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    MARK DIODE Search Results

    MARK DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    MARK DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSE11

    Abstract: Hitachi DSA002712
    Text: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode


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    PDF HSE11 ADE-208-162A HSE11 10sec 16GHz 12GHz Hitachi DSA002712

    Hitachi DSA00772

    Abstract: HSE11
    Text: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode


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    PDF AED-208-162A HSE11 10sec 16GHz 12GHz Hitachi DSA00772 HSE11

    zener diode zg

    Abstract: ZG zener E35A21VBR E35A21VBS
    Text: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA


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    PDF E35A21VBS, E35A21VBR E35A21VBS 100mA, 100mS zener diode zg ZG zener E35A21VBR E35A21VBS

    Untitled

    Abstract: No abstract text available
    Text: HVP-15 15kV 750mA HIGH VOLTAGE DIODES Outline Drawings : mm HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH MOUNTING SLOTS. Features Rectifier Blocks High Voltage Mounting Slots Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit


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    PDF HVP-15 750mA

    Untitled

    Abstract: No abstract text available
    Text: HVP-5 5kV 750mA HIGH VOLTAGE DIODES Outline Drawings : mm HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH MOUNTING SLOTS. Features Rectifier Blocks High Voltage Mounting Slots Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit


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    PDF 750mA

    Untitled

    Abstract: No abstract text available
    Text: HVP-8 8kV 750mA HIGH VOLTAGE DIODES Outline Drawings : mm HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH MOUNTING SLOTS. Features Rectifier Blocks High Voltage Mounting Slots Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit


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    PDF 750mA

    Untitled

    Abstract: No abstract text available
    Text: HVP-12 12kV 750mA HIGH VOLTAGE DIODES Outline Drawings : mm HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH MOUNTING SLOTS. Features Rectifier Blocks High Voltage Mounting Slots Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit


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    PDF HVP-12 750mA

    Untitled

    Abstract: No abstract text available
    Text: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band


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    Untitled

    Abstract: No abstract text available
    Text: HVP16KV-1A 16kV 1.0A HIGH VOLTAGE DIODES The picture HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH MOUNTING SLOTS. Features Rectifier Blocks High Voltage Mounting Slots Cathode Mark Type Applications Mark X light Power supply Laser HVP16KV-1A Voltage doubler circuit


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    PDF HVP16KV-1A Outpu16

    1N5831B

    Abstract: 1N5958B 1N5360B N4730A MLL5236B 1N5958 MLL5255B motorola 1N4761A motorola 1N4740A MLL5243B
    Text: General-Purpose Regulator Diodes continued 500 mW 1 Watt 1 Watt 1.5 Watt 5 Watt Nominal Zener Voltage Cathode = Polarity Mark Cathode = Polarity Mark Cathode to Case Cathode = Polarity Mark Cathode = Polarity Mark ('Note 1) (•Notes 2,6,14) (*Notes 2,7,18)


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    PDF 362B-01 DO-13) DO-41) MLL5221B MLL5222B MLL5223B MLL5224B MLL5225B MLL5226B 1N4728A 1N5831B 1N5958B 1N5360B N4730A MLL5236B 1N5958 MLL5255B motorola 1N4761A motorola 1N4740A MLL5243B

    Untitled

    Abstract: No abstract text available
    Text: HVU357-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35ii max • Ultra small R e sin package (URP) is suitable for surface mount design. Cathode mark Mark — Ordering Information Type No. Laser Mark Package Code


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    PDF HVU357----------Variable HVU357 470MHz

    Untitled

    Abstract: No abstract text available
    Text: HVU350-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs= 0.50ft max • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark Mark S R j 1Œ| Ordering Information ty p e No. Laser Mark


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    PDF HVU350--------Variable HVU350

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


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    PDF DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A

    Zener Diode B1 9

    Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
    Text: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark


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    ESM 310

    Abstract: No abstract text available
    Text: IP Light Emitting Package Diodes/Surface Mounting Type Dimensions Diagram (Unit : mm) Chip LEDs/Low Current Chip LEDs •SM L-210/SM L-211 •SM L-310/SM L-311 •S M L -0 1 0 2.3 r ! [ Cathode mark Cathode mark H” . Cathode mark n u n > u — T erm in al


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    PDF L-310/SM L-311 L-210/SM L-211 L-020 ESM 310

    Untitled

    Abstract: No abstract text available
    Text: HVU187-Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Features Outline • Low forward resistance. rp5.5Q max • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark "HT.- .,


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    PDF HVU187 100nA HVU187

    Untitled

    Abstract: No abstract text available
    Text: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information


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    PDF HSU276 HSU276 200pr

    Untitled

    Abstract: No abstract text available
    Text: HSU88-Silicon Schottky Barrier Diode for CATV Converter Features Outline • Low capacitance. C=0.8pF max • Low forward voltage. • Ultra small Eesin package (URP) is suitable for surface mount design. Cathode mark ,-JZT Mark Ordering Information


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    PDF HSU88 HSU88 400nA

    diode package DO214

    Abstract: do-214 mark k5
    Text: HRF302A-Silicon Schottky Barrier Diode for Rectifying Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Cathode mark Mark


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    PDF HRF302A DO-214 HRF302A DO-214 10msec diode package DO214 mark k5

    Untitled

    Abstract: No abstract text available
    Text: HSU83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline High reverse voltage. VR=250V Ultra small R esin Package (URP) is suitable for surface mount design. Cathode mark Mark Ü 2 Ordering Information Type No.


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    PDF HSU83------------------------Silicon HSU83 10msec 100i2

    MARK SD DIODE

    Abstract: No abstract text available
    Text: HSC276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features • • Outline High forward current, Low capacitance. Ultra small Flat Package UFP is suitable for surface mount design. Cathode mark Mark 1>=f LJ I Ordering Information


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    PDF HSC276 HSC276 MARK SD DIODE

    1021A1

    Abstract: No abstract text available
    Text: H S E 1 1 - GaAs Schottky Barrier Diode for SHF Mixer Features Outline • L o w noise GaAs schottky. • L ow capacitance. C =0.4pF max Ordering Information Type No. Mark Package Code HSE11 Cathode mark


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    PDF HSE11 10sec 50VF3 75Vp2 75VF1 HSE11 1021A1

    Untitled

    Abstract: No abstract text available
    Text: HVC202A-Variable Capacitance Diode for UHF/VHF Tuner Features Outline • Low series resistance and good C-V linearity. • Ultra small Elat Package UFP is suitable for surface mount design. • Suitable for compact ET tuner. Cathode mark Mark


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    PDF HVC202A---------------Variable HVC202A HVC202A

    S 437 Diode

    Abstract: No abstract text available
    Text: HVU355-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.6i2 max • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1 Ordering Information — • :Xvÿ-: - I 1 j : : 2


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    PDF HVU355----------Variable HVU355 470MHz HVU355 S 437 Diode