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    MARCONI RF POWER Search Results

    MARCONI RF POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MARCONI RF POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P35-4750-1

    Abstract: NN12 P35-4755-P05
    Text: Marconi Optical Components P35-4750-1 Transmit/Receive Gain Blocks and Switches for 2.5GHz WLAN Applications Features • Low receive current consumption · Integrated RF routing switch · Requires no external matching, RF coupling or biasing components Description


    Original     		PDF P35-4750-1 Pin14 P35-4750-1 463/SM/00081/200 NN12 P35-4755-P05

    4755

    Abstract: NN12 P35-4755-P05 Marconi Marconi Optical Components wireless switch transmit receive
    Text: Marconi Optical Components P35-4755-P05 Amplifier/Switch Front End MMIC for 1.7 - 2.7GHz Wireless Applications Features • · · · · Low receive current consumption Integrated RF routing switch Requires no external matching, RF coupling or biasing components


    Original     		PDF P35-4755-P05 21dBm P35-4755-P05 463/SM/00114/200 4755 NN12 Marconi Marconi Optical Components wireless switch transmit receive

    nokia 6280

    Abstract: Wire wound resistor inductance PE-1008CM High Q inductor PE-0805CD PE-1008CD chip inductor inductor coils PE-0805CM PE-1206CD
    Text: WIRE-WOUND RF CHIP INDUCTORS Application Notes The Basics of Wire-Wound Chip Inductors Pulse currently supplies high quality magnetic products to companies such as 3COM, Cisco, Ericsson, Intel, Marconi, Nokia and Nortel and has been active in the field of RF engineering, since the launch of its first wire-wound 1008


    Original     		PDF WC701 nokia 6280 Wire wound resistor inductance PE-1008CM High Q inductor PE-0805CD PE-1008CD chip inductor inductor coils PE-0805CM PE-1206CD

    NN12

    Abstract: P35-4245-0 P35-4245-3
    Text: P35-4245-0 Marconi Optical Components GaAs MMIC DPDT Reflective Switch, DC - 6GHz Features • · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4245-0 is a high performance Gallium Arsenide double pole double throw broadband RF switch MMIC. It is


    Original     		PDF P35-4245-0 P35-4245-0 462/SM/00026/200 NN12 P35-4245-3

    P35-4211-0

    Abstract: NN12 P35-4211-1
    Text: P35-4211-0 Marconi Optical Components GaAs MMIC SPDT Reflective Switch, DC - 3GHz Features • · · · · Broadband performance Low insertion loss; 0.5dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use in


    Original     		PDF P35-4211-0 P35-4211-0 462/SM/00029/200 NN12 P35-4211-1

    NN12

    Abstract: P35-4230-000-200
    Text: P35-4230-000-200 Marconi Optical Components GaAs MMIC SPST Terminated Switch, DC - 4GHz Features • · · · Broadband performance Low insertion loss; 1.6dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF switch MMIC. It is


    Original     		PDF P35-4230-000-200 P35-4230-000-200 462/SM/01745/200 NN12

    Untitled

    Abstract: No abstract text available
    Text: P35 P35-4721-000-200 GaAs MMIC POWER AMPLIFIER, 5-6GHz Features • • • • • • 24 dB Gain typical F20 MESFET technology 24dBm Output Power High, Medium 1, Medium 2 & Low Gain States PAE Max 25% Description The P35-4721-000-200 is a high performance Gallium Arsenide Power Amplifier MMIC. It is


    Original     		PDF P35-4721-000-200 24dBm P35-4721-000-200 P35-4721-000-20 462/SM/02231/200

    MARCONI power

    Abstract: NN12 P35-4721-000-200 MARCONI RF power MARCONI amplifier
    Text: P35-4721-200-000 GaAs MMIC POWER AMPLIFIER, 5-6GHz Features • • • • • • 24 dB Gain typical F20 MESFET technology 24dBm Output Power High, Medium 1, Medium 2 & Low Gain States PAE Max 25% Description The P35-4721-000-200 is a high performance Gallium Arsenide Power Amplifier MMIC. It is


    Original     		PDF P35-4721-200-000 24dBm P35-4721-000-200 P35-4721-000-200 462/SM/02231/200 MARCONI power NN12 MARCONI RF power MARCONI amplifier

    NN12

    Abstract: P35-4211-0 P35-4227-0
    Text: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description


    Original     		PDF P35-4227-0 P35-4227-0 P35-4211-0 462/SM/00042/200 NN12 P35-4211-0

    NN12

    Abstract: P35-0702R
    Text: P35-0702R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount package 0.5dB typ at 1GHz Description The P35-0702R is a high performance Gallium Arsenide monolithic single pole double throw RF switch


    Original     		PDF P35-0702R P35-0702R 463/SM/00022/200 NN12

    NN12

    Abstract: P35-4232-C06-200
    Text: P35-4232-C06-200 GaAs MMIC 2W SPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • High compression point; 34dBm typ


    Original     		PDF P35-4232-C06-200 34dBm P35-4232-C06-200 463/SM/00151/200 NN12

    NN12

    Abstract: P35-5140-000-200 MARCONI power
    Text: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for


    Original     		PDF P35-5140-000-200 40GHz 21dBm 200mA P35-5140-000-200 20-40GHz Ma-00906 462/SM/02820/200 400mA NN12 MARCONI power

    NN12

    Abstract: P35-4232-P01-200
    Text: P35-4232-P01-200 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • SO8 plastic package


    Original     		PDF P35-4232-P01-200 P35-4232-P01-200 463/SM/00163/200 NN12

    P35-4250

    Abstract: NN12 P35-4250-3
    Text: P35-4250-3 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO16 surface mount package 0.7dB typ at 1GHz Description The P35-4250-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is suitable


    Original     		PDF P35-4250-3 P35-4250-3 463/SM/00074/200 P35-4250 NN12

    GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    Abstract: NN12 P35-4227-3T
    Text: P35-4227-3T GaAs MMIC SPDT TERMINATED SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 45dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3T is a high performance Gallium Arsenide single pole double throw broadband RF


    Original     		PDF P35-4227-3T P35-4227-3T S20atic 463/SM/00057/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz NN12

    P35-0702T

    Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz MCL 25 NN12
    Text: P35-0702T GaAs MMIC SPDT TERMINATED SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; 0.6dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount package • 50Ω output terminations


    Original     		PDF P35-0702T P35-0702T S20tic 463/SM/00019/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz MCL 25 NN12

    MARCONI amplifier

    Abstract: No abstract text available
    Text: P35-4720-000-200 GaAs MMIC DRIVER AMPLIFIER, 5-6GHz Features • • • • • 25 dB Gain typical F20 MESFET Technology 21dBm Output Power High & Low Gain States PAE Max 25% Description The P35-4720-000-200 is a high performance Gallium Arsenide Driver Amplifier MMIC. It is


    Original     		PDF P35-4720-000-200 21dBm P35-4720-000-200 462/SM/02229/200 MARCONI amplifier

    NN12

    Abstract: P35-4720-000-200
    Text: P35-4720-000-200 GaAs MMIC DRIVER AMPLIFIER, 5-6GHz Features • • • • • 25 dB Gain typical F20 MESFET Technology 21dBm Output Power High & Low Gain States PAE Max 25% Description The P35-4720-000-200 is a high performance Gallium Arsenide Driver Amplifier MMIC. It is primarily


    Original     		PDF P35-4720-000-200 21dBm P35-4720-000-200 462/SM/02229/200 NN12

    MCL 29

    Abstract: NN12 P35-4211-0 P35-4211-1
    Text: P35-4211-0 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; 0.5dB typ at 1GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,


    Original     		PDF P35-4211-0 P35-4211-0 462/SM/00029/200 MCL 29 NN12 P35-4211-1

    DC TO 18GHZ RF AMPLIFIER MMIC

    Abstract: MCL 25 NN12 P35-4150-0
    Text: P35-4150-0 MONOLITHIC BROADBAND AMPLIFIER, 2 - 18GHz Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical Gain flatness ±0.5dB, typical On chip DC blocking capacitors at input and output


    Original     		PDF P35-4150-0 18GHz 15dBm, P35-4150 18GHz. 015dB/ 135mm 462/SM/00593/200 DC TO 18GHZ RF AMPLIFIER MMIC MCL 25 NN12 P35-4150-0

    NN12

    Abstract: P35-4227-3R
    Text: P35-4227-3R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 40dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3R is a high performance Gallium Arsenide single pole double throw broadband RF


    Original     		PDF P35-4227-3R P35-4227-3R 463/SM/00058/200 NN12

    soic14 150

    Abstract: NN12 P35-4245-3 SOIC14
    Text: P35-4245-3 GaAs MMIC DPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; 0.7dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO14 surface mount package Description The P35-4245-3 is a high performance Gallium Arsenide double pole double throw RF switch. It is


    Original     		PDF P35-4245-3 P35-4245-3 463/SM/00141/200 soic14 150 NN12 SOIC14

    NN12

    Abstract: P35-4252-3
    Text: P35-4252-3 GaAs MMIC SP4T TERMINATED SWITCH, DC - 2GHz Features • • • • • Broadband performance Low insertion loss; 0.7dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical SO16 surface mount package Description The P35-4252-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is


    Original     		PDF P35-4252-3 P35-4252-3 463/SM/00124/200 NN12

    NN12

    Abstract: P35-4100-0
    Text: P35-4100-0 MONOLITHIC BROADBAND AMPLIFIER, 0.05 - 3.5GHz Features • Ultra Broadband • Flat Frequency response with direct gain control • 20dBm output power capability • Input and output matched to 50Ω Description The P35-4100-0 is a high performance monolithic broadband amplifier designed for use in a wide range


    Original     		PDF P35-4100-0 20dBm P35-4100-0 50MHz P35-41AN3 462/SM/00516/200 NN12