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    MAR 208 TRANSISTOR Search Results

    MAR 208 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MAR 208 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5225

    Abstract: DSA003642
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.


    Original     		2SC5225 ADE-208-393A 2SC5225 DSA003642 PDF

    2SC5137

    Abstract: DSA003641
    Text: 2SC5137 Silicon NPN Epitaxial ADE-208-224A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline


    Original     		2SC5137 ADE-208-224A 2SC5137 DSA003641 PDF

    2SC4926

    Abstract: 2SC5050 DSA003638
    Text: 2SC5050 Silicon NPN Epitaxial ADE-208-1130A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		2SC5050 ADE-208-1130A 2SC4926 2SC5050 DSA003638 PDF

    2SC4988

    Abstract: 847S DSA003635
    Text: 2SC4988 Silicon NPN Epitaxial ADE-208-004A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline


    Original     		2SC4988 ADE-208-004A 2SC4988 847S DSA003635 PDF

    zo 607

    Abstract: ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995
    Text: 2SC4995 Silicon NPN Epitaxial ADE-208-013A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		2SC4995 ADE-208-013A zo 607 ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995 PDF

    TRANSISTOR marking 489 code

    Abstract: pc 817 2SC5218 DSA003641
    Text: 2SC5218 Silicon NPN Epitaxial ADE-208-279A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline


    Original     		2SC5218 ADE-208-279A TRANSISTOR marking 489 code pc 817 2SC5218 DSA003641 PDF

    2SC4926

    Abstract: 2SC5051 Hitachi transistor DSA003638
    Text: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		2SC5051 ADE-208-1131A 2SC4926 2SC5051 Hitachi transistor DSA003638 PDF

    Hitachi DSA0076

    Abstract: 2SC5141
    Text: 2SC5141 Silicon NPN Epitaxial ADE-208-228A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline


    Original     		2SC5141 ADE-208-228A Hitachi DSA0076 2SC5141 PDF

    transistor zo 607

    Abstract: ZO 607 MA zo 607 zo 103 ma zo 103 ma 75 607 zo 607 p 408 2SC5080 DSA003638
    Text: 2SC5080 Silicon NPN Epitaxial ADE-208-1132A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		2SC5080 ADE-208-1132A transistor zo 607 ZO 607 MA zo 607 zo 103 ma zo 103 ma 75 607 zo 607 p 408 2SC5080 DSA003638 PDF

    2SC5080

    Abstract: 2SC5081 DSA003638
    Text: 2SC5081 Silicon NPN Epitaxial ADE-208-1133A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		2SC5081 ADE-208-1133A 2SC5080 2SC5081 DSA003638 PDF

    2SC4784

    Abstract: 2SC5049 DSA003638
    Text: 2SC5049 Silicon NPN Epitaxial ADE-208-1129A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline


    Original     		2SC5049 ADE-208-1129A 2SC4784 2SC5049 DSA003638 PDF

    2SC5139

    Abstract: DSA003641
    Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline


    Original     		2SC5139 ADE-208-226A 2SC5139 DSA003641 PDF

    Hitachi DSA0076

    Abstract: 2SC5138
    Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK


    Original     		2SC5138 ADE-208-225A Hitachi DSA0076 2SC5138 PDF

    Hitachi DSA002783

    Abstract: No abstract text available
    Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original     		3SK321 ADE-208-711B OT-143 D-85622 Hitachi DSA002783 PDF

    Hitachi DSA0076

    Abstract: 2SC5140
    Text: 2SC5140 Silicon NPN Epitaxial ADE-208-227A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK


    Original     		2SC5140 ADE-208-227A Hitachi DSA0076 2SC5140 PDF

    2SK2685

    Abstract: DSA003642
    Text: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		2SK2685 ADE-208-400A 2SK2685 DSA003642 PDF

    3sk298

    Abstract: DSA003642
    Text: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source


    Original     		3SK298 ADE-208-390A 3sk298 DSA003642 PDF

    3SK296

    Abstract: DSA003641
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		3SK296 ADE-208-388A 3SK296 DSA003641 PDF

    3SK295

    Abstract: DSA003641
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		3SK295 ADE-208-387A 3SK295 DSA003641 PDF

    3SK297

    Abstract: DSA003642
    Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source


    Original     		3SK297 ADE-208-389A 3SK297 DSA003642 PDF

    2n uhf fet

    Abstract: Hitachi DSA002730 3sk322
    Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712B Z 3rd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original     		3SK322 ADE-208-712B OT-143 D-85622 2n uhf fet Hitachi DSA002730 3sk322 PDF

    301 marking code PNP transistor

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		M3D302 PBSS5350D 603506/01/pp8 301 marking code PNP transistor PBSS4350D PBSS5350D PDF

    PBSS4350D

    Abstract: PBSS5350D MCD920
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		M3D302 PBSS4350D 603506/01/pp8 PBSS4350D PBSS5350D MCD920 PDF

    MRC039

    Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain


    Original     		M3D173 BFQ67T OT416 SC-75) MBK090 603508/02/pp12 MRC039 ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2 PDF