GMR sensor
Abstract: eberle GMR B6 datenbuch GMR B6 application hallsensor Magnetische weich sensor datasheet Q62705-K5003 magneto resistor
Text: Giant Magneto Resistors Applikationsschrift Giant Magneto Resistors INHALT 1 EINFÜHRUNG . 3 2 GRUNDLAGEN . 4
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B143-H6802-G2-X-7600)
B143-H7098-G1-X-7600)
B143-H7261-X-X-7600)
D-90713
GMR sensor
eberle
GMR B6
datenbuch
GMR B6 application
hallsensor
Magnetische
weich sensor datasheet
Q62705-K5003
magneto resistor
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so2 sensor datasheet
Abstract: Contactless Sensor chip mr sensor ezmpl ezmpl gas sensor no2 Thermal Cutoffs magneto
Text: Chip Magneto Resistors Chip Magneto Resistors Type: EZMPL Type M Chip Magneto Resistor changes its resistance Value in accordance with the change of intensity of the surrounding magnetic field. This type, EZMPL is suitable as a reliable contactless sensor for detecting the number of rotations, rotation
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chip mr sensor ezmpl
Abstract: so2 sensor datasheet ezmpl gas sensor no2 EZMP
Text: Chip Magneto Resistors Chip Magneto Resistors Type: EZMPL Type M Chip Magneto Resistors change their resistance value in accordance with changes in intensity of the surrounding magnetic field. This type, EZMPL is a reliable contactless sensor for detecting the number of rotations, rotation angle and
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magnetic flow meter circuit diagram
Abstract: Angle Sensor Magneto Resistors magnetic flow meter ezmpl15h ezmpl Contactless Sensor magnetic high flow meter
Text: Chip Magneto Resistors Chip Magneto Resistors Type: EZMPL Type M Chip Magneto Resistor changes its resistance Value in accordance with the change of intensity of the surrounding magnetic field. This type, EZMPL is suitable as a reliable contactless sensor for detecting the number of rotations, rotation
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EZMPL15H)
magnetic flow meter circuit diagram
Angle Sensor Magneto Resistors
magnetic flow meter
ezmpl15h
ezmpl
Contactless Sensor
magnetic high flow meter
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Q65110-L80F
Abstract: Q65410-L80E
Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
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magneto resistor
Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
Text: Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage
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Q65425-L90
Q65425-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
magneto resistor
Q65425-L90
R01-3
Q65425-L0090E001
magneto
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Q65110-L80F
Abstract: Q65410-L80E TESLA 1
Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Version 2.0 Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
TESLA 1
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PNI-11096
Abstract: CA 566 SEN-S65 566 pin diagram PNI11096 inductive sensor oscillator circuit Magnetic ink pni 11096 rb5v 3D magnetometer
Text: Revised August 2006 SEN-S65 Magneto-Inductive Sensor General Description PNI Corporation’s Magneto-Inductive MI sensors are based on patented technology that delivers breakthrough, cost-effective magnetic field sensing performance. These sensors change inductance
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SEN-S65
SEN-S65
J-STD-020)
PNI-11096
CA 566
566 pin diagram
PNI11096
inductive sensor oscillator circuit
Magnetic ink
pni 11096
rb5v
3D magnetometer
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Q65420-L90
Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
Text: Double Differential Magneto Resistor FP 420 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage
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Q65420-L90
Q65420-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65420-L90
Q65420-L0090E001
r046
q65420l90
magneto
R023
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incremental encoders siemens
Abstract: absolute encoders siemens Hall sensors Siemens hall sensor sot-143 siemens automotive gmr siemens gmr s4 siemens 230 92 siemens Hall sensors linear 2000 SMD Hall sensors linear D siemens gmr
Text: Magnetic Sensors fin eo n. co m GaAs Hall Sensors Magneto Resistors Giant Magneto Resistive Sensors ht tp :// w w w. in Product Information 05.99 Linear GaAs Hall Sensors Applications Features ț ț ț ț ț ț ț ț ț Position sensors Distance measurement
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B143-H7098-G2-X-7600
incremental encoders siemens
absolute encoders siemens
Hall sensors Siemens
hall sensor sot-143
siemens automotive gmr
siemens gmr s4
siemens 230 92
siemens Hall sensors linear 2000
SMD Hall sensors linear D
siemens gmr
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PNI sen-l
Abstract: No abstract text available
Text: Updated August, 2006 PNI SEN-L Leaded Magneto-Inductive Sensor General Description Features PNI Corporation’s Magneto-Inductive MI sensors are based on patented technology that delivers breakthrough, cost-effective magnetic field sensing performance. These sensors change
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FLUXGATE
Abstract: inductive sensor IC Fluxgate Magnetic Field Sensor 74HC4066 application note 74HC4066 Magnetic inductive Sensor datasheet magnetic sensor circuit diagram Magnetic inductive Sensor inductive sensor oscillator circuit compass Sensor circuit
Text: 1000083 R02 – Revised 15Dec03 Application Note: Discrete Circuit for Magneto-Inductive Sensors Introduction PNI Corporation’s Magneto-Inductive MI sensors are based on patented technology that delivers breakthrough, cost-effective magnetic field sensing performance. These sensors change inductance with
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15Dec03
TLC3702I,
74AC08
74HC4066
TLC3702I
FLUXGATE
inductive sensor IC
Fluxgate Magnetic Field Sensor
74HC4066 application note
74HC4066
Magnetic inductive Sensor datasheet
magnetic sensor circuit diagram
Magnetic inductive Sensor
inductive sensor oscillator circuit
compass Sensor circuit
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48TQFP
Abstract: PCA3000 PCA3004TPB PCA3006TPA PCA3006TPB 546126
Text: PCA3000 AUGUST 1994 TARGET INFORMATION DS3829 -1.5 PCA3000 5V 6 CHANNEL MAGNETO-RESISTIVE READ/ THIN FILM WRITE PRE-AMPLIFIER The GEC Plessey Semiconductors PCA3000 is a bipolar monolithic integrated circuit designed for use with a combined magneto-resistive read head and thin film write
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PCA3000
DS3829
PCA3000
225mV
20V/V
60MHz
48TQFP
PCA3004TPB
PCA3006TPA
PCA3006TPB
546126
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GMR sensor
Abstract: angle position sensors Angle Sensor AED02957 Q62705-K5005
Text: Giant Magneto Resistive Position Sensor GMR C6 Version 1.0 Preliminary This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. 2.9 ±0.1 2˚ . 30˚ 1.9 1.1 max
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GMR B6
Abstract: GMR sensor B6 MARKING Q62705-K5004 Angle Sensor Magneto Resistors GMR B6 application
Text: Giant Magneto Resistive Position Sensor GMR B6 Version 1.0 Data Sheet This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. 2.9 ±0.1 1.1 max 0.6 +0.1 -0.05
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Untitled
Abstract: No abstract text available
Text: OIM4C OIM4C Magnetic linear position sensor _ General Description OIM4C is a magneto resistive position sensor, based on the Anisotropic Magneto Resistance AMR effect in a plastic FR4 package with glob top hard black resin. When the device is moved along a magnetic scale with a
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030mm
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we381
Abstract: magneto resistor
Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
flE35b05
013437b
we381
magneto resistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by
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Untitled
Abstract: No abstract text available
Text: Infineon technologies FP 420 L 90 B Double Differential Magneto Resistor Version 2.0 Incl. lacquer-cover 1.6 pin connection Approx. weight 0.2 g D im ensions in mm Features Typical Applications Double differential magneto resistor on one carrier Accurate intercenter spacing
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a235bD5
flE35fc
013437b
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WCP01
Abstract: VM6110
Text: VM6110 <0L~4 VTC Inc. Value the Customer 4-CHANNEL, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES DESCRIPTION The VM 6110 is a high-performance read/write preamplifier designed for use with four-terminal magneto-resistive record
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VM6110
40mAp-p,
550nH,
WCP01
VM6110
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incremental encoders siemens
Abstract: AFL smd Marking AFL smd code gmr sensor Angle Sensor Magneto Resistors FL005 siemens gmr magnetic field sensor siemens AFL MARKING GMR B6 application
Text: SIEMENS Giant Magneto Resistive Position Sensor B6 Preliminary Data This angle sensor is based on the Giant Magneto Besistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor in SMD package
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GPW06rcuit.
incremental encoders siemens
AFL smd Marking
AFL smd code
gmr sensor
Angle Sensor Magneto Resistors
FL005
siemens gmr
magnetic field sensor siemens
AFL MARKING
GMR B6 application
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FP30D250E
Abstract: Q65030-D magneto resistor tesla 104Gauss Q6503
Text: FP30D 250E Magneto resistor F P 3 0 D 2 5 0 E is a magneto resistor made of indium antimonide — nickel antimonide with a basic resistance /?0 of 250 fl. The " D " material produces the largest resistance variation /?B//?0 in the magnetic field. The temperature coefficient TC, however, is
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FP30D250E
FP30D250E
Q65030-D
250-E
magneto resistor
tesla
104Gauss
Q6503
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Untitled
Abstract: No abstract text available
Text: SIEMENS Giant Magneto Resistive Position Sensor B6 Preliminary Data This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • G M R sensor in SMD package
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Q65111-L100-D
Abstract: FP111L100 L100
Text: FR 111 L100 Center-tap magneto resistor The center-tap magneto resistor FP 111 L 100 is a magnetically controllable resistor made of InSb/NiSb and having a basic resistance R0 of 2 x 100Q. It is mounted on an insulated iron substrate. The " L " material is characterized by a large resistance
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FP111
Q65111-L100-D
FP111L100
Q65111-L100-D
FP111L100
L100
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