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    MAR-08 TRANSISTOR Search Results

    MAR-08 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MAR-08 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6206a

    Abstract: Atmel SAM-ICE ARM at91sam jlink 6206A datasheet multi-ice interface unit idc 20 pin data ribbon connector 6206 JLINK-ARM 6206B
    Text: AT91SAM-ICE . User Guide 6206B–ATARM–04-Mar-08 1-2 6206B–ATARM–04-Mar-08 AT91SAM-ICE User Guide Table of Contents Section 1 Introduction. 1-1


    Original     		PDF AT91SAM-ICE 6206B 04-Mar-08 AT91SAM-ICE 6206a Atmel SAM-ICE ARM at91sam jlink 6206A datasheet multi-ice interface unit idc 20 pin data ribbon connector 6206 JLINK-ARM

    301 marking code PNP transistor

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS5350D 603506/01/pp8 301 marking code PNP transistor PBSS4350D PBSS5350D

    PBSS4350D

    Abstract: PBSS5350D MCD920
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS4350D 603506/01/pp8 PBSS4350D PBSS5350D MCD920

    BCV71

    Abstract: BCV72 BP317 2741 dc
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV71; BCV72 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 11 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors BCV71; BCV72 FEATURES


    Original     		PDF M3D088 BCV71; BCV72 BCV71 SCA63 115002/00/03/pp8 BCV71 BCV72 BP317 2741 dc

    PBSS4350D

    Abstract: PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP BISS transistor Product specification Supersedes data of 2000 Mar 08 2001 Jan 26 Philips Semiconductors Product specification PNP BISS transistor PBSS5350D PINNING FEATURES • High current capabilities


    Original     		PDF M3D302 PBSS5350D 613514/02/pp8 PBSS4350D PBSS5350D

    Philips MARKING CODE

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN BISS transistor Product specification Supersedes data of 2000 Mar 08 2001 Jan 26 Philips Semiconductors Product specification NPN BISS transistor PBSS4350D PINNING FEATURES • High current capabilities


    Original     		PDF M3D302 PBSS4350D 613514/02/pp8 Philips MARKING CODE PBSS4350D PBSS5350D

    transistor marking zg

    Abstract: PBSS4320T PBSS5320T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES


    Original     		PDF PBSS4320T SCA76 R75/02/pp10 transistor marking zg PBSS4320T PBSS5320T

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT ook, halfpage M3D088 BCV71; BCV72 NPN general purpose transistors Product data sheet Supersedes data of 1997 Mar 11 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BCV71; BCV72 PINNING FEATURES


    Original     		PDF M3D088 BCV71; BCV72 BCV71 115002/00/03/pp6

    mar-08 transistor

    Abstract: BLF2022-125
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Preliminary Specification 2002 Mar 08 Philips Semiconductors Preliminary Specification UHF power LDMOS transistor BLF2022-125 PINNING FEATURES • 100 % tested under single carrier 3GPP W-CDMA


    Original     		PDF M3D792 BLF2022-125 OT634 SCA73 125104/00/04/pp7 mar-08 transistor BLF2022-125

    BCV71

    Abstract: BCV72
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCV71; BCV72 NPN general purpose transistors Product data sheet Supersedes data of 1997 Mar 11 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BCV71; BCV72 FEATURES PINNING


    Original     		PDF M3D088 BCV71; BCV72 BCV71 115002/00/03/pp6 BCV71 BCV72

    philips 1n4148 SMD

    Abstract: iLCC footprint AGC-8 bux86 LN 358 MPSA42 SMD telephone line interface circuit CTR21 SSOP24 UBA1706
    Text: INTEGRATED CIRCUITS DATA SHEET UBA1706 Cordless telephone line interface Objective specification Supersedes data of 1999 Mar 08 File under Integrated Circuits, IC17 1999 Jun 04 Philips Semiconductors Objective specification Cordless telephone line interface


    Original     		PDF UBA1706 CTR21) UBA1706 465008/02/pp28 philips 1n4148 SMD iLCC footprint AGC-8 bux86 LN 358 MPSA42 SMD telephone line interface circuit CTR21 SSOP24

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1997 Mar 12 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D087 BCP69 OT223 BCP68. MAM288 OT223) SCA63 115002/00/03/pp8 BCP68 BCP69 BCP69-16 BCP69-25 BP317

    PBSS4320T

    Abstract: PBSS5320T transistor marking zg
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and


    Original     		PDF PBSS4320T R75/02/pp10 PBSS4320T PBSS5320T transistor marking zg

    SAF7113H

    Abstract: SMD A7H LCR24 QFP44 WST-625 scl 1527 encoder THERMAL Fuse l20 tf 115 c Bar code reader fine line sensor
    Text: INTEGRATED CIRCUITS DATA SHEET SAF7113H 9-bit video input processor Product specification Supersedes data of 2000 May 08 2004 Mar 22 Philips Semiconductors Product specification 9-bit video input processor SAF7113H CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION


    Original     		PDF SAF7113H SCA76 R21/02/pp81 SAF7113H SMD A7H LCR24 QFP44 WST-625 scl 1527 encoder THERMAL Fuse l20 tf 115 c Bar code reader fine line sensor

    CF001-01

    Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
    Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon


    Original     		PDF CF001-01 15-Mar-08 CF001-01 CF001-01-000X CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET

    Untitled

    Abstract: No abstract text available
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 18-Mar-08 X1001-BD MIL-STD-883 deviceX1001-BD-000W XX1001-BD-EV1 XX1001

    Untitled

    Abstract: No abstract text available
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1072-BD 08-Mar-09 MIL-STD-883 XP1072-BD-EV1 XP1072-BD

    JESD22-A114

    Abstract: JESD22-A115 JESD78 PCA9545 PCA9545D PCA9545PW SO20
    Text: INTEGRATED CIRCUITS PCA9545 4-channel I2C switch with interrupt logic and reset Product data Supersedes data of 2001 Nov 08 Philips Semiconductors 2002 Mar 28 Philips Semiconductors Product data 4-channel I2C switch with interrupt logic and reset PCA9545 passed by the PCA9545. This allows the use of different bus


    Original     		PDF PCA9545 PCA9545. JESD22-A114 JESD22-A115 JESD78 PCA9545 PCA9545D PCA9545PW SO20

    XR1011-QH

    Abstract: No abstract text available
    Text: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has


    Original     		PDF 31-Mar-08 R1011-QH XR1011-QH

    Untitled

    Abstract: No abstract text available
    Text: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has


    Original     		PDF 31-Mar-08 R1011-QH XR1011-QH

    transistor tc144e

    Abstract: tc144e tc144e transistor the same no PDTA144 PDTA144ES PDTA144EE PDTA144E PDTC144ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC144E series NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Apr 14 2004 Mar 23 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC144E SCA76 R75/07/pp14 transistor tc144e tc144e tc144e transistor the same no PDTA144 PDTA144ES PDTA144EE PDTA144E PDTC144ET

    81 210 PH 93

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 11 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCV71 ; BCV72 FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		PDF BCV71 BCV72 BCV71 MAM255 115002/00/03/pp8 81 210 PH 93

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BCP69


    OCR Scan     		PDF BCP69 OT223 BCP68. MAM288 OT223) 115002/00/03/pp8

    DEVICE MARKING CODE 150A

    Abstract: PBSS4350D PBSS5350D
    Text: Philips Semiconductors Product specification PNP transistor PBSS5350D FEATURES PINNING • High current capabilities • LOW PIN VcEsat- DESCRIPTION 1 collector 2 collector APPLICATIONS 3 base • H eavy duty battery pow ered equipm ent Autom otive, T elecom and A udio/V ideo such as m otor and lamp


    OCR Scan     		PDF SC-74 PBSS4350D. PBSS5350D PBSS5350D OT457) OT457 SC-74 DEVICE MARKING CODE 150A PBSS4350D