TMS55161

Contextual Info: TMS55160, TMS55161, TMS55170, TMS55171 262144 BY 16-BIT MULTIPORT VIDEO RAMS SMVS464 – MARCH1996 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and

Contextual Info: S HI7191 HARRIS S E M I C O N D U C T O R Low Cost 24 -Bit High Precision Sigma Delta A/D Converter March1996 Features Description • 20-Bit Resolution with No Missing Code The Harris HI7191 is a monolithic instrumentation sigma delta A/D converter which operates from ±5V supplies. Both

TMS55161

Abstract: trf 510 transistor TMS55160 TMS55170 TMS55171
Contextual Info: TMS55160, TMS55161, TMS55170, TMS55171 262144 BY 16-BIT MULTIPORT VIDEO RAMS SMVS464 – MARCH1996 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and

driver 30381

Abstract: HS1337
Contextual Info: HS-3374RH HARRIS a S E M I C O N D U C T O R Radiation Hardened 8 -Bit Bidirectional CMOS/TTL Level Converter March1996 Features Pinout • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-9XXXX and Harris’ QM Plan

NDS351N

Contextual Info: N March1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is

KA 1046 Y 620

Contextual Info: CS-516003 ELECTRONICS Broadband UHF Voltage Variable Attenuator Sam sung M icrow ave Sam iconductor March1996 Prelim inary 300 - 3000 MHz Description Features (Typical) The C ? - * 16003 is a high performance Monolithic Microwave Integrated Circuit (MMIC) housed in a

TMS55161

Abstract: TMS55160 TMS55170 TMS55171
Contextual Info: TMS55160, TMS55161, TMS55170, TMS55171 262144 BY 16-BIT MULTIPORT VIDEO RAMS SMVS464 – MARCH1996 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and

Contextual Info: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he

Contextual Info: TL16C550C, TL16C550CI ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH AUTOFLOW CONTROL _ • • • • • • • • • • Programmable Auto-RTS and Auto-CTS In Auto-CTS Mode, CTS Controls Transmitter In Auto-RTS Mode, RCV FIFO Contents and

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY

STR 20012 DATA

Contextual Info: SMJ416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SQMSQ42E- MARCH 1 9 9 2 -REVISED MARCH 1986 Organization . . . 4194304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges; '416400-70 '416400-80 '416400-10 FNC PACKAGE (TOP VIEW)

4C1024-15

Abstract: 4c1024 ram 4C1024
Contextual Info: SMJ4C1024 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY 8QMSH83E - DECEMBER 1968 - REVISED MARCH 1886 Organization. . . 1048576 x 1-Blt HJ PACKAGE TOP VIEW Processed to MIL-STD-883, Class B Single 5-V Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY