XC6371
Abstract: XC6372 PWM/PFM Controlled Step-Up DC/DC Converter TRANSISTOR 6B nichichemi XC6371A501PR Z X C SOT-89-5 mark A E sot-89 XC6371A XC6371C
Text: XC6371/XC6372 Series ETR0402_004 PWM,PWM/PFM Controlled Step-up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC6371/XC6372 series is a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4Ω switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode, and a
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XC6371/XC6372
ETR0402
50kHz,
100kHz,
180kHz
XC6371
XC6372
PWM/PFM Controlled Step-Up DC/DC Converter
TRANSISTOR 6B
nichichemi
XC6371A501PR
Z X C SOT-89-5
mark A E sot-89
XC6371A
XC6371C
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Untitled
Abstract: No abstract text available
Text: XC6371/XC6372 Series ETR0402_004 PWM,PWM/PFM Controlled Step-up DC/DC Converters GreenOperation Compatible GENERAL DESCRIPTION The XC6371/XC6372 series is a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4 switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode, and a
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XC6371/XC6372
ETR0402
50kHz,
100kHz,
180kHz
XC6371
XC6372
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Step-Up
Abstract: No abstract text available
Text: XC6371/XC6372 Series ETR0402_005 PWM,PWM/PFM Controlled Step-up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC6371/XC6372 series is a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4Ω switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode, and a
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XC6371/XC6372
ETR0402
50kHz,
100kHz,
180kHz
XC6371
XC6372
Step-Up
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Transistor c54
Abstract: cr54 diode XC6372A301PR Schottky Diode SOT-89 nichichemi
Text: XC6371/XC6372 Series ETR0402_002 PWM Controlled Step-Up DC/DC Converters ☆GreenOperation-Compatible •GENERAL DESCRIPTION The XC6371/XC6372 series is a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4Ω switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode, and a
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XC6371/XC6372
ETR0402
50kHz,
100kHz,
180kHz
XC6371
XC6372
Transistor c54
cr54 diode
XC6372A301PR
Schottky Diode SOT-89
nichichemi
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XC6371
Abstract: XC6372 XC6373
Text: XC6371/XC6372/XC6373 Series ETR0402_002 PWM Controlled Step - Up DC/DC Contorollers/Convereters ☆GO-Compatible •GENERAL DESCRIPTION The XC6371/6372/6373 series are a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4Ω switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode,
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XC6371/XC6372/XC6373
ETR0402
XC6371/6372/6373
100mV
50kHz,
100kHz,
180kHz
XC6371
XC6372
XC6373
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G-Luxon
Abstract: No abstract text available
Text: AP1501 A -EV Application Note AP1501(A) Application Information and Demo Board User Guide Contents 1. Description 2. Schematic 3. EVM Board and Efficiency 4. PCB Layout 5. Bill of Materials This application note contains new product information. Diodes, Inc. reserves the right to modify the product specification without notice. No liability is
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AP1501
AP1501/A
lK107F104ZA-T
C0603
22uH/5A
R0805
G-Luxon
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schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
schottky diode 60V 5A
30A high speed diode
Schottky Diode 20V 5A
Schottky diode high reverse voltage
marking code 1A diode
Schottky Diode 40V 2A
Schottky Barrier 3A
diode schottky code 10
SCHOTTKY BARRIER DIODE
ERG81-004
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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sj 2025 for amplifiers
Abstract: sj 2025 GP2W1002YP0F DSAE001141 max70s Ultrasonic Receive Transmit sensors ultrasonic transceiver ic IEC60825-1 ic sj 2025 ir transmitter and receiver sensor
Text: GP2W1002YP0F GP2W1002YP0F IrDA Compliant Transceiver Module 9.6 kb/s to 1.152 Mb/s MIR Low Profile Low Consumption current •Description ■Agency approvals/Compliance The GP2W1002YP0F is an infrared transceiver module for IrDA ver. 1.4 (MIR). The transceiver consisits of a pin-photo diode, infrared
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GP2W1002YP0F
GP2W1002YP0F
IEC60825-1
2002/95/EC)
E3-A00201EN
sj 2025 for amplifiers
sj 2025
DSAE001141
max70s
Ultrasonic Receive Transmit sensors
ultrasonic transceiver ic
ic sj 2025
ir transmitter and receiver sensor
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yx 805 ic
Abstract: YX 805 4 pin yx 805
Text: EClamp2410PQ ESD Protection Device for T-Flash/MicroSD Interfaces PROTECTION PRODUCTS - EMIClamp Description Features The EClamp®2410PQ is a combination EMI filter and line termination device with integrated TVS diodes for use on Multimedia Card interfaces. This state-of-theart device utilizes solid-state silicon-avalanche technology for superior clamping performance and DC electrical characteristics. They have been optimized for
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2410PQ
yx 805 ic
YX 805 4 pin
yx 805
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Schottky Diode SOT-89
Abstract: TRANSISTOR 6B capacitor 47uF TANTALUM sot89 "type name" J transistor diode SOT89 sot-89 805 MA2Q735 XCY672 XCY672S011 XCY672S011PR
Text: ☆GO Compatible ◆CMOS Low Power Consumption ◆Operating Input Voltage Range :0.9V~10.0V ◆Output Voltage : 3.06V, 2.76V ◆Output Voltage Accuracy : ±2.0% ◆Oscillation Frequency : 100kHz • APPLICATION ■GENERAL DESCRIPTION ■FEATURES XCY672S series are PWM/PFM automatic controlled step-up
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100kHz
XCY672S
XCY672S011PR
100uH
1mA-30mA
20msec/div)
Schottky Diode SOT-89
TRANSISTOR 6B
capacitor 47uF TANTALUM
sot89 "type name" J transistor
diode SOT89
sot-89 805
MA2Q735
XCY672
XCY672S011
XCY672S011PR
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR740UL TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. 2 FEATURES 1 2 B H 1 D ・Low Forward Voltage. A ・High Reliability. H E G ・Leadless ultra small package. DIM MILLIMETERS _ 0.05 A 1.0 +
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KDR740UL
100mA
200mA
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E61 sot-23-5
Abstract: marking E61 diode MARKING e6 SOT235 SOT 86 MARKING E4 Supplied As. 5-Pin SOT 23-5 e5 mosfet e72 XC9110A/C/E E7 Marking sot-23-5 XC9111A marking E72
Text: XC9110/XC9111 Series ETR0406 004 PFM Controlled Step-Up DC/DC Converter / Controller ICs •GENERAL DESCRIPTION The XC9110/9111 series is a group of PFM controlled step-up DC/DC converter/controller ICs designed to generate low supply voltage by the combination of PFM control and CMOS structure. The series is ideal for applications where a longer battery life is
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XC9110/XC9111
ETR0406
XC9110/9111
XC9110A/C/E
XC9111A/C/E
XC9110/9111B,
E61 sot-23-5
marking E61 diode
MARKING e6 SOT235
SOT 86 MARKING E4
Supplied As. 5-Pin SOT 23-5 e5
mosfet e72
E7 Marking sot-23-5
XC9111A
marking E72
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E72 transistor sot 23
Abstract: XC9111A E61 sot-23-5 Supplied As. 5-Pin SOT 23-5 e5 MARKING e6 SOT235 marking E61 diode XP01SB04A2BR marking e61 SOT 86 MARKING E4 E72 transistor
Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A •APPLICATIONS ●Mobile phones ●Various palm top equipment
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XC9110
XC9111
XC9111A
XC9111B
XC9110/9111
E72 transistor sot 23
E61 sot-23-5
Supplied As. 5-Pin SOT 23-5 e5
MARKING e6 SOT235
marking E61 diode
XP01SB04A2BR
marking e61
SOT 86 MARKING E4
E72 transistor
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Untitled
Abstract: No abstract text available
Text: Terminals, Z-Series Feed-through terminals ZDU 2.5N Compact style 2.5 mm² ZDU 2.5N/3AN 2 connections 3 connections 5.1 x 50.5 x 39 24 / 4 0.05.4 5.1 x 56.5 x 39 24 / 4 0.05.4 2.5 mm² In hazardous area applications, the installation instructions and the rated data specifications for accessories given in the
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TS35x7
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Untitled
Abstract: No abstract text available
Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current •APPLICATIONS :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones ●PDAs
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XC9110
XC9111
XC9110/9111
XC9110/9111
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westlake 150
Abstract: No abstract text available
Text: SD101A-101C L L / LLSD101A - 101C I litt II U H INCORPORATED SCHOTTKY BARRIER SWITCHING DIODES Features Low Forward Voltage Drop Guard Ring Construction fo r Transient Protection Fast S w itching Speed Available in either through hole or surface m ou n t package.
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SD101A-101C
MIL-STD-202,
DO-35
DO-35
westlake 150
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sd101
Abstract: LL101A
Text: SDIOIA 1N6263 . SDIOIC, SD101AW . SD101CW Silicon Schottky Barrier Diodes for general purpose applications. The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for
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1N6263)
SD101AW
SD101CW
LL101
LL101A
LL101C.
1N6263.
DO-35
sd101
LL101A
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MARK SD DIODE
Abstract: No abstract text available
Text: HSC276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features • • Outline High forward current, Low capacitance. Ultra small Flat Package UFP is suitable for surface mount design. Cathode mark Mark 1>=f LJ I Ordering Information
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HSC276
HSC276
MARK SD DIODE
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LLSD103A
Abstract: No abstract text available
Text: I litt SD103A-103C LL / LLSD103A - 1 03C IIUH INCORPORATED SCHOTTKY BARRIER SWITCHING DIODES Features L o w F orw ard V o lta g e D rop G uard Ring C onstruction fo r T ra n s ie n t Protection Fast S w itch in g S peed A v aila b le in e ith e r th ro u g h hole or
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SD103A-103C
LLSD103A
-103C
MIL-STD-202,
DO-35
DO-35
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SOD123 4001
Abstract: No abstract text available
Text: SD103A . SD103C, SD 103AW . SD103CW Silicon Schottky Barrier Diodes for general purpose applications. The SD103 series is a metal-on-silicon Schotlky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it idea! for
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SD103A
SD103C,
103AW
SD103CW
SD103
LL103A
LL103C.
DO-35
SD103C)
SOD123 4001
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY IS S U E 2 - J A N U A R Y 1998 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current
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SDA12
SDA12D8
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY SDA12 ISSU E 1 -A U G U S T 1996 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current - 200mA
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SDA12
200mA
SDA12N8
SDA12D8
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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