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    MARK LH SOT23 Search Results

    MARK LH SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARK LH SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62902-B152-F222

    Abstract: Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376
    Text: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche IV Color of light [mcd] emitting area TOPLED LH T674-KM LH T674-L LH T674-M LH T674-LN LS T670-HK LS T670-J


    Original     		PDF T674-KM T674-L T674-M T674-LN T670-HK T670-J T670-K T670-L T670-JM Q62902-B152-F222 Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376

    Q62902-B152-F222

    Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter


    Original     		PDF Q62902-B154-F222 Q62902-B141-F222 GPXY6739 GPXY6738 Q62902-B152-F222 lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20

    Q62901-B65

    Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology


    Original     		PDF HOP2000) Q62902-B154-F222 Q62902-B141-F222 GEXY6720 Q62901-B65 Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699

    MO178AA

    Abstract: MO178AB JEDEC to 243 MO-137 MO-187 TSOT23 SOT23W-3 JEDEC MO-187 ba
    Text: PACKAGE OUTLINES PLASTIC QUARTER-SIZED SMALL OUTLINE PACKAGE QSOP 24 leads Package Designator LF 8.74 .344 8.55 .337 8º 0º 24 0.25 .010 0.19 .007 3.99 .157 3.81 .150 6.20 .244 5.79 .228 A 1 1.27 .050 0.40 .016 2 0.254 .010 REF 24X SEATING PLANE GAUGE PLANE


    Original     		PDF MO-137 MO-187 MO178AA MO178AB JEDEC to 243 TSOT23 SOT23W-3 JEDEC MO-187 ba

    A3213

    Abstract: hall magnetic bipolar A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T EH-012-1
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 hall magnetic bipolar A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T EH-012-1

    Untitled

    Abstract: No abstract text available
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214

    A3213

    Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T magnet A3213LLH
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T magnet A3213LLH

    A3213

    Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T la3213
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T la3213

    A3213

    Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T

    Untitled

    Abstract: No abstract text available
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214

    A1302

    Abstract: A1302EUA-T "Hall Effect Sensors" A1301EUA-T A1302KUA-T A1301ELHLT-T A1301EUA A1302EUA A1301 a1302k
    Text: A1301 and A1302 Continuous-Time Ratiometric Linear Hall Effect Sensors Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic


    Original     		PDF A1301 A1302 A1302 A1301, A1302. A1302EUA-T "Hall Effect Sensors" A1301EUA-T A1302KUA-T A1301ELHLT-T A1301EUA A1302EUA a1302k

    Untitled

    Abstract: No abstract text available
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214

    Untitled

    Abstract: No abstract text available
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214

    Allegro 41 HALL

    Abstract: A3213 A3213ELHLT-T A3214EUA-T
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 Allegro 41 HALL A3213ELHLT-T A3214EUA-T

    A3214LUA-T

    Abstract: No abstract text available
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Not for New Design These parts are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of this device is currently restricted to existing customer applications.


    Original     		PDF A3213 A3214 A3214LUA-T

    A3214

    Abstract: A3213 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T ams YEAR DATE CODE A3214LUA-T
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T ams YEAR DATE CODE A3214LUA-T

    A3213ELHLT-T

    Abstract: A3213EUA-T A3213 A3214 A3214ELHLT-T IPC-7351 A3214EUA-T
    Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless


    Original     		PDF A3213 A3214 A3214 A3213ELHLT-T A3213EUA-T A3214ELHLT-T IPC-7351 A3214EUA-T

    allegro A3212

    Abstract: GH-057-2
    Text: A3211 and A3212 Micropower, Ultrasensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched digital output. These devices are especially suited for operation


    Original     		PDF A3211 A3212 allegro A3212 GH-057-2

    4 lead SMD Hall sensors

    Abstract: smd hall smd hall effect sensor A3212ELH A3212ELHLT application notes SMD Hall C PH-016 A3211 A3212 A3212EEHLT
    Text: A3211 and A3212 Micropower, Ultra-sensitive Hall-effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with latched digital output. These sensors are especially suited for operation in


    Original     		PDF A3211 A3212 A3212 4 lead SMD Hall sensors smd hall smd hall effect sensor A3212ELH A3212ELHLT application notes SMD Hall C PH-016 A3212EEHLT

    Untitled

    Abstract: No abstract text available
    Text: LOW VOLTAGE DETECTOR R3111x SERIES NO. EA-056-061205 OUTLINE The R3111 series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.


    Original     		PDF R3111x EA-056-061205 R3111 R3111XXXXC R3111x

    hallsensor smd

    Abstract: No abstract text available
    Text: A3211 and A3212 Micropower, Ultrasensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched digital output. These sensors are especially suited for operation


    Original     		PDF A3211 A3212 hallsensor smd

    mark lh sot23

    Abstract: No abstract text available
    Text: SEM ICO NDUCTO R TECHNICAL DATA MMBTA13/14 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25°C SYMBOL CHARACTERISTIC Collector-Base oltage CBO Collector-Emitter oltage CES Emitter-Base oltage EBO Collertor Current


    OCR Scan     		PDF MMBTA13/14 OT-23 idths300//S, MMBTA13 MMBTA14 mark lh sot23

    TK110

    Abstract: TK11051M DB3-J159 Nuclear Radiation Level Sensor
    Text: TK11051M S P E C IF IC A T IO N TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Funct ion 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Block Diagram 10.Pin Assignment 11.Package Outline Dim e n s i o n s / M a r k i n g


    OCR Scan     		PDF TK11051M DB3-J159 TK11051M. TK110* QH7-B002. DP3-F016. 0B3-J159 TK110 TK11051M DB3-J159 Nuclear Radiation Level Sensor

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


    OCR Scan     		PDF DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A