Untitled
Abstract: No abstract text available
Text: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark
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PC3H71X
Series/PC3Q71X
PC3Q71X
E64380
PC3H71xNIP
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIn
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PC3Q710NIP
Abstract: pc3q711 Low input current Photocoupler E64380 PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIP PC3Q711NIP
Text: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark
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PC3H71X
Series/PC3Q71X
PC3H71xNIP
PC3Q710NIP
PC3Q711NIP
PC3Q71xNIP
PC3Q71
pc3q711
Low input current Photocoupler
E64380
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIP
PC3Q711NIP
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20MHZ
Abstract: 49C465 IDT49C465 IDT49C465A error correction code mlc L9908
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: L9908-04 Product Affected: 49C465/A DATE: August 15, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Manufacturing Location Affected:
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L9908-04
49C465/A
64-bit
IDT49C465/A
32-BIT
49C465
20MHZ
49C465
IDT49C465
IDT49C465A
error correction code mlc
L9908
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E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP nip 17
Text: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection
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PC3H41X
Series/PC3Q410
PC3Q410NIP
PC3Q41
E64380
PC3H410NIP
PC3H411NIP
PC3Q410NIP
nip 17
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E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06
Text: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection
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PC3H41X
Series/PC3Q410
PC3Q410NIP
PC3Q41
E64380
PC3H410NIP
PC3H411NIP
PC3Q410NIP
DIODE C04 06
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A128C256
Abstract: 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5
Text: 3/22/98 – REV 1.0 Design Tutorial, PSD813F1 – 80C31 Application Note 057 Preliminary By Dan Harris and Mark Rootz Contents 1 Introduction . 2
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PSD813F1
80C31
A128C256
80c31 application
8031P
H0902
eeprom PROGRAMMING tutorial
h0908
WSI Cross Reference
29F010
EPM7064S
EPM7064SLC84-5
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working of 5 pen pc technology
Abstract: rifa pme 285 for all smd components plastic raw material xenon lamp igniter 5 PEN PC TECHNOLOGY free 5 PEN PC TECHNOLOGY existing xenon hid ballast Electronic ignitors for HID lamp circuits abstract 5 pen pc technology
Text: Advances in Class-I C0G MLCC and SMD Film Capacitors Xilin Xu, Matti Niskala*, Abhijit Gurav, Mark Laps, Kimmo Saarinen*, Aziz Tajuddin, Davide Montanari*, Francesco Bergamaschi*, and Evangelista Boni* KEMET Electronics Corporation, 2835 KEMET Way, Simpsonville, SC 29681
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p77-84,
p187-191,
working of 5 pen pc technology
rifa pme 285
for all smd components
plastic raw material
xenon lamp igniter
5 PEN PC TECHNOLOGY free
5 PEN PC TECHNOLOGY existing
xenon hid ballast
Electronic ignitors for HID lamp circuits
abstract 5 pen pc technology
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV202E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. Low Series Resistance : rs=0.6 Max. Small Package : ESC. E C 1 A High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.) B CATHODE MARK
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KDV202E
100MHz
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KDV202E
Abstract: C02V
Text: SEMICONDUCTOR TECHNICAL DATA KDV202E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES Small Package : ESC. 1 A Low Series Resistance : rs=0.6 Max. E C B CATHODE MARK High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.)
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KDV202E
100MHz
KDV202E
C02V
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KDV202E
Abstract: c23V
Text: SEMICONDUCTOR KDV202E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. Low Series Resistance : rs=0.6 Max. Small Package : ESC. E C 1 A High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.) B CATHODE MARK
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KDV202E
100MHz
KDV202E
c23V
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VARIABLE CAPACITANCE DIODE
Abstract: KDV245E
Text: SEMICONDUCTOR TECHNICAL DATA KDV245E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF Band Radio. Low Series Resistance : rs=0.35 Typ. Useful for Small Size Tuner. 1 A High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) E C B CATHODE MARK
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KDV245E
470MHz
VARIABLE CAPACITANCE DIODE
KDV245E
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LT1968
Abstract: Sine Wave Generation Techniques schematic diagram 48V automatic battery charger circuit diagram for 48v 10a automatic battery charger SOT-23 MOSFET P-CHANNEL a1 1- mark 12V, 20A automatic charger schematic schematic diagram 48v dc 3A battery charger 10K115 LTC6905 48v battery charger schematic diagram
Text: LINEAR TECHNOLOGY MARCH 2005 COVER ARTICLE Smart Batteries: Not Just for Notebooks Anymore . 1 Mark Gurries Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES Dual Monolithic Ideal Diodes
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170MHz
OT-23
I-20156
SE-164
LT1968
Sine Wave Generation Techniques
schematic diagram 48V automatic battery charger
circuit diagram for 48v 10a automatic battery charger
SOT-23 MOSFET P-CHANNEL a1 1- mark
12V, 20A automatic charger schematic
schematic diagram 48v dc 3A battery charger
10K115
LTC6905
48v battery charger schematic diagram
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KDV202E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV202E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES G 1 G ・Small Package : ESC. E C A ・Low Series Resistance : rs=0.6Ω Max. B CATHODE MARK ・High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.)
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KDV202E
100MHz
KDV202E
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MC68HC705J1A
Abstract: AN1754 DS1620 HC05 HC705J1A M68MMPFB0508 ds1620 interface
Text: Order this document by AN1754/D Freescale Semiconductor Freescale Semiconductor, Inc. AN1754 Interfacing the MC68HC705J1A to the DS1620 Digital Thermometer By Mark Glenewinkel Field Applications Engineering Consumer Systems Group Austin, Texas Introduction
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AN1754/D
AN1754
MC68HC705J1A
DS1620
MC68HC705J1A
AN1754
HC05
HC705J1A
M68MMPFB0508
ds1620 interface
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MC68HC705J1A
Abstract: an7602 mc33201 motorola MC33201 256-D AD8042 AD8400 AD8402 AD8403 AN1760
Text: Freescale Semiconductor, Inc. vc Order this document by AN1760/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1760 Interfacing the AD8402 Digital Potentiometer to the MC68HC705J1A By Mark Glenewinkel Field Applications Engineering
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AN1760/D
AN1760
AD8402
MC68HC705J1A
MC68HC705J1A
an7602
mc33201
motorola MC33201
256-D
AD8042
AD8400
AD8403
AN1760
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Untitled
Abstract: No abstract text available
Text: ! ADE-208-372 Z HVU367 Variable Capacitance Diode for VCO HITACHI Features Rev. 0 Jun. 1995 Outline • Low series resistance. (rs=0.4Q max) • Ultra small Eesin Package (URP) is suitable for surface mount design. Cathode mark Mark 77Î7: Ordering Information
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HVU367
ADE-208-372
HVU367
470MHz
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7 segment display with alarm
Abstract: transistor BD 339 20PF NJU6357 NJU6357C bc 938 12 Hour Digital Clock Circuit transistor bc 557 c Quartz Crystal 32.768KHz transistor HR
Text: NJU635 7 P R E L I M I 3-1/2 LCD DISPLAY DIGITAL GENERAL DESCRIPTION The NJU6357 is 32kHz oscillation 3*1/2 duplex LCD display digital clock LSI with alarm and snooze functions. It performs 3*1/2 digits hour/minute display and shows other indicators: colon, PM mark, alarm mark,
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NJU6357
32kHz
NJU6357C
768kHz
100pF
NJU6357
7 segment display with alarm
transistor BD 339
20PF
NJU6357C
bc 938
12 Hour Digital Clock Circuit
transistor bc 557 c
Quartz Crystal 32.768KHz
transistor HR
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LPA—CD52301 D 20,64 [0.813] FOUR TA B S WITH 0 2 .9 5 SAM E D IM ENSIONS, 4 x [ 0 0 .1 1 6 ] Œ0 PL S. 5mm) f ì f 2.61 [0.103] ì f £ N O TES : ì 3 H 1. CAVITY MARK AND 'LX* MARK ON TOP SURFACE. "*= r 0.50 [0.020] _ r
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CD52301
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t2474
Abstract: PLS151 L285
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LPA—CD52301 D 20,64 [0.813] FOUR TA B S WITH 0 2 .9 5 SAM E D IM ENSIONS, 4 x [ 0 0 .1 1 6 ] Œ0 PL S. 5mm) f ì f 2.61 [0.103] ì f £ N O TES : ì 3 H 1. CAVITY MARK AND 'LX* MARK ON TOP SURFACE. "*= r 0.50 [0.020] _ r
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CD52301
C052301
t2474
PLS151
L285
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Untitled
Abstract: No abstract text available
Text: REV. PART NUMBER REV. LXP —SSI —387BSH A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #1QBRDR. & 0.70 [0.028] DATE REDRAWN 3-D . 1 Û -2 3 -9 S NOTES: 1. CAVITY MARK. 2. LUMEX MARK. BH 3. MATERIAL: BLACK NYLON 94V-0. flS f 3.44 [0.135: I "U N L E S S OTHERWISE SPEC IFIED TO LERAN CE IS i O i 5 m m
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-23-9S
LX387
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Untitled
Abstract: No abstract text available
Text: 2x3mm molded package style 0 1 /» ^ p p /p r /c T M g SML-LX23XC-TR g I 1a K _ I I Transfer Molded t o ^ ^ m 2 2 2 i* E S 2 . Reflective Housing 2.00 [0 .0 7 9 ] □ 8.00 CO.0 7 9 ] CATHODE MARK ANODE MARK FOR SR 1.40 CO.0 5 5 ] 0.60 [0 .0 2 4 ] ~T
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SML-LX23XC-TR
L-LX23U
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Untitled
Abstract: No abstract text available
Text: j L El 0 O cn N N » 'y ^ ^ LO CK *4 -?* I I TYPE m r I I 20.6 AS "y i? ^ SHOWN ^ -ym I & LO CK TYPE I Cl 1 « O < TU EZL -tè I ri . i 1- y- — K • ^ TRADE MARK O a H LÜ r A h U -P T —? (TRADE MARK) ÎÉ jÉ Ü P fî (MANUFACTURING PLACE) _ B * (JAPAN)
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22AW6)
177S08-
16AWG)
CUL94V-C)
30UIT
C-177900
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4mm7
Abstract: No abstract text available
Text: j L El 0 O cn N N » 'y ^ ^ LO CK *4 -?* I I TYPE m r I I 20.6 AS "y i? ^ SHOWN ^ -ym I & LO CK TYPE I Cl 1 « O < TU EZL -tè I ri . i 1- y- — K • ^ TRADE MARK O a H LÜ r A h U -P T —? (TRADE MARK) ÎÉ jÉ Ü P fî (MANUFACTURING PLACE) _ B * (JAPAN)
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22AW6)
177S08-
16AWG)
CUL94V-C)
30UIT
C-177900
4mm7
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ON2170
Abstract: high sensitivity reflective phototransistor
Text: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated
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ON2170
ON2170
high sensitivity reflective phototransistor
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