DSM3MA4
Abstract: DSM3MA2 DSM3MA1 DSM3MA HITACHI
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 2.0 (0.08) 4.0 (0.16) DCB S A 4 Cathode band 0.2MAX (0.008) 2.5
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DSM3MA2
Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)
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DSM1MA2
Abstract: hitachi rectifier
Text: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B Z B S A 4 Cathode band 2.0 (0.08) 4.3 (0.17)
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DSM1MA2
Abstract: DSM1MA HITACHI Hitachi DSA0047
Text: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)
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ERB12
Abstract: No abstract text available
Text: ERB12 1 .OA i Outline Drawings GENERAL USE RECTIFIER DIODE I Features • Compact size, lig h tw e ig h t • A ftS H 't High reliability * y — K”^ —9 i Applications Cathode mark •n m w tft General purpose rectifier applications œ l i1 Abridged ty p e name
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ERB12
aLERB12-10Â
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H14A
Abstract: H14B H14C H14D H14E H14F H14H H14J H14 HITACHI
Text: GENERAL-USE RECTIFIER DIODE H14 OUTLINE DRAWING H 29MIN. 1.14 H14A(100V) Brown H14B(200V) Red H14C(300V) Orange H14D(400V) Yellow H14E(500V) Green H14F(600V) Blue H14H(800V) Gray H14J(1000V) Purple φ 0.8 (0.03) Lot mark Color of cathode band Type 5MAX (0.2)
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29MIN.
62MIN.
H14A
H14B
H14C
H14D
H14E
H14F
H14H
H14J
H14 HITACHI
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H14B
Abstract: H14J H14D H14C H14A H14E h14h H14F Hitachi DSA00514
Text: GENERAL-USE RECTIFIER DIODE H14 OUTLINE DRAWING H 29MIN. 1.14 H14A(100V) Brown H14B(200V) Red H14C(300V) Orange H14D(400V) Yellow H14E(500V) Green H14F(600V) Blue H14H(800V) Gray H14J(1000V) Purple φ 0.8 (0.03) Lot mark Color of cathode band Type 5MAX (0.2)
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29MIN.
62MIN.
H14B
H14J
H14D
H14C
H14A
H14E
h14h
H14F
Hitachi DSA00514
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Switching diode 80V 200mA
Abstract: ROHM 1SS390 MARKING 68B9 47B diode
Text: EMD2 1208 size ROHM is a semiconductor manufacturer and has a series of the world's smallest packages! Surface Mounted package Extremely popular for portable products Double-terminal Diodes You can make your products lighter and smaller with it! Flat, thin, and
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1SS390
1SS400
RB520S-30
RB521S-30
RB751S-40
A/80V
A/30V
30mA/40V
40msec
Switching diode 80V 200mA
ROHM 1SS390 MARKING
68B9
47B diode
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1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474G
MIL-PRF-19500/474F
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N6496
1N6101
1n6511
1N6506
1N6507
1N5768
1N5770
1N5772
1N5774
1N6100
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1N5770
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474F
MIL-PRF-19500/474E
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N5770
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40N60KDA
Abstract: 40n60
Text: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description B A O S J C KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power
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KGF40N60KDA
40N60KDA
40n60
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40N60KDA
Abstract: 40n60 Mark MJ
Text: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGF40N60KDA
40N60KDA
40n60
Mark MJ
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SC9318FA
Abstract: SC9318FB LQFP-64-12 LQFP-64-12x12 SC9318-033
Text: Silan Semiconductors SC9318-033 DIGITAL TUNING SYSTEM DESCRIPTION The SC9318-033 is a single-chip digital tuning system optimum for portable sets such as headphone radio, etc… 5-band of FM/MW/LW/TV/SW are provided compatibly with worldwide destinations.
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SC9318-033
SC9318-033
LQFP-64-10x10-0
LQFP-64-12
x12-0
LQFP-64-10x10
SC9318FB
SC9318FA
12/24H
LQFP-64-12x12
SC9318FA
SC9318FB
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)
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KTX301U
100mA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ・Simplify circuit design. 1 2 5 DIM A A1 Thin Extreme Super mini type with 5pin.
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KTX301E
100mA
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KTX401E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX401E EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX401E
100mA
KTX401E
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KTX401E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX401E EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX401E
100mA
KTX401E
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KTX301E
Abstract: MARK diode general semiconductor TRANSISTOR A1 TR
Text: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX301E
100mA
KTX301E
MARK diode general semiconductor
TRANSISTOR A1 TR
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marking A1 TRANSISTOR
Abstract: KTX301U f1 transistor mark
Text: SEMICONDUCTOR KTX301U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Including two TR, Diode devices in USV. 1 5 A 2 C Simplify circuit design.
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KTX301U
100mA
marking A1 TRANSISTOR
KTX301U
f1 transistor mark
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marking A1 TRANSISTOR
Abstract: KTX401E 5Q14
Text: SEMICONDUCTOR KTX401E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX401E
100mA
marking A1 TRANSISTOR
KTX401E
5Q14
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 DIM A A1 B A 2 C ・Simplify circuit design.
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KTX301U
100mA
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KTX301E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX301E
100mA
KTX301E
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KTX301U
Abstract: diode d1
Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.
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KTX301U
100mA
KTX301U
diode d1
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marking A1 TRANSISTOR
Abstract: KTX301E power diode f1 transistor mark TRANSISTOR A1 TR
Text: SEMICONDUCTOR KTX301E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.
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KTX301E
100mA
marking A1 TRANSISTOR
KTX301E
power diode
f1 transistor mark
TRANSISTOR A1 TR
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