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    MAR 208 TRANSISTOR Search Results

    MAR 208 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MAR 208 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5225

    Abstract: DSA003642
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.


    Original     		PDF 2SC5225 ADE-208-393A 2SC5225 DSA003642

    2SC5137

    Abstract: DSA003641
    Text: 2SC5137 Silicon NPN Epitaxial ADE-208-224A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline


    Original     		PDF 2SC5137 ADE-208-224A 2SC5137 DSA003641

    2SC4926

    Abstract: 2SC5050 DSA003638
    Text: 2SC5050 Silicon NPN Epitaxial ADE-208-1130A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5050 ADE-208-1130A 2SC4926 2SC5050 DSA003638

    2SC4988

    Abstract: 847S DSA003635
    Text: 2SC4988 Silicon NPN Epitaxial ADE-208-004A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC4988 ADE-208-004A 2SC4988 847S DSA003635

    zo 607

    Abstract: ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995
    Text: 2SC4995 Silicon NPN Epitaxial ADE-208-013A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC4995 ADE-208-013A zo 607 ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995

    TRANSISTOR marking 489 code

    Abstract: pc 817 2SC5218 DSA003641
    Text: 2SC5218 Silicon NPN Epitaxial ADE-208-279A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline


    Original     		PDF 2SC5218 ADE-208-279A TRANSISTOR marking 489 code pc 817 2SC5218 DSA003641

    2SC4926

    Abstract: 2SC5051 Hitachi transistor DSA003638
    Text: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5051 ADE-208-1131A 2SC4926 2SC5051 Hitachi transistor DSA003638

    Hitachi DSA0076

    Abstract: 2SC5141
    Text: 2SC5141 Silicon NPN Epitaxial ADE-208-228A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline


    Original     		PDF 2SC5141 ADE-208-228A Hitachi DSA0076 2SC5141

    transistor zo 607

    Abstract: ZO 607 MA zo 607 zo 103 ma zo 103 ma 75 607 zo 607 p 408 2SC5080 DSA003638
    Text: 2SC5080 Silicon NPN Epitaxial ADE-208-1132A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5080 ADE-208-1132A transistor zo 607 ZO 607 MA zo 607 zo 103 ma zo 103 ma 75 607 zo 607 p 408 2SC5080 DSA003638

    2SC5080

    Abstract: 2SC5081 DSA003638
    Text: 2SC5081 Silicon NPN Epitaxial ADE-208-1133A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5081 ADE-208-1133A 2SC5080 2SC5081 DSA003638

    2SC4784

    Abstract: 2SC5049 DSA003638
    Text: 2SC5049 Silicon NPN Epitaxial ADE-208-1129A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline


    Original     		PDF 2SC5049 ADE-208-1129A 2SC4784 2SC5049 DSA003638

    2SC5139

    Abstract: DSA003641
    Text: 2SC5139 Silicon NPN Epitaxial ADE-208-226A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline


    Original     		PDF 2SC5139 ADE-208-226A 2SC5139 DSA003641

    Hitachi DSA0076

    Abstract: 2SC5138
    Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK


    Original     		PDF 2SC5138 ADE-208-225A Hitachi DSA0076 2SC5138

    Hitachi DSA002783

    Abstract: No abstract text available
    Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original     		PDF 3SK321 ADE-208-711B OT-143 D-85622 Hitachi DSA002783

    Hitachi DSA0076

    Abstract: 2SC5140
    Text: 2SC5140 Silicon NPN Epitaxial ADE-208-227A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK


    Original     		PDF 2SC5140 ADE-208-227A Hitachi DSA0076 2SC5140

    2SK2685

    Abstract: DSA003642
    Text: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		PDF 2SK2685 ADE-208-400A 2SK2685 DSA003642

    3sk298

    Abstract: DSA003642
    Text: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source


    Original     		PDF 3SK298 ADE-208-390A 3sk298 DSA003642

    3SK296

    Abstract: DSA003641
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		PDF 3SK296 ADE-208-388A 3SK296 DSA003641

    3SK295

    Abstract: DSA003641
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		PDF 3SK295 ADE-208-387A 3SK295 DSA003641

    3SK297

    Abstract: DSA003642
    Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source


    Original     		PDF 3SK297 ADE-208-389A 3SK297 DSA003642

    2n uhf fet

    Abstract: Hitachi DSA002730 3sk322
    Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712B Z 3rd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original     		PDF 3SK322 ADE-208-712B OT-143 D-85622 2n uhf fet Hitachi DSA002730 3sk322

    301 marking code PNP transistor

    Abstract: PBSS4350D PBSS5350D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS5350D 603506/01/pp8 301 marking code PNP transistor PBSS4350D PBSS5350D

    PBSS4350D

    Abstract: PBSS5350D MCD920
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.


    Original     		PDF M3D302 PBSS4350D 603506/01/pp8 PBSS4350D PBSS5350D MCD920

    MRC039

    Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain


    Original     		PDF M3D173 BFQ67T OT416 SC-75) MBK090 603508/02/pp12 MRC039 ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2