot-23-5 a13 PDF

    a13 marking sot235

    Abstract: LBAA marking code mark A15 sot-23-6 voltage regulator marking code LGAA MARKING A11 SOT-23-6 lbaa marking A13, SOT-23-5 MICREL MIC marking sot-23-5 op amp or regulator
    Text: Part Identification and Marking Packaged Devices MIC xxxx -01 A E B Micrel or Standard Prefix Q Qualification Option Q = Class B or S Part Number Option as required Temperature A = –55°C to +125°C B = –40°C to +85°C C = 0°C to +70°C C5 = SC70-5 MM = MSOP MM8


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    SC70-5 OT-23-5 OT-223 OT-23 OT-23-6 O-263 O-247 OT-143 O-220 MIC94030BM4 a13 marking sot235 LBAA marking code mark A15 sot-23-6 voltage regulator marking code LGAA MARKING A11 SOT-23-6 lbaa marking A13, SOT-23-5 MICREL MIC marking sot-23-5 op amp or regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161DT 288-word 16-bit 50-pin 250MHz, 200MHz, 183MHz, 166MHz, 143MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161DT 288-word 16-bit 50-pin 250MHz, 200MHz, 183MHz, 166MHz, 143MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161BT 288-word 16-bit 50-pin 143MHz 111MHz 125MHz 100Mhz PDF

    dba1

    Abstract: VG3617161DT
    Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161DT VG3617161DT 288-word 16-bit 50-pin 250MHz, 200MHz, 183MHz, 166MHz, 143MHz, dba1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


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    VG3617161BT 288-word 16-bit 50-pin 166MHz, 143MHz, 125MHz, 100MHz Ia0344 PDF

    Vixel Corporation

    Abstract: No abstract text available
    Text: Vixel 5100 V-GLM For Reliable High-Speed Performance in All Fibre Channel Configurations Whether your applications demand high I/O operations per second or pure throughput, the new Vixel 5100 Gigabaud Link Module GLM assures superior optical performance and greater


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    Fibre16 OE1063SW Vixel Corporation PDF

    MARKING CODE QA1

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.


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    PD23C32202L 32M-BIT 16-BIT 32-BIT PD23C32202L 86-pin MARKING CODE QA1 PDF

    vs237

    Abstract: Winbond Electronics vs180 VS236 vs133 VS232 WFP6530B 60-1600 VS148 D15D
    Text: WFP6530B Advanced Product Information 1. PRODUCT DESCRIPTION COG Signal Driver The WFP6530B is a 6-bit, 240-channel signal driver designed for SVGA chip-on-glass COG TFT-LCDs. The WFP6530B’s minimum form factor and optimized COG layout permit the design of


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    WFP6530B WFP6530B 240-channel 240-Channel, WFP6540 D1-D14 vs237 Winbond Electronics vs180 VS236 vs133 VS232 60-1600 VS148 D15D PDF

    Untitled

    Abstract: No abstract text available
    Text: HVM17WA Variable Capacitance Diode for VCO HITACHI ADE-208-246 Z Rev. 0 May. 1994 Features • Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. (Q = 50min) • MPAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan
    HVM17WA ADE-208-246 50min) 10MHz 200pF, 100nA PDF

    rkm 34 transistor

    Abstract: RKM 24 sm transistor rkm 21 transistor diode t95 mark J5 SOT-89 CRB20 T95 Diode sot36 rkm 45 transistor TS11
    Text: Packing Monolithic ICs P ackage SOP QFP 2 Taping package SOP8 - 28 pin) P ackaging type Tube A rranged in pla stic tu b e s (antistatic treated) Taping (8 - 28 pins only) SOP ICs adh e re d to a tape and w ound on a reel Pallet H oused in individual cells on stacked


    OCR Scan
    20pin 24pin 28pin 4x280 5x400 QFP32. 44pin SQFP56pin QFP64, 80pin rkm 34 transistor RKM 24 sm transistor rkm 21 transistor diode t95 mark J5 SOT-89 CRB20 T95 Diode sot36 rkm 45 transistor TS11 PDF