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    MARK A DIODES Search Results

    MARK A DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARK A DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BAS70WS

    Abstract: Plastic-Encapsulate Diodes Schottky diode low voltage marking k73
    Text: BAS70WS Schottky Diodes Plastic-Encapsulate Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-323 FEATURES CATHODE MARK 2.5±0.2 * Low Turn-on Voltage * Designed For Surface Mount Application 1.7±0.1


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    BAS70WS OD-323 01-Jun-2002 BAS70WS Plastic-Encapsulate Diodes Schottky diode low voltage marking k73 PDF

    LL101

    Abstract: LL101A LL101B LL101C SD101A
    Text: LL101A - LL101C SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching


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    LL101A LL101C OD-80C) LL101 DO-35 SD101A, LL101B LL101B LL101C SD101A PDF

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    Abstract: No abstract text available
    Text: LL48 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,


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    OD-80C) DO-35 BAT48. 100mA 500mA PDF

    LL103A

    Abstract: LL103B LL103C SD103A
    Text: LL103A - LL103C SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL103A, B, C series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching


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    LL103A LL103C OD-80C) LL103A, DO-35 SD103A, 300ms LL103B LL103C SD103A PDF

    ESJA20

    Abstract: No abstract text available
    Text: HVCA ESJA20-20A 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm ESJA20-20A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA20-20A ESJA20-20A ESJA20 PDF

    ESJA53

    Abstract: No abstract text available
    Text: HVGT ESJA53-20A 5mA 20kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-20A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA53-20A ESJA53-20A DO-312 ESJA53 PDF

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    Abstract: No abstract text available
    Text: HVCA ESJA20-20 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA20-20 Cathode Mark


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    ESJA20-20 ESJA20 PDF

    ESJA53

    Abstract: No abstract text available
    Text: HVCA ESJA53-18A 5mA 18kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-18A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA53-18A ESJA53-18A ESJA53 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA ESJA53-16A 5mA 16kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-16A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA53-16A ESJA53-16A ESJA53-20A PDF

    Untitled

    Abstract: No abstract text available
    Text: LL42 - LL43 SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such


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    OD-80C) DO-35 BAT42 BAT43 200mA PDF

    BAT41 equivalent

    Abstract: ATTP1 IN 4001 static resistance BAT41 LL41
    Text: BAT41 Schottky Diodes FEATURES DO-35 min. 1.083 27.5 ♦ This diode featutres low turn-on voltage max. ∅.079 (2.0) Cathode Mark and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


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    BAT41 DO-35 DO-35 BAT41 equivalent ATTP1 IN 4001 static resistance BAT41 LL41 PDF

    ESJA53

    Abstract: No abstract text available
    Text: HVGT ESJA53-16A 5mA 16kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-16A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA53-16A ESJA53-16A DO-312 ESJA53 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA ESJA53-20A 5mA 20kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-20A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


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    ESJA53-20A ESJA53-20A PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS387S Elektronische Bauelemente High Speed Switching Diodes RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-523 CATHODE MARK . Features Small Package 1.2±0.05 1.6±0.1 0.3±0.05 0.12±0.05 0.8±0.05 0.6±0.1 Marking: G Dimensions in millimeters


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    SCS387S OD-523 100mA 01-Jun-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA 2CL82 30kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm 2CL82 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.5 Features


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    2CL82 2CL82 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA BR4 4.0kV 1.0A HIGH VOLTAGE DIODES Outline Drawings : mm BR4 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 5.0 o 1.28 Features


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA JB04 4.0kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm JB04 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.0 o 0.5 Features


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA BR4F 4.0kV 0.8A HIGH VOLTAGE DIODES Outline Drawings : mm BR4F is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 5.0 o 1.28 Features


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA HVRT300 30kV 30mA HIGH VOLTAGE DIODES Outline Drawings : mm HVRT is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features


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    HVRT300 PDF

    Untitled

    Abstract: No abstract text available
    Text: LL41 Schottky Diodes FEATURES MiniMELF ♦ ♦ This diode features low turn-on voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. C athode Mark .142 3 .6


    OCR Scan
    DO-35 BAT41. PDF

    MMBD4146

    Abstract: to236 to-236 MMBD1201 MMBD2837 5d mark 5d surface mount diode MMBD1204 MMBD1205 MMBD1401
    Text: This I IT Material In O . tH l / V bJ LU Discrete POWER & Signal Technologies National Surface Mount Diodes S e m ico n d u cto r- a Copyrighted a D s: -C o= 03 General Purpose & Specialty Diodes PLASTIC PACKAGE Description Configuration Device (Mark) Bv


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    MMBD914 O-236 MMBD1201 MMBD1203 MMBD1204 MMBD1205 MMBD4146 to236 to-236 MMBD1201 MMBD2837 5d mark 5d surface mount diode MMBD1204 MMBD1205 MMBD1401 PDF

    2856K

    Abstract: PN307
    Text: Panasonic PIN Photodiodes PN307 PIN Photodiode U n it: mm For optical control systems Type number : Emitter mark Yellow • Features • High sensitivity, high reliability • Peak sensitivity wavelength m atched with infrared light emitting diodes : A,p = 800 nm (typ.)


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    PN307 2856K PN307 PDF

    Silicon Zener Diodes melf

    Abstract: 1n4728.1n4764 1N4728 1N4764 DL4728 DL4764
    Text: DL4728 thru DL4764 SILICON PLANAR POWER ZENER DIODES Cathode Mark for use in stabilizing and clipping circuits with high power rating. Standard Zener voltage toerance is 610%. Add 02 . 55 02 . 35 suffix "A" for 65% tolerance. Other tolerances available upon request.


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    DL4728 DL4764 DO-41 1N4728. 1N4764 200mA Silicon Zener Diodes melf 1n4728.1n4764 1N4728 1N4764 DL4764 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT42, BAT43 Schottky Diodes _ FEATURES_ DO-35 ♦ << max. 0.0 7 9 2.0 C athode Mark For general purpose applications ♦ These diodes feature very low turn- 'S !:i on voltage and fast switching. These devices are protected by a PN junction


    OCR Scan
    BAT42, BAT43 DO-35 OD-123 BAT42W BAT43W DO-35 BAT42 PDF